IRF720PBF

IRF720, SiHF720
www.vishay.com
Vishay Siliconix
S14-2355-Rev. C, 08-Dec-14
4
Document Number: 91043
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
10
1
10
0
V
SD
, Source-to-Drain Voltage (V)
I
SD
, Reverse Drain Current (A)
0.4
1.2
1.00.80.6
25 °C
150 °C
V
GS
= 0 V
91043_07
10
-1
1.4
10 µs
100 µs
1 ms
10 ms
Operation in this area limited
by R
DS(on)
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain Current (A)
T
C
= 25 °C
T
J
= 150 °C
Single Pulse
10
-2
10
2
0.1
2
5
0.1
2
5
1
2
5
10
2
5
25
1
25
10
25
10
2
25
10
3
91043_08
I
D
, Drain Current (A)
T
C
, Case Temperature (°C)
1.0
1.5
2.0
2.5
3.0
3.5
25 1501251007550
91043_09
0.0
0.5
Pulse width 1 µs
Duty factor 0.1 %
R
D
V
GS
R
G
D.U.T.
10 V
+
-
V
DS
V
DD
V
DS
90 %
10 %
V
GS
t
d(on)
t
r
t
d(off)
t
f
10
1
0.1
10
-2
10
-5
10
-4
10
-3
10
-2
0.1 1 10
P
DM
t
1
t
2
t
1
, Rectangular Pulse Duration (s)
Thermal Response (Z
thJC
)
Notes:
1. Duty Factor, D = t
1
/t
2
2. Peak T
j
= P
DM
x Z
thJC
+ T
C
Single Pulse
(Thermal Response)
0 0.5
0.2
0.1
0.05
0.02
0.01
91043_11
IRF720, SiHF720
www.vishay.com
Vishay Siliconix
S14-2355-Rev. C, 08-Dec-14
5
Document Number: 91043
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Fig. 13a - Basic Gate Charge Waveform
Fig. 13b - Gate Charge Test Circuit
I
AS
V
DS
V
DD
V
DS
t
p
500
0
100
200
300
400
25 150
125
10075
50
Starting T
J
, Junction Temperature (°C)
E
AS
, Single Pulse Energy (mJ)
Bottom
To p
I
D
1.5 A
2.1 A
3.3 A
V
DD
= 50 V
91043_12c
Q
GS
Q
GD
Q
G
V
G
Charge
V
GS
D.U.T.
3 mA
V
GS
V
DS
I
G
I
D
0.3 µF
0.2 µF
50 kΩ
12 V
Current regulator
Current sampling resistors
Same type as D.U.T.
+
-
IRF720, SiHF720
www.vishay.com
Vishay Siliconix
S14-2355-Rev. C, 08-Dec-14
6
Document Number: 91043
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91043
.
P.W.
Period
dI/dt
Diode recovery
dV/dt
Ripple 5 %
Body diode forward drop
Re-applied
voltage
Reverse
recovery
current
Body diode forward
current
V
GS
= 10 V
a
I
SD
Driver gate drive
D.U.T. l
SD
waveform
D.U.T. V
DS
waveform
Inductor current
D =
P.W.
Period
+
-
+
+
+
-
-
-
Peak Diode Recovery dV/dt Test Circuit
V
DD
dV/dt controlled by R
g
Driver same type as D.U.T.
I
SD
controlled by duty factor “D”
D.U.T. - device under test
D.U.T.
Circuit layout considerations
Low stray inductance
Ground plane
Low leakage inductance
current transformer
R
g
Note
a. V
GS
= 5 V for logic level devices
V
DD

IRF720PBF

Mfr. #:
Manufacturer:
Vishay / Siliconix
Description:
MOSFET N-CH 400V HEXFET MOSFET
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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