VS-EPU6006L-N3

VS-EPU6006L-N3
www.vishay.com
Vishay Semiconductors
Revision: 23-Jan-17
1
Document Number: 95944
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Ultrafast Soft Recovery Diode, 60 A FRED Pt
®
FEATURES
Ultrafast recovery time
Low forward voltage drop
175 °C operating junction temperature
Designed and qualified according to
commercial qualification
Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
VS-EPU60... series are the state of the art ultrafast recovery
rectifiers designed with optimized performance of forward
voltage drop and ultrafast recovery time.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, welding, UPS, DC/DC converters as well as
freewheeling diodes in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
PRODUCT SUMMARY
Package TO-247AD 2L
I
F(AV)
60 A
V
R
600 V
V
F
at I
F
1.05 V
t
rr
typ. 32 ns
T
J
max. 175 °C
Diode variation Single die
Cathode to base
2
1
3
Cathode
Anode
TO-247AD 2L
1
3
2
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Repetitive peak reverse voltage V
RRM
600 V
Average rectified forward current in DC I
F(AV)
T
C
= 116 °C 60
A
Single pulse forward current I
FSM
T
C
= 25 °C, t
p
= 8.3 ms; half sine wave 600
Operating junction and storage temperatures T
J
, T
Stg
-55 to +175 °C
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
V
BR
,
V
R
I
R
= 100 μA 600 - -
V
Forward voltage V
F
I
F
= 60 A - 1.2 1.5
I
F
= 60 A, T
J
= 125 °C - 1.1 1.3
I
F
= 60 A, T
J
= 175 °C - 1.05 1.2
Reverse leakage current I
R
V
R
= V
R
rated - 0.2 30
μA
T
J
= 150 °C, V
R
= V
R
rated - - 200
Junction capacitance C
T
V
R
= 600 V - 38 - pF
VS-EPU6006L-N3
www.vishay.com
Vishay Semiconductors
Revision: 23-Jan-17
2
Document Number: 95944
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DYNAMIC RECOVERY CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time t
rr
I
F
= 1 A, dI
F
/dt = 200 A/μs, V
R
= 30 V - 32 -
nsT
J
= 25 °C
I
F
= 60 A
dI
F
/dt = 200 A/μs
V
R
= 200 V
- 110 -
T
J
= 125 °C - 200 -
Peak recovery current I
RRM
T
J
= 25 °C - 10 -
A
T
J
= 125 °C - 19 -
Reverse recovery charge Q
rr
T
J
= 25 °C - 530 -
nC
T
J
= 125 °C - 1900 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and
storage temperature range
T
J
, T
Stg
-55 - 175 °C
Thermal resistance,
junction to case
R
thJC
- - 0.65
°C/W
Thermal resistance,
junction to ambient
R
thJA
Typical socket mount - - 70
Thermal resistance,
case to heat sink
R
thCS
Mounting surface, flat, smooth
and greased
-0.5-
Weight
-6-g
-0.21- oz.
Mounting torque
6
(5)
-
1.2
(10)
kgf. cm
(lbf in)
Marking device Case style TO-247AD 2L EPU6006L
VS-EPU6006L-N3
www.vishay.com
Vishay Semiconductors
Revision: 23-Jan-17
3
Document Number: 95944
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
0.0 0.5 1.0 1.5 2.0 2.5
1
10
100
1000
T
J
= 25 °C
T
J
= 150 °C
T
J
= 175 °C
V
F
- Forward Voltage Drop (V)
I
F
- InstantaneousForward Current (A)
0.01
0.1
1
10
100
0 200
V
R
- Reverse Voltage (V)
I
R
- Reverse Current (µA)
175 °C
150 °C
125 °C
25 °C
100
0.001
1000
400300 600500
100
1000
0 500 600
10
V
R
- Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
200 300 400100
t
1
-
Rectangular Pulse Duration (s)
Z
thJC
-
Thermal Impedance (A)
1E-05 1E-04 1E-03 1E-02 1E-01 1E+00
0.01
0.1
1
Single Pulse
(Thermal Resistance)
D = 0.02
D = 0.05
D = 0.01
D = 0.1
D = 0.5
D = 0.2

VS-EPU6006L-N3

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 600V 60A FRED Pt TO-247 LL 2L
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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