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PBSS303PD,115

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17
PBSS303PD_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 20 November 2009 6 of 16
NXP Semiconductors
PBSS303PD
60 V, 3 A PNP low V
CEsat
(BISS) transistor
FR4 PCB, mounting pad for collector 6 cm
2
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
Ceramic PCB, Al
2
O
3
, standard footprint
Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aaa273
10
1
10
2
10
3
Z
th(j-a)
(K/W)
10
−1
10
−5
1010
−2
10
−4
10
2
10
−1
t
p
(s)
10
−3
10
3
1
duty cycle =
1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
006aaa751
10
1
10
2
10
3
Z
th(j-a)
(K/W)
10
−1
10
−5
1010
−2
10
−4
10
2
10
−1
t
p
(s)
10
−3
10
3
1
duty cycle =
1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
PBSS303PD_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 20 November 2009 7 of 16
NXP Semiconductors
PBSS303PD
60 V, 3 A PNP low V
CEsat
(BISS) transistor
7. Characteristics
Table 7. Characteristics
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base cut-off
current
V
CB
= −60 V; I
E
=0A - - −100 nA
V
CB
= −60 V; I
E
=0A;
T
j
=150°C
--−50 μA
I
CES
collector-emitter
cut-off current
V
CE
= −48 V; V
BE
=0V - - −100 nA
I
EBO
emitter-base cut-off
current
V
EB
= −5V; I
C
=0A - - −100 nA
h
FE
DC current gain V
CE
= −2V; I
C
= −500 mA 180 265 -
V
CE
= −2V; I
C
= −1A
[1]
160 235 -
V
CE
= −2V; I
C
= −2A
[1]
130 185 -
V
CE
= −2V; I
C
= −3A
[1]
95 135 -
V
CE
= −2V; I
C
= −4A
[1]
60 80 -
V
CE
= −2V; I
C
= −5A
[1]
35 50 -
V
CE
= −2V; I
C
= −6A
[1]
20 30 -
V
CEsat
collector-emitter
saturation voltage
I
C
= −500 mA; I
B
= −50 mA - −55 −70 mV
I
C
= −1A; I
B
= −50 mA - −100 −135 mV
I
C
= −2A; I
B
= −200 mA
[1]
- −150 −200 mV
I
C
= −3A; I
B
= −150 mA
[1]
- −275 −365 mV
I
C
= −3A; I
B
= −300 mA
[1]
- −210 −290 mV
I
C
= −4A; I
B
= −400 mA
[1]
- −285 −385 mV
I
C
= −5A; I
B
= −500 mA
[1]
- −375 −495 mV
I
C
= −6A; I
B
= −600 mA
[1]
- −515 −675 mV
R
CEsat
collector-emitter
saturation resistance
I
C
= −2A; I
B
= −200 mA
[1]
- 75 100 mΩ
V
BEsat
base-emitter
saturation voltage
I
C
= −500 mA; I
B
= −50 mA - −0.78 −0.87 V
I
C
= −1A; I
B
= −50 mA - −0.80 −0.89 V
I
C
= −1A; I
B
= −100 mA
[1]
- −0.83 −0.92 V
I
C
= −3A; I
B
= −150 mA
[1]
- −0.92 −0.99 V
I
C
= −3A; I
B
= −300 mA
[1]
- −0.94 −1.02 V
V
BEon
base-emitter turn-on
voltage
V
CE
= −2V; I
C
= −2A - −0.80 −1.00 V
PBSS303PD_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 20 November 2009 8 of 16
NXP Semiconductors
PBSS303PD
60 V, 3 A PNP low V
CEsat
(BISS) transistor
[1] Pulse test: t
p
≤ 300 μs; δ≤0.02.
t
d
delay time V
CC
= −9.2 V; I
C
= −2A;
I
Bon
= −0.1 A; I
Boff
=0.1A
-13-ns
t
r
rise time - 53 - ns
t
on
turn-on time - 66 - ns
t
s
storage time - 230 - ns
t
f
fall time - 76 - ns
t
off
turn-off time - 306 - ns
f
T
transition frequency V
CE
= −10 V; I
C
= −100 mA;
f=100MHz
-110-MHz
C
c
collector capacitance V
CB
= −10 V; I
E
=i
e
=0A;
f=1MHz
-58-pF
Table 7. Characteristics
…continued
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17

PBSS303PD,115

Mfr. #:
Buy PBSS303PD,115
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT TRANS BISS TAPE-7
Lifecycle:
New from this manufacturer.
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