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BSP179H6327XTSA1

P1-P3P4-P6P7-P8
BSP179
13 Forward characteristics of reverse diode 15 Typ. gate charge
I
F
=f(V
SD
) V
GS
=f(Q
gate
); I
D
=0.21 A pulsed
parameter: T
j
parameter: V
DD
16 Drain-source breakdown voltage
V
BR(DSS)
=f(T
j
); I
D
=250 µA
300
340
380
420
460
500
-60 -20 20 60 100 140
V
BR(DSS)
[V]
T
j
[°C]
0.2 VDS(max)
0.5 VDS(max)
0.8 VDS(max)
-3
-2
-1
0
1
2
3
4
5
0 0,4 0,8 1,2 1,6 2 2,4 2,8 3,2 3,6 4
V
GS
[V]
Q
gate
[nC]
25°C
150°C
25 °C, 98%
25°C 98%
150°C 98%
0,01
0,1
1
0 0,5 1 1,5 2
I
F
[A]
V
SD
[V]
Rev. 2.0 page 7 2015-06-23
BSP179
Package Outline:
9.18
13.14
24.96
102.48
Footprint: Packaging:
V
DS
=3 V, I
D
=94 µA
167
584
Dimensions in mm
Rev. 2.0 page 8 2015-06-23
P1-P3P4-P6P7-P8

BSP179H6327XTSA1

Mfr. #:
Buy BSP179H6327XTSA1
Manufacturer:
Infineon Technologies
Description:
MOSFET SMALL SIGNAL+P-CH
Lifecycle:
New from this manufacturer.
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