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Document Number: 74293
S-62240-Rev. A, 06-Nov-06
Vishay Siliconix
SUP36N20-54P
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS T
J
= 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min
Typ
Max Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
DS
= 0 V, I
D
= 250 µA
200
V
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA
2.5 4.5
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 20 V
± 100
nA
V
DS
= 0 V, V
GS
= ± 25 V
± 300
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 200 V, V
GS
= 0 V
1
µA
V
DS
= 200 V, V
GS
= 0 V, T
J
= 100 °C
25
V
DS
= 200 V, V
GS
= 0 V, T
J
= 150 °C
250
On-State Drain Current
a
I
D(on)
V
DS
≥ 10 V, V
GS
= 10 V
40 A
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 10 V, I
D
= 20 A
0.044 0.054
Ω
V
GS
= 15 V, I
D
= 20 A
0.0435 0.053
V
GS
= 10 V, I
D
= 20 A, T
J
= 100 °C
0.098
V
GS
= 10 V, I
D
= 20 A, T
J
= 150 °C
0.130
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 20 A
25 S
Dynamic
b
Input Capacitance
C
iss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
3100
pFOutput Capacitance
C
oss
300
Reverse Transfer Capacitance
C
rss
135
Total Gate Charge
c
Q
g
V
DS
= 100 V, V
GS
= 15 V, I
D
= 50 A
85 127
nC
V
DS
= 100 V, V
GS
= 10 V, I
D
= 50 A
57 85
Gate-Source Charge
c
Q
gs
14
Gate-Drain Charge
c
Q
gd
20
Gate Resistance
R
g
f = 1 MHz 1.2 1.8 Ω
Tur n -O n D e l ay T i m e
c
t
d(on)
V
DD
= 100 V, R
L
= 2 Ω
I
D
≅ 50 A, V
GEN
= 10 V, R
g
= 1 Ω
16 25
ns
Rise Time
c
t
r
170 260
Turn-Off Delay Time
c
t
d(off)
27 42
Fall Time
c
t
f
918
Source-Drain Diode Ratings and Characteristics (T
C
= 25 °C)
b
Continuous Current
I
S
36
A
Pulsed Current
I
SM
80
Forward Voltage
a
V
SD
I
F
= 20 A, V
GS
= 0 V
0.86 1.5 V
Reverse Recovery Time
t
rr
I
F
= 40 A, di/dt = 100 A/µs
116 175 ns
Peak Reverse Recovery Current
I
RM(REC)
914A
Reverse Recovery Charge
Q
rr
0.53 0.8 µC
Reverse Recovery Fall Time
t
a
84
nS
Reverse Recovery Rise Time
t
b
32
