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SUP36N20-54P-E3

P1-P3P4-P6
www.vishay.com
4
Document Number: 74293
S-62240-Rev. A, 06-Nov-06
Vishay Siliconix
SUP36N20-54P
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Gate Charge
Source-Drain Diode Forward Voltage
Drain Source Breakdown vs.
Junction Temperature
0
3
6
9
12
15
0 163248648096
I
D
=
50A
)V
(
e
ga
tl
oV
ec
ru
oS
-o
t-e
ta
G
-
Q
g
- Total Gate Charge (nC)
V
SG
V
DS
=
50 V, 100 V
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
100000
10000
0.001
0.0 0.2 0.4 1.2
1000
0.100
0.010
0.8 1.00.6
=150 °C
T
J
= 25 °C
T
J
190
200
210
220
230
240
250
- 50 - 25 0 25 50 75 100 125 150 175
V
(BR)VDSS (normalized)
T
J
- Temperature Junction (°C)
I
D
= 10 mA
On-Resistance vs. Junction Temperature
Threshold Voltage
Single Pulse Avalanche
Current Capability vs. Time
0.4
0.9
1.4
1.9
2.4
2.9
- 50 - 25 0 25 50 75 100 125 150 175
V
GS
= 10 V
T
J
- Junction Temperature (°C)
r
)
n
o(SD
e
c
n
a
ts
ise
R
-
n
O
-
)
dez
i
lamr
o
N(
V
GS
= 15 V
I
D
= 20 A
- 2.3
- 1.8
- 1.3
- 0.8
- 0.3
0.2
0.7
- 50 - 25 0 25 50 75 100 125 150 175
I
D
= 5 mA
)V( ecnairaVV
)ht(SG
T
J
- Temperature (°C)
I
D
= 250 µA
t
av
- (Sec)
AI
Dav
100
10
1
0.0001 0.001 0.01 0.10.00001
150 °C
25 °C
Document Number: 74293
S-62240-Rev. A, 06-Nov-06
www.vishay.com
5
Vishay Siliconix
SUP36N20-54P
THERMAL RATINGS
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?74293
Current Derating, Junction-to-Case
0
8
16
24
32
40
0 25 50 75 100 125 150
T
C
- Case Temperature (°C)
I
D
)A( tnerruC niarD -
Safe Operating Area
100
10
0.1 1 10 1000
- Drain Current (A)I
D
1
100
0.1
V
DS
- Drain-to-Source Voltage (V)
*V
GS
minimum V
GS
at which r
DS (on)
isspecified
>
*Limited
by r
DS (on)
10 ms
100 µs
1 ms
100 ms
DC
T
C
= 25 °C
Single Pulse
Normalized Thermal Transient Impedance, Junction-to-Case
10
-3
110
-1
10
1
0.1
0.01
Square Wave Pulse Duration (sec)
tneisnarT evitceffE dezilamroN
ecnadepmI lamrehT
-4
10
-2
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
Disclaimer
Legal Disclaimer Notice
Vishay
All product specifications and data are subject to change without notice.
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(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
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Product names and markings noted herein may be trademarks of their respective owners.
P1-P3P4-P6

SUP36N20-54P-E3

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Description:
MOSFET RECOMMENDED ALT 781-SUP57N20-33-E3
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