74HC_HCT08 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 4 — 6 September 2012 4 of 16
NXP Semiconductors
74HC08; 74HCT08
Quad 2-input AND gate
8. Recommended operating conditions
9. Static characteristics
Table 5. Recommended operating conditions
Voltages are referenced to GND (ground = 0 V)
Symbol Parameter Conditions 74HC08 74HCT08 Unit
Min Typ Max Min Typ Max
V
CC
supply voltage 2.0 5.0 6.0 4.5 5.0 5.5 V
V
I
input voltage 0 - V
CC
0- V
CC
V
V
O
output voltage 0 - V
CC
0- V
CC
V
T
amb
ambient temperature 40 - +125 40 - +125 C
t/V input transition rise and fall rate V
CC
= 2.0 V - - 625 - - - ns/V
V
CC
= 4.5 V - 1.67 139 - 1.67 139 ns/V
V
CC
= 6.0 V--83---ns/V
Table 6. Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions 25 C 40 C to +85 C 40 C to +125 C Unit
Min Typ Max Min Max Min Max
74HC08
V
IH
HIGH-level
input voltage
V
CC
= 2.0 V 1.5 1.2 - 1.5 - 1.5 - V
V
CC
= 4.5 V 3.15 2.4 - 3.15 - 3.15 - V
V
CC
= 6.0 V 4.2 3.2 - 4.2 - 4.2 - V
V
IL
LOW-level
input voltage
V
CC
= 2.0 V - 0.8 0.5 - 0.5 - 0.5 V
V
CC
= 4.5 V - 2.1 1.35 - 1.35 - 1.35 V
V
CC
= 6.0 V - 2.8 1.8 - 1.8 - 1.8 V
V
OH
HIGH-level
output voltage
V
I
= V
IH
or V
IL
I
O
= 20 A; V
CC
= 2.0 V 1.9 2.0 - 1.9 - 1.9 - V
I
O
= 20 A; V
CC
= 4.5 V 4.4 4.5 - 4.4 - 4.4 - V
I
O
= 20 A; V
CC
= 6.0 V 5.9 6.0 - 5.9 - 5.9 - V
I
O
= 4.0 mA; V
CC
= 4.5 V 3.98 4.32 - 3.84 - 3.7 - V
I
O
= 5.2 mA; V
CC
= 6.0 V 5.48 5.81 - 5.34 - 5.2 - V
V
OL
LOW-level
output voltage
V
I
= V
IH
or V
IL
I
O
= 20 A; V
CC
= 2.0 V - 0 0.1 - 0.1 - 0.1 V
I
O
= 20 A; V
CC
= 4.5 V - 0 0.1 - 0.1 - 0.1 V
I
O
= 20 A; V
CC
= 6.0 V - 0 0.1 - 0.1 - 0.1 V
I
O
= 4.0 mA; V
CC
= 4.5 V - 0.15 0.26 - 0.33 - 0.4 V
I
O
= 5.2 mA; V
CC
= 6.0 V - 0.16 0.26 - 0.33 - 0.4 V
I
I
input leakage
current
V
I
= V
CC
or GND;
V
CC
=6.0V
--0.1 - 1-1 A
I
CC
supply current V
I
= V
CC
or GND; I
O
=0A;
V
CC
=6.0V
--2.0- 20 - 40A
74HC_HCT08 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 4 — 6 September 2012 5 of 16
NXP Semiconductors
74HC08; 74HCT08
Quad 2-input AND gate
10. Dynamic characteristics
C
I
input
capacitance
-3.5- - - - -pF
74HCT08
V
IH
HIGH-level
input voltage
V
CC
= 4.5 V to 5.5 V 2.0 1.6 - 2.0 - 2.0 - V
V
IL
LOW-level
input voltage
V
CC
= 4.5 V to 5.5 V - 1.2 0.8 - 0.8 - 0.8 V
V
OH
HIGH-level
output voltage
V
I
= V
IH
or V
IL
; V
CC
= 4.5 V
I
O
= 20 A 4.4 4.5 - 4.4 - 4.4 - V
I
O
= 4.0 mA 3.98 4.32 - 3.84 - 3.7 - V
V
OL
LOW-level
output voltage
V
I
= V
IH
or V
IL
; V
CC
= 4.5 V
I
O
= 20 A - 0 0.1 - 0.1 - 0.1 V
I
O
= 5.2 mA - 0.15 0.26 - 0.33 - 0.4 V
I
I
input leakage
current
V
I
= V
CC
or GND;
V
CC
=5.5V
--0.1 - 1-1 A
I
CC
supply current V
I
= V
CC
or GND; I
O
=0A;
V
CC
=5.5V
--2.0- 20 - 40A
I
CC
additional
supply current
per input pin;
V
I
=V
CC
2.1 V; I
O
=0A;
other inputs at V
CC
or GND;
V
CC
= 4.5 V to 5.5 V
- 60 216 - 270 - 294 A
C
I
input
capacitance
-3.5- - - - -pF
Table 6. Static characteristics
…continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions 25 C 40 C to +85 C 40 C to +125 C Unit
Min Typ Max Min Max Min Max
Table 7. Dynamic characteristics
GND = 0 V; C
L
= 50 pF; for load circuit see Figure 7.
