STB20NM50 - STB20NM50-1 - STP20NM50 - STP20NM50FP Electrical ratings
3/14
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter
Value
Unit
D²PAK / I²PAK
TO-220
TO-220FP
V
DS
Drain source voltage 500 V
V
GS
Gate-source voltage ± 30 V
I
D
Drain current (continuous) at T
C
= 25°C
20
20
(1)
1. Limited only by maximum temperature allowed
A
I
D
Drain current (continuous) at T
C
= 100°C
12.6
12.6
(1)
A
I
DM
(2)
2. Pulse width limited by safe operating area
Drain current (pulsed) 80
80
(1)
A
P
TOT
Total dissipation at T
C
= 25°C
192 45 W
Derating factor 1.54 0.36 W/°C
dv/dt
(3)
3. I
SD
< 20A, di/dt < 400A/µs, V
DD
< V
(BR)DSS
, T
J
< T
JMAX
Peak diode recovery voltage slope 15 V/ns
V
ISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1s;T
C
=25°C)
-- 2500 V
T
j
T
stg
Operating junction temperature
Storage temperature
-65 to 150 °C
Table 2. Thermal data
Symbol Parameter
Value
Unit
D²PAK / I²PAK
TO-220
TO-220FP
Rthj-case Thermal resistance junction-case max 0.65 2.8 °C/W
Rthj-amb Thermal resistance junction-amb max 62.5 °C/W
T
l
Maximum lead temperature for soldering
purpose
300 °C
Table 3. Avalanche characteristics
Symbol Parameter Value Unit
I
AR
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
10 A
E
AS
Single pulse avalanche energy
(starting Tj=25°C, I
D
= 5A, V
DD
= 50V)
650 mJ
