SI4966DY-T1-E3 Datasheet SI4966DY-T1-E3, SI4966DY-T1-GE3 | P1-P3

Vishay Siliconix

Si4966DY

Document Number: 70718

S09-0869-Rev. D, 18-May-09

www.vishay.com

1

Dual N-Channel 2.5-V (G-S) MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

• TrenchFET

®

Power MOSFET

• 100 % R

g

Tested

• Compliant to RoHS Directive 2002/95/EC

PRODUCT SUMMARY

V

DS

(V) R

DS(on)

(Ω)I

D

(A)

20

0.025 at V

GS

= 4.5 V

± 7.1

0.035 at V

GS

= 2.5 V

± 6.0

S

1

D

1

G

1

D

1

S

2

D

2

G

2

D

2

SO-8

5

6

7

8

Top View

2

3

4

1

Ordering Information: Si4966DY-T1-E3 (Lead (Pb)-free)

Si4966DY-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

G

1

D

1

S

1

N-Channel MOSFET

G

2

D

2

S

2

Notes:

a. Surface Mounted on FR4 board, t ≤ 10 s.

For SPICE model information via the Worldwide Web: www.vishay.com/www/product/spice.htm

.

ABSOLUTE MAXIMUM RATINGS T

A

= 25 °C, unless otherwise noted

Parameter Symbol Limit Unit

Drain-Source Voltage

V

DS

20

V

Gate-Source Voltage

V

GS

± 12

Continuous Drain Current (T

J

= 150 °C)

a

T

A

= 25 °C

I

D

± 7.1

A

T

A

= 70 °C

± 5.7

Pulsed Drain Current (10 µs Pulse Width)

I

DM

± 40

Continuous Source Current (Diode Conduction)

a

I

S

1.7

Maximum Power Dissipation

a

T

A

= 25 °C

P

D

2

W

T

A

= 70 °C

1.3

Operating Junction and Storage Temperature Range

T

J

, T

stg

- 55 to 150 °C

THERMAL RESISTANCE RATINGS

Parameter Symbol Limit Unit

Maximum Junction-to-Ambient

a

R

thJA

62.5 °C/W

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Document Number: 70718

S09-0869-Rev. D, 18-May-09

Vishay Siliconix

Si4966DY

Notes:

a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS T

J

= 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

Gate Threshold Voltage

V

GS(th)

V

DS

= V

GS

, I

D

= 250 µA

0.6 1.5 V

Gate-Body Leakage

I

GSS

V

DS

= 0 V, V

GS

= ± 12 V

± 100 nA

Zero Gate Voltage Drain Current

I

DSS

V

DS

= 20 V, V

GS

= 0 V

1

µA

V

DS

= 20 V, V

GS

= 0 V, T

J

= 55 °C

5

On-State Drain Current

a

I

D(on)

V

DS

≥ 5 V, V

GS

= 4.5 V

20 A

Drain-Source On-State Resistance

a

R

DS(on)

V

GS

= 4.5 V, I

D

= 7.1 A

0.019 0.025

Ω

V

GS

= 2.5 V, I

D

= 6.0 A

0.025 0.035

Forward Transconductance

a

g

fs

V

DS

= 10 V, I

D

= 7.1 A

27 S

Diode Forward Voltage

a

V

SD

I

S

= 1.7 A, V

GS

= 0 V

1.2 V

Dynamic

b

Total Gate Charge

Q

g

V

DS

= 10 V, V

GS

= 4.5 V, I

D

= 7.1 A

25 50

nCGate-Source Charge

Q

gs

6.5

Gate-Drain Charge

Q

gd

4

Gate Resistance

R

g

f = 1 MHz 1.6 2.7 Ω

Tur n - O n D e l ay Time

t

d(on)

V

DD

= 10 V, R

L

= 10 Ω

I

D

≅ 1 A, V

GEN

= 4.5 V, R

g

= 6 Ω

40 60

ns

Rise Time

t

r

40 60

Turn-Off Delay Time

t

d(off)

90 150

Fall Time

t

f

40 60

Source-Drain Reverse Recovery Time

t

rr

I

F

= 1.7 A, dI/dt = 100 A/µs

40 80

Document Number: 70718

S09-0869-Rev. D, 18-May-09

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Vishay Siliconix

Si4966DY

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current

Gate Charge

0

10

20

30

40

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

V

DS

- Drain-to-Source Voltage (V)

- Drain Current (A)I

D

V

GS

= 5 V thru 3 V

2 V

1 V, 1.5 V

2.5 V

0.00

0.02

0.04

0.06

0.08

0.10

0 10203040

- On-Resistance (Ω)R

DS(on)

I

D

- Drain Current (A)

V

GS

= 2.5 V

V

GS

= 4.5 V

0

1

2

3

4

5

0 5 10 15 20 25

- Gate-to-Source Voltage (V)

Q

g

- Total Gate Charge (nC)

V

GS

V

DS

= 10 V

I

D

= 7.1 A

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0

10

20

30

40

0.0 0.5 1.0 1.5 2.0 2.5 3.0

V

GS

- Gate-to-Source Voltage (V)

- Drain Current (A)I

D

T

C

= 125 °C

- 55 °C

25 °C

0

800

1600

2400

3200

4000

048121620

V

DS

- Drain-to-Source Voltage (V)

C - Capacitance (pF)

C

rss

C

oss

C

iss

R

DS (on)

- On-Resistance

(Normalized)

0.6

0.8

1.0

1.2

1.4

1.6

- 50 - 25 0 25 50 75 100 125 150

V

GS

= 4.5 V

I

D

= 7.1 A

T

J

- Junction Temperature (°C)

SI4966DY-T1-E3

SI4966DY-T1-E3

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