Symbol Parameter Conditions 25 C 40 C to +125 C Unit
Min Typ Max Max
(85 C)
Max
(125 C)
74HC08
t
pd
propagation delay nA, nB to nY; see Figure 6
[1]
V
CC
= 2.0 V - 25 90 115 135 ns
V
CC
= 4.5 V - 9 18 23 27 ns
V
CC
= 5.0 V; C
L
=15pF - 7 - - - ns
V
CC
= 6.0 V - 7 15 20 23 ns
t
t
transition time see Figure 6
[2]
V
CC
= 2.0 V - 19 75 95 110 ns
V
CC
= 4.5 V - 7 15 19 22 ns
V
CC
= 6.0 V - 6 13 16 19 ns
74HC_HCT08 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 4 — 6 September 2012 6 of 16
NXP Semiconductors
74HC08; 74HCT08
Quad 2-input AND gate
[1] t
pd
is the same as t
PHL
and t
PLH
.
[2] t
t
is the same as t
THL
and t
TLH
.
[3] C
PD
is used to determine the dynamic power dissipation (P
D
in W):
P
D
=C
PD
V
CC
2
f
i
N+ (C
L
V
CC
2
f
o
) where:
f
i
= input frequency in MHz;
f
o
= output frequency in MHz;
C
L
= output load capacitance in pF;
V
CC
= supply voltage in V;
N = number of inputs switching;
(C
L
V
CC
2
f
o
) = sum of outputs.
11. Waveforms
C
PD
power dissipation
capacitance
per package; V
I
=GNDtoV
CC
[3]
-10- - -pF
74HCT02
t
pd
propagation delay nA, nB to nY; see Figure 6
[1]
V
CC
= 4.5 V - 14 24 30 36 ns
V
CC
= 5.0 V; C
L
=15pF - 11 - - - ns
t
t
transition time V
CC
= 4.5 V; see Figure 6
[2]
- 7 15 19 22 ns
C
PD
power dissipation
capacitance
per package;
V
I
=GNDtoV
CC
1.5 V
[3]
-20- - -pF
Table 7. Dynamic characteristics
GND = 0 V; C
L
= 50 pF; for load circuit see Figure 7.
Symbol Parameter Conditions 25 C 40 C to +125 C Unit
Min Typ Max Max
(85 C)
Max
(125 C)
Measurement points are given in Table 9.
V
OL
and V
OH
are typical voltage output levels that occur with the output load.
Fig 6. Input to output propagation delays
*1'
9
2+
9
2/
Q<RXWSXW
DDD
9
,
W
3+/
W
7+/
W
7/+
W
3/+
9
<
9
0
9
0
9
;
Q$Q%LQSXW
Table 8. Measurement points
Type Input Output
V
M
V
M
V
X
V
Y
74HC08 0.5V
CC
0.5V
CC
0.1V
CC
0.9V
CC
74HCT08 1.3 V 1.3 V 0.1V
CC
0.9V
CC

74HC08N,652

Mfr. #:
Manufacturer:
NXP Semiconductors
Description:
Logic Gates QUAD 2-IN AND GATE
Lifecycle:
New from this manufacturer.
Delivery:
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