VS-CPV363M4UPbF
www.vishay.com
Vishay Semiconductors
Revision: 25-Oct-17
4
Document Number: 94486
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction to Case
Fig. 7 - Typical Capacitance vs. Collector to Emitter Voltage
Fig. 8 - Typical Gate Charge vs. Gate to Emitter Voltage
Fig. 9 - Typical Switching Losses vs. Gate Resistance
Fig. 10 - Typical Switching Losses vs. Junction Temperature
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10
t , Rectangular Pulse Duration (sec)
1
thJC
D = 0.50
0.01
0.02
0.05
0.10
0.20
SINGLE PULSE
(THERMAL RESPONSE)
Thermal Response (Z )
P
t
2
1
t
DM
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
12
J
DM
thJC
C
0
400
800
1200
1600
2000
001011
CE
C, Capacitance (pF)
V , Collector-to-Emitter Voltage (V)
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GE
ies ge gc ce
res gc
oes ce gc
C
ies
C
res
C
oes
0 10 20 30 40 50 60
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Emitter Voltage (V)
G
GE
V = 400V
I = 6.8A
CC
C
0 12 24 36 48 60
0.30
0.32
0.34
0.36
0.38
0.40
R , Gate Resistance ( )
Total Switching Losses (mJ)
G
V = 480V
V = 15V
T = 25 C
I = 6.8A
CC
GE
J
C
°
Ω
-60 -40 -20 0 20 40 60 80 100 120 140 160
0.1
1
10
T , Junction Temperature ( C )
Total Switching Losses (mJ)
J
°
R = 23
V = 15V
V = 480V
G
GE
CC
I = A
13.6
C
I = A
6.8
C
I = A
3.4
C
Ω
