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PBSS303PD,115

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17
PBSS303PD_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 20 November 2009 9 of 16
NXP Semiconductors
PBSS303PD
60 V, 3 A PNP low V
CEsat
(BISS) transistor
V
CE
= −2V
(1) T
amb
= 100 °C
(2) T
amb
=25°C
(3) T
amb
= −55 °C
T
amb
=25°C
Fig 6. DC current gain as a function of collector
current; typical values
Fig 7. Collector current as a function of
collector-emitter voltage; typical values
V
CE
= −2V
(1) T
amb
= −55 °C
(2) T
amb
=25°C
(3) T
amb
= 100 °C
I
C
/I
B
=20
(1) T
amb
= −55 °C
(2) T
amb
=25°C
(3) T
amb
= 100 °C
Fig 8. Base-emitter voltage as a function of collector
current; typical values
Fig 9. Base-emitter saturation voltage as a function
of collector current; typical values
006aaa727
200
400
600
h
FE
0
I
C
(mA)
−10
−1
−10
4
−10
3
−1 −10
2
−10
(1)
(2)
(3)
−19
−38
−57
V
CE
(V)
0 −2.0−1.6−0.8 −1.2−0.4
006aaa728
−2
−4
−6
I
C
(A)
0
−171
−152
−133
I
B
= −190 mA
−114
−95
−76
006aaa729
−0.4
−0.8
−1.2
V
BE
(V)
0
I
C
(mA)
−10
−1
−10
4
−10
3
−1 −10
2
−10
(1)
(2)
(3)
006aaa730
−0.4
−0.8
−1.2
V
BEsat
(V)
0
I
C
(mA)
−10
−1
−10
4
−10
3
−1 −10
2
−10
(1)
(2)
(3)
PBSS303PD_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 20 November 2009 10 of 16
NXP Semiconductors
PBSS303PD
60 V, 3 A PNP low V
CEsat
(BISS) transistor
I
C
/I
B
=20
(1) T
amb
= 100 °C
(2) T
amb
=25°C
(3) T
amb
= −55 °C
T
amb
=25°C
(1) I
C
/I
B
= 100
(2) I
C
/I
B
=50
(3) I
C
/I
B
=10
Fig 10. Collector-emitter saturation voltage as a
function of collector current; typical values
Fig 11. Collector-emitter saturation voltage as a
function of collector current; typical values
I
C
/I
B
=20
(1) T
amb
= 100 °C
(2) T
amb
=25°C
(3) T
amb
= −55 °C
T
amb
=25°C
(1) I
C
/I
B
= 100
(2) I
C
/I
B
=50
(3) I
C
/I
B
=10
Fig 12. Collector-emitter saturation resistance as a
function of collector current; typical values
Fig 13. Collector-emitter saturation resistance as a
function of collector current; typical values
006aaa731
I
C
(mA)
−10
−1
−10
4
−10
3
−1 −10
2
−10
−10
−1
−1
V
CEsat
(V)
−10
−2
(1)
(2)
(3)
006aaa732
−10
−1
−10
−2
−1
V
CEsat
(V)
−10
−3
I
C
(mA)
−10
−1
−10
4
−10
3
−1 −10
2
−10
(1)
(2)
(3)
I
C
(mA)
−10
−1
−10
4
−10
3
−1 −10
2
−10
006aaa733
1
10
−1
10
2
10
10
3
R
CEsat
(Ω)
10
−2
(1)
(2)
(3)
I
C
(mA)
−10
−1
−10
4
−10
3
−1 −10
2
−10
006aaa734
1
10
−1
10
2
10
10
3
R
CEsat
(Ω)
10
−2
(1)
(2)
(3)
PBSS303PD_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 20 November 2009 11 of 16
NXP Semiconductors
PBSS303PD
60 V, 3 A PNP low V
CEsat
(BISS) transistor
8. Test information
Fig 14. BISS transistor switching time definition
V
CC
= −9.2 V; I
C
= −2A; I
Bon
= −0.1 A; I
Boff
=0.1A
Fig 15. Test circuit for switching times
006aaa266
−
I
Bon
(100 %)
−
I
B
input pulse
(idealized waveform)
−
I
Boff
90 %
10 %
−
I
C
(100 %)
−
I
C
t
d
t
on
90 %
10 %
t
r
output pulse
(idealized waveform)
t
f
t
t
s
t
off
R
C
R2
R1
DUT
mgd624
V
o
R
B
(probe)
450 Ω
(probe)
450 Ω
oscilloscope
oscilloscope
V
BB
V
I
V
CC
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17

PBSS303PD,115

Mfr. #:
Buy PBSS303PD,115
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT TRANS BISS TAPE-7
Lifecycle:
New from this manufacturer.
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