Si1403BDL
www.vishay.com
Vishay Siliconix
S10-0110-Rev. D, 18-Jan-10
2
Document Number: 73253
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics Transfer Characteristics
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Gate threshold voltage V
GS(th)
V
DS
= V
GS
, I
D
= -250 μA -0.6 - -1.3 V
Gate leakage I
GSS
V
DS
= 0 V, V
GS
= ± 12 V - - ± 100 nA
Zero gate voltage drain current I
DSS
V
DS
= -20 V, V
GS
= 0 V - - -1
μA
V
DS
= -20 V, V
GS
= 0 V, T
J
= 85 °C - - -5
On-state drain current
a
I
D(on)
V
DS
= -5 V, V
GS
= -4.5 V -2 - - A
Drain-source on-state resistance
a
R
DS(on)
V
GS
= -4.5 V, I
D
= -1.5 A - 0.120 0.150
V
GS
= -3.6 V, I
D
= -1.4 A - 0.140 0.175
V
GS
= -2.5 V, I
D
= -0.8 A - 0.220 0.265
Forward transconductance
a
g
fs
V
DS
= -10 V, I
D
= -1.5 A - 3.4 - S
Diode forward voltage
a
V
SD
I
S
= -0.8 A, V
GS
= 0 V - -0.8 -1.1 V
Dynamic
b
Total gate charge Q
g
V
DS
= -10 V, V
GS
= -4.5 V, I
D
= -1.5 A
-2.94.5
nCGate-source charge Q
gs
-0.65-
Gate-drain charge Q
gd
-1.0-
Gate resistance R
g
f = 1 MHz - 9 -
Turn-on delay time t
d(on)
V
DD
= -10 V, R
L
= 10 ,
I
D
-1 A, V
GEN
= -4.5 V, R
g
= 6
-1320
ns
Rise time t
r
-3045
Turn-off delay time t
d(off)
-2842
Fall time t
f
-1320
Source-drain reverse recovery time t
rr
I
F
= -0.8 A, dI/dt = 100 A/μs
-1225
Body diode reverse recovery charge Q
rr
-48nC
0.0
0.8
1.6
2.4
3.2
4.0
0.0 0.8 1.6 2.4 3.2 4.0
V
GS
= 5 V thru 2.5. V
2 V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
1 V, 0.5 V
1.5 V
0.0
0.8
1.6
2.4
3.2
4.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
T
C
= - 55 °C
125 °C
25 °C
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
