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VS-CPV363M4UPBF

P1-P3P4-P6P7-P9P10-P10
VS-CPV363M4UPbF
www.vishay.com
Vishay Semiconductors
Revision: 25-Oct-17
1
Document Number: 94486
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IGBT SIP Module
(Ultrafast IGBT)
FEATURES
• Fully isolated printed circuit board mount
package
• Switching-loss rating includes all “tail” losses
•HEXFRED
®
soft ultrafast diodes
• Optimized for medium speed, see fig. 1 for current vs.
frequency curve
• UL approved file E78996
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The IGBT technology is the key to Vishay’s Semiconductors
advanced line of IMS (Insulated Metal Substrate) power
modules. These modules are more efficient than
comparable bipolar transistor modules, while at the same
time having the simpler gate-drive requirements of the
familiar power MOSFET. This superior technology has now
been coupled to a state of the art materials system that
maximizes power throughput with low thermal resistance.
This package is highly suited to motor drive applications and
where space is at a premium.
Notes
(1)
Repetitive rating; V
GE
= 20 V, pulse width limited by maximum junction temperature (see fig. 20)
(2)
V
CC
= 80 % (V
CES
), V
GE
= 20 V, L = 10 μH, R
G
= 23 (see fig. 19)
PRIMARY CHARACTERISTICS
OUTPUT CURRENT IN A TYPICAL 20 kHz MOTOR DRIVE
V
CES
600 V
I
RMS
per phase (2.1 kW total)
with T
C
= 90 °C
7.1 A
RMS
T
J
125 °C
Supply voltage 360 V
DC
Power factor 0.8
Modulation depth (see fig. 1) 115 %
V
CE(on)
(typical)
at I
C
= 6.8 A, 25 °C
1.7 V
Speed 8 kHz to 30 kHz
Package SIP
Circuit configuration Three phase inverter
IMS-2
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Collector to emitter voltage V
CES
600 V
Continuous collector current, each IGBT I
C
T
C
= 25 °C 13
A
T
C
= 100 °C 6.8
Pulsed collector current I
CM
(1)
40
Clamped inductive load current I
LM
(2)
40
Diode continuous forward current I
F
T
C
= 100 °C 6.1
Diode maximum forward current I
FM
40
Gate to emitter voltage V
GE
± 20 V
Isolation voltage V
ISOL
Any terminal to case, t = 1 min 2500 V
RMS
Maximum power dissipation, each IGBT P
D
T
C
= 25 °C 36
W
T
C
= 100 °C 14
Operating junction and storage temperature range T
J
, T
Stg
-40 to +150
°C
Soldering temperature For 10 s, (0.063" (1.6 mm) from case) 300
Mounting torque 6-32 or M3 screw
5 to 7
(0.55 to 0.8)
lbf in
(N m)
VS-CPV363M4UPbF
www.vishay.com
Vishay Semiconductors
Revision: 25-Oct-17
2
Document Number: 94486
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Pulse width 80 μs, duty factor 0.1 %
(2)
Pulse width 5.0 μs; single shot
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TYP. MAX. UNITS
Junction-to-case, each IGBT, one IGBT in conduction R
thJC
(IGBT) - 3.5
°C/WJunction-to-case, each diode, one diode in conduction R
thJC
(DIODE) - 5.5
Case to sink, flat, greased surface R
thCS
(MODULE) 0.10 -
Weight of module
20 - g
0.7 - oz.
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown voltage V
(BR)CES
(1)
V
GE
= 0 V, I
C
= 250 μA 600 - - V
Temperature coeff. of breakdown
voltage
V
(BR)CES
T
J
V
GE
= 0 V, I
C
= 1.0 mA - 0.63 - V/°C
Collector to emitter saturation voltage V
CE(on)
I
C
= 6.8 A
V
GE
= 15 V
See fig. 2, 5
- 1.70 2.2
V
I
C
= 13 A - 2.00 -
I
C
= 6.8 A, T
J
= 150 °C - 1.70 -
Gate threshold voltage V
GE(th)
V
CE
= V
GE
, I
