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STB20NM50T4

P1-P3P4-P6P7-P9P10-P12P13-P14
Electrical characteristics STB20NM50 - STB20NM50-1 - STP20NM50 - STP20NM50FP
4/14
2 Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 4. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source breakdown
voltage
I
D
= 250µA, V
GS
= 0
500 V
I
DSS
Zero gate voltage drain
current (V
GS
= 0)
V
DS
= Max rating,
V
DS
= Max rating @125°C
1
10
µA
µA
I
GSS
Gate body leakage current
(V
DS
= 0)
V
GS
= ±30V
±100 µA
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250 µA
345V
R
DS(on)
Static drain-source on
resistance
V
GS
= 10 V, I
D
= 10 A
0.20 0.25 Ω
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
g
fs
(1)
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Forward transconductance
V
DS
> I
D(ON)
x R
DS(ON)max,
I
D
= 10A
10 S
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V
DS
=25V, f=1 MHz,
V
GS
=0
1480
285
34
pF
pF
pF
C
oss eq.
(2)
2. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80% V
DSS
Equivalent output
capacitance
V
GS
=0, V
DS
=0V to 400V
130 pF
Rg Gate input resistance
f=1MHz Gate DC Bias=0
Test Signal Level=20mV
Open Drain
1.6 Ω
Q
g
Q
gs
Q
gd
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
=400V, I
D
= 20A
V
GS
=10V
(see Figure 15)
40
13
19
56 nC
nC
nC
STB20NM50 - STB20NM50-1 - STP20NM50 - STP20NM50FP Electrical characteristics
5/14
Table 6. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
t
r
Turn-on delay time
Rise time
V
DD
=250 V, I
D
=10A,
R
G
=4.7Ω, V
GS
=10V
(see Figure 14)
24
16
ns
ns
t
d(off)
t
f
Turn-off delay time
Fall time
40
12
ns
ns
t
r(Voff)
t
f
t
c
Off-voltage rise time
Fall time
Cross-over time
V
DD
=400 V, I
D
=20A,
R
G
=4.7Ω, V
GS
=10V
(see Figure 16)
9
8.5
23
ns
ns
ns
Table 7. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max Unit
I
SD
I
SDM
(1)
1. Pulse width limited by safe operating area
Source-drain current
Source-drain current (pulsed)
20
80
A
A
V
SD
(2)
2. Pulsed: pulse duration 300µs duty cycle 1.5%
Forward on voltage
I
SD
=20A, V
GS
=0
1.5 V
t
rr
Q
rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
=20A,di/dt=100A/µs,
V
DD
=100 V, Tj= 25°C
(see Figure 16)
350
4.6
26
ns
µC
A
t
rr
Q
rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
=20A,di/dt=100A/µs,
V
DD
=100 V, Tj=150°C
(see Figure 16)
435
5.9
27
ns
µC
A
Electrical characteristics STB20NM50 - STB20NM50-1 - STP20NM50 - STP20NM50FP
6/14
2.1 Electrical characteristics (curves)
Figure 1. Safe operating area for TO-220/
D²PA K/I² PAK
Figure 2. Thermal impedance for TO-220/
D²PAK/I²PAK
Figure 3. Safe operating area for TO-220FP Figure 4. Thermal impedance for TO-220FP
Figure 5. Output characteristics Figure 6. Transfer characteristics
P1-P3P4-P6P7-P9P10-P12P13-P14

STB20NM50T4

Mfr. #:
Buy STB20NM50T4
Manufacturer:
STMicroelectronics
Description:
MOSFET N-Ch 500 Volt 20 Amp
Lifecycle:
New from this manufacturer.
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