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IRF720PBF

P1-P3P4-P6P7-P8
IRF720, SiHF720
www.vishay.com
Vishay Siliconix
S14-2355-Rev. C, 08-Dec-14
1
Document Number: 91043
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Power MOSFET
FEATURES
• Dynamic dV/dt rating
• Repetitive avalanche rated
• Fast switching
• Ease of paralleling
• Simple drive requirements
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Note
*
This datasheet provides information about parts that are
RoHS-compliant and/or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information/tables in this datasheet for details.
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 50 V, starting T
J
= 25 °C, L = 30 mH, R
g
= 25 Ω, I
AS
= 3.3 A (see fig. 12).
c. I
SD
≤ 3.3 A, dI/dt ≤ 65 A/μs, V
DD
≤ V
DS
, T
J
≤ 150 °C.
d. 1.6 mm from case.
PRODUCT SUMMARY
V
DS
(V) 400 V
R
DS(on)
(Ω)V
GS
= 10 V 1.8
Q
g
(Max.) (nC) 20
Q
gs
(nC) 3.3
Q
gd
(nC) 11
Configuration Single
N-Channel MOSFET
G
D
S
TO-220AB
G
D
S
Available
RoHS*
COMPLIANT
ORDERING INFORMATION
Package TO-220AB
Lead (Pb)-free
IRF720PbF
SiHF720-E3
SnPb
IRF720
SiHF720
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
400 V
Gate-Source Voltage V
GS
± 20 V
Continuous Drain Current V
GS
at 10 V
T
C
= 25 °C
I
D
3.3
AT
C
= 100 °C 2.1
Pulsed Drain Current
a
I
DM
13
Linear Derating Factor 0.40 W/°C
Single Pulse Avalanche Energy
b
E
AS
190 mJ
Repetitive Avalanche Current
a
I
AR
3.3 A
Repetitive Avalanche Energy
a
E
AR
5.0 mJ
Maximum Power Dissipation T
C
= 25 °C P
D
50 W
Peak Diode Recovery dV/dt
c
dV/dt 4.0 V/ns
Operating Junction and Storage Temperature Range T
J
, T
stg
-55 to +150
°C
Soldering Recommendations (Peak Temperature)
d
for 10 s 300
Mounting Torque 6-32 or M3 screw
10 lbf · in
1.1 N · m
IRF720, SiHF720
www.vishay.com
Vishay Siliconix
S14-2355-Rev. C, 08-Dec-14
2
Document Number: 91043
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient R
thJA
-62
°C/WCase-to-Sink, Flat, Greased Surface R
thCS
0.50 -
Maximum Junction-to-Case (Drain) R
thJC
-2.5
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0 V, I
D
= 250 μA 400 - - V
V
DS
Temperature Coefficient ΔV
DS
/T
J
Reference to 25 °C, I
D
= 1 mA - 0.51 - V/°C
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA 2.0 - 4.0 V
Gate-Source Leakage I
GSS
V
GS
= ± 20 - - ± 100 nA
Zero Gate Voltage Drain Current I
DSS
V
DS
= 400 V, V
GS
= 0 V - - 25
μA
V
DS
= 320 V, V
GS
= 0 V, T
J
= 125 °C - - 250
Drain-Source On-State Resistance R
DS(on)
V
GS
= 10 V I
D
= 2.0 A
b
--1.8Ω
Forward Transconductance g
fs
V
DS
= 50 V, I
D
= 2.0 A
b
1.7 - - S
Dynamic
Input Capacitance C
iss
V
GS
= 0 V,
V
DS
= 25 V,
f = 1.0 MHz, see fig. 5
-410-
pFOutput Capacitance C
oss
-120-
Reverse Transfer Capacitance C
rss
-47-
Total Gate Charge Q
g
V
GS
= 10 V
I
D
= 3.3 A,
V
DS
= 320 V,
see fig. 6 and 13
b
--20
nC Gate-Source Charge Q
gs
--3.3
Gate-Drain Charge Q
gd
--11
Turn-On Delay Time t
d(on)
V
DD
= 200 V, I
D
= 3.3 A
R
g
= 18 Ω, R
D
= 56 Ω, see fig. 10
b
-10-
ns
Rise Time t
r
-14-
Turn-Off Delay Time t
d(off)
-30-
Fall Time t
f
-13-
Internal Drain Inductance L
D
Between lead,
6 mm (0.25") from
package and center of
die contact
-4.5-
nH
Internal Source Inductance L
S
-7.5-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
S
MOSFET symbol
showing the
integral reverse
p - n junction diode
--3.3
A
Pulsed Diode Forward Current
a
I
SM
--13
Body Diode Voltage V
SD
T
J
= 25 °C, I
S
= 3.3 A, V
GS
= 0 V
b
--1.6V
Body Diode Reverse Recovery Time t
rr
T
J
= 25 °C, I
F
= 3.3 A, dI/dt = 100 A/μs
b
- 270 600 ns
Body Diode Reverse Recovery Charge Q
rr
-1.43.0μC
Forward Turn-On Time t
on
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
D
S
G
S
D
G
IRF720, SiHF720
www.vishay.com
Vishay Siliconix
S14-2355-Rev. C, 08-Dec-14
3
Document Number: 91043
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics, T
C
= 25 °C
Fig. 2 - Typical Output Characteristics, T
C
= 150 °C
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
91043_01
20 µs Pulse Width
T
C
= 25 °C
4.5 V
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain Current (A)
10
0
10
1
10
1
10
0
10
-1
Bottom
To p
V
GS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
10
-2
10
-1
10
1
10
0
10
-1
10
0
10
1
V
DS
,
Drain-to-Source Voltage (V)
I
D
, Drain Current (A)
Bottom
To p
V
GS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
20 µs Pulse Width
T
C
= 150 °C
91043_02
4.5 V
10
-2
10
-1
0.01
0.1
1
10
45678910
I
D
, Drain-to-Source Current (A)
V
GS
, Gate-to-Source Voltage (V)
T
J
= 150 °C
T
J
= 25 °C
V
DS
= 26.2V
I
D
= 3.3 A
V
GS
= 10 V
3.0
0.0
0.5
1.0
1.5
2.0
2.5
T
J
,
Junction Temperature (°C)
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
91043_04
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
3.5
1000
800
600
400
0
200
10
0
10
1
Capacitance (pF)
V
DS
,
Drain-to-Source Voltage (V)
C
iss
C
rss
C
oss
V
GS
= 0 V, f = 1 MHz
C
iss
= C
gs
+ C
gd
, C
ds
Shorted
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
91043_05
Q
G
, Total Gate Charge (nC)
V
GS
, Gate-to-Source Voltage (V)
20
16
12
8
0
4
0
5
25
2015
10
V
DS
= 80 V
V
DS
= 200 V
For test circuit
see figure 13
V
DS
= 320 V
91043_06
I
D
= 3.3 A
P1-P3P4-P6P7-P8

IRF720PBF

Mfr. #:
Buy IRF720PBF
Manufacturer:
Vishay / Siliconix
Description:
MOSFET N-CH 400V HEXFET MOSFET
Lifecycle:
New from this manufacturer.
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