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BSP179H6327XTSA1

P1-P3P4-P6P7-P8
BSP179
1 Power dissipation 2 Drain current
P
tot)
=f(T
A
) I
D
=f(T
A
); V
GS
≥10 V
3 Safe operating area 4 Max. transient thermal impedance
I
D
=f(V
DS
); T
A
=25 °C; D=0 Z
thJA
=f(t
p
)
parameter: t
p
parameter: D =t
p
/T
10 µs
100 µs
1 ms
10 ms
DC
10
0
10
1
10
2
10
3
10
-3
10
-2
10
-1
10
0
10
1
I
D
[A]
V
DS
[V]
limited by on-state
resistance
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
0
10
1
10
2
Z
thJA
[K/W]
t
p
[s]
0
0,5
1
1,5
2
0 40 80 120 160
P
tot
[W]
T
A
[°C]
0
0,05
0,1
0,15
0,2
0,25
0 40 80 120 160
I
D
[A]
T
A
[°C]
Rev. 2.0 page 4 2015-06-23
BSP179
5 Typ. output characteristics 6 Typ. drain-source on resistance
I
D
=f(V
DS
); T
j
=25 °C R
DS(on)
=f(I
D
); T
j
=25 °C
parameter: V
GS
parameter: V
GS
7 Typ. transfer characteristics 8 Typ. forward transconductance
I
D
=f(V
GS
); |V
DS
|>2|I
D
|R
DS(on)max
g
fs
=f(I
D
); T
j
=25 °C
-0.2 V
-0.1 V
0 V
0.1 V
0.2 V
0.5 V
1 V
10 V
0
10
20
30
40
0 0,05 0,1 0,15 0,2 0,25
R
DS(on)
[W]
I
D
[A]
0
0,05
0,1
0,15
0,2
0,25
-2 -1 0 1
I
D
[A]
V
GS
[V]
0
0,05
0,1
0,15
0,2
0,00 0,04 0,08 0,12
g
fs
[S]
I
D
[A]
-0.2 V
-0.1 V
0 V
0.1 V
0.2 V
0.5 V
1 V
10 V
0
0,1
0,2
0,3
0 2 4 6 8 10
I
D
[A]
V
DS
[V]
Rev. 2.0 page 5 2015-06-23
BSP179
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
R
DS(on)
=f(T
j
); I
D
=0.01 A; V
GS
=0 V V
GS(th)
=f(T
j
); V
DS
=3 V; I
D
=94 µA
parameter: I
D
11 Threshold voltage bands 12 Typ. capacitances
I
D
=f(V
GS
); V
DS
=3 V; T
j
=25 °C C =f(V
DS
); V
GS
=-3 V; f=1 MHz
94 µA
J K L M N
0,01
0,1
1
10
-2 -1,5 -1 -0,5
I
D
[mA]
V
GS
[V]
typ
98 %
0
10
20
30
40
50
60
-60 -20 20 60 100 140
R
DS(on)
[W]
T
j
[°C]
typ
98 %
2 %
-3
-2,5
-2
-1,5
-1
-0,5
0
-60 -20 20 60 100 140
V
GS(th)
[V]
T
j
[°C]
Ciss
Coss
Crss
10
0
10
1
10
2
10
3
0 10 20 30
C [pF]
V
DS
[V]
Rev. 2.0 page 6 2015-06-23
P1-P3P4-P6P7-P8

BSP179H6327XTSA1

Mfr. #:
Buy BSP179H6327XTSA1
Manufacturer:
Infineon Technologies
Description:
MOSFET SMALL SIGNAL+P-CH
Lifecycle:
New from this manufacturer.
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