C
= 250 μA
3.0 - 6.0
Temperature coeff. of threshold voltage V
GE(th)
/T
J
-- 11-mV/°C
Forward transconductance g
fe
(2)
V
CE
= 100 V, I
C
= 6.8 A 4.0 6.0 - S
Zero gate voltage collector current I
CES
V
GE
= 0 V, V
CE
= 600 V - - 250
μA
V
GE
= 0 V, V
CE
= 600 V, T
J
= 150 °C - - 2500
Diode forward voltage drop V
FM
I
C
= 12 A
See fig. 13
-1.41.7
V
I
C
= 12 A, T
J
= 150 °C - 1.3 1.6
Gate to emitter leakage current I
GES
V
GE
= ± 20 V - - ± 100 nA
SWITCHING CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Total gate charge (turn-on) Q
g
I
C
= 6.8 A
V
CC
= 400 V
See fig. 8
-5379
nCGate to emitter charge (turn-on) Q
ge
-7.712
Gate to collector charge (turn-on) Q
gc
-2131
Turn-on delay time t
d(on)
T
J
= 25 °C
I
C
= 6.8 A, V
CC
= 480 V
V
GE
= 15 V, R
G
= 23
Energy losses include “tail” and diode
reverse recovery.
See fig. 9, 10, 11, 18
-43-
ns
Rise time t
r
-14-
Turn-off delay time t
d(off)
- 95 140
Fall time t
f
- 83 190
Turn-on switching loss E
on
-0.17-
mJTurn-off switching loss E
off
-0.15-
Total switching loss E
ts
- 0.32 0.45
Turn-on delay time t
d(on)
T
J
= 150 °C
I
C
= 6.8 A, V
CC
= 480 V
V
GE
= 15 V, R
G
= 23
Energy losses include “tail” and
diode reverse recovery
See fig. 9, 10, 11, 18
-41-
ns
Rise time t
r
-16-
Turn-off delay time t
d(off)
-110-
Fall time t
f
-230-
Total switching loss E
ts
-0.52-mJ
Input capacitance C
ies
V
GE
= 0 V
V
CC
= 30 V
ƒ = 1.0 MHz
See fig. 7
- 1100 -
pF
Output capacitance C
oes
-73-
Reverse transfer capacitance C
res
-14-
Diode reverse recovery time t
rr
T
J
= 25 °C
See fig. 14
I
F
= 12 A
V
R
= 200 V
dI/dt = 200 A/μs
-4260
ns
T
J
= 125 °C - 83 120
Diode peak reverse recovery charge I
rr
T
J
= 25 °C
See fig. 15
-3.56.0
A
T
J
= 125 °C - 5.6 10
Diode reverse recovery charge Q
rr
T
J
= 25 °C
See fig. 16
- 80 180
nC
T
J
= 125 °C - 220 600
Diode peak rate of fall of recovery
during t
b
dI
(rec)M
/dt
T
J
= 25 °C
See fig. 17
-180-
A/μs
T
J
= 125 °C - 116 -
VS-CPV363M4UPbF
www.vishay.com
Vishay Semiconductors
Revision: 25-Oct-17
3
Document Number: 94486
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I
RMS
of Fundamental)
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Maximum Collector Current vs. Case Temperature
Fig. 5 - Typical Collector to Emitter Voltage vs.
Junction Temperature
0.1 1 10 100
0
2
4
6
8
10
12
f, Frequency (KHz)
LOAD CURRENT (A)
Tc = 90°C
Tj = 125°C
Power Factor = 0.8
Modulation Depth = 1.15
Vcc = 50% of Rated Voltage
0.00
0.58
1.17
1.75
2.33
2.92
3.50
Total Output Power (kW)
0.1
1
10
100
0111.0
CE
C
I , Collector-to-Emitter Current (A)
V , Collector-to-Emitter Voltage (V)
T = 150°C
T = 25°C
J
J
V = 15V
20µs PULSE WIDTH
GE
0.1
1
10
100
5678910
C
I , Collector-to-Emitter Current (A)
GE
T = 25°C
T = 150°C
J
J
V , Gate-to-Emitter Voltage (V)
V = 10V
5µs PULSE WIDTH
CC
0
2
4
6
8
10
12
14
25 50 75 100 125 150
Maximum DC Collector Current (A)
T , Case Temperature (°C)
C
V = 15V
GE
-60 -40 -20 0 20 40 60 80 100 120 140 160
1.0
2.0
3.0
T , Junction Temperature ( C)
V , Collector-to-Emitter Voltage(V)
J
°
CE
V = 15V
80 us PULSE WIDTH
GE
I = A3.4
C
I = A
6.8
C
I = A
13.6
C
P1-P3P4-P6P7-P9P10-P10

VS-CPV363M4UPBF

Mfr. #:
Buy VS-CPV363M4UPBF
Manufacturer:
Vishay Semiconductors
Description:
IGBT Transistors 600 Volt 6.8 Amp
Lifecycle:
New from this manufacturer.
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