SI4966DY-T1-E3

Mfr. #:: SI4966DY-T1-E3
Manufacturer:: Vishay / Siliconix
Description:: MOSFET RECOMMENDED ALT 781-SI9926CDY-T1-GE3
Lifecycle:: New from this manufacturer.
Datasheet:: SI4966DY-T1-E3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: SI4966DY-T1-E3 Datasheet SI4966DY-T1-E3 Datasheet (P4-P6)SI4966DY-T1-E3 Datasheet (P7-P8)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Vishay

Product Category:: MOSFET

RoHS:: E

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: SO-8

Tradename:: TrenchFET

Packaging:: Reel

Height:: 1.75 mm

Length:: 4.9 mm

Series:: SI4

Width:: 3.9 mm

Brand:: Vishay / Siliconix

Product Type:: MOSFET

Factory Pack Quantity:: 2500

Subcategory:: MOSFETs

Part # Aliases:: SI4966DY-E3

Unit Weight:: 0.006596 oz

Tags: SI4966DY-T, SI4966D, SI4966, SI496, SI49, SI4

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI4966DY-T1-E3 Description

***ure Electronics: Dual N-Channel 20 V 0.025 Ohms Surface Mount Power Mosfet - SOIC-8

***ied Electronics & Automation: MOSFET, Power,Dual N-Ch,VDSS 20V,RDS(ON) 0.019Ohm,ID+/-7.1A,SO-8,PD 2W,VGS+/-12V

***ical: Trans MOSFET N-CH 20V 7.1A 8-Pin SOIC N T/R

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:7.1A; On Resistance, Rds(on):0.025ohm; Rds(on) Test Voltage, Vgs:4.5V ;RoHS Compliant: Yes

***nell: MOSFET, NP, REEL 2500; Transistor Type:MOSFET; Transistor Polarity:Dual N; Voltage, Vds Typ:20V; Current, Id Cont:7.2A; Resistance, Rds On:0.025ohm; Voltage, Vgs Rds on Measurement:2.5V; Voltage, Vgs th Typ:1.5V; Case Style:SOIC; Termination Type:SMD; Current, Idm Pulse:40A; N-channel Gate Charge:25nC; No. of Pins:8; Power, Pd:2W; Quantity, Reel:2500; Resistance, Rds on @ Vgs = 2.5V:0.035ohm; Resistance, Rds on @ Vgs = 4.5V:0.025ohm; SMD Marking:SI4966DY; Transistors, No. of:2; Voltage, Vds Max:20V; Width, Tape:12mm

Market price

Part #	Mfg.	Description	Stock	Price
SI4966DY-T1-E3 DISTI # SI4966DY-T1-E3TR-ND	Vishay Siliconix	MOSFET 2N-CH 20V 8SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Limited Supply - Call
SI4966DY-T1-E3 DISTI # SI4966DY-T1-E3CT-ND	Vishay Siliconix	MOSFET 2N-CH 20V 8SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
SI4966DY-T1-E3 DISTI # SI4966DY-T1-E3DKR-ND	Vishay Siliconix	MOSFET 2N-CH 20V 8SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
SI4966DY-T1-E3 DISTI # 06J8013	Vishay Intertechnologies	DUAL N CHANNEL MOSFET, 20V, SOIC, FULL REEL,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:7.1A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.025ohm,Rds(on) Test Voltage Vgs:4.5V,Power Dissipation Pd:2W RoHS Compliant: Yes	0
SI4966DY-T1-E3 DISTI # 70026027	Vishay Siliconix	MOSFET,Power,Dual N-Ch,VDSS 20V,RDS(ON) 0.019Ohm,ID +/-7.1A,SO-8,PD 2W,VGS +/-1 RoHS: Compliant	0	2500:$1.0500
SI4966DY-T1-E3 DISTI # 781-SI4966DY-T1-E3	Vishay Intertechnologies	MOSFET RECOMMENDED ALT 781-SI9926CDY-T1-GE3 RoHS: Compliant	0
SI4966DY-T1 DISTI # 781-SI4966DY-TR	Vishay Intertechnologies	MOSFET RECOMMENDED ALT 781-SI9926CDY-E3 RoHS: Not compliant	0
SI4966DY-T1-E3	Vishay Intertechnologies		1666

Related products

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	Mfr.#: SI4966DY-T1-E3 OMO.#: OMO-SI4966DY-T1-E3	MOSFET RECOMMENDED ALT 781-SI9926CDY-T1-GE3
	Mfr.#: SI4966DY-T1-GE3 OMO.#: OMO-SI4966DY-T1-GE3	MOSFET RECOMMENDED ALT 781-SI9926CDY-T1-GE3
	Mfr.#: SI4966DY-T1-GE3 OMO.#: OMO-SI4966DY-T1-GE3-VISHAY	RF Bipolar Transistors MOSFET 20V 7.1A 2.0W 25mohm @ 4.5V
	Mfr.#: SI4966DY OMO.#: OMO-SI4966DY-1190	MOSFET 20V 7.1A 2W
	Mfr.#: SI4966DY-E3 OMO.#: OMO-SI4966DY-E3-1190	MOSFET 20V 7.1A 2W
	Mfr.#: SI4966DY-T1 OMO.#: OMO-SI4966DY-T1-1190	MOSFET RECOMMENDED ALT 781-SI9926CDY-E3
	Mfr.#: SI4966DY-T1-E3 OMO.#: OMO-SI4966DY-T1-E3-VISHAY	MOSFET 2N-CH 20V 8SOIC
	Mfr.#: SI4966DYT1 OMO.#: OMO-SI4966DYT1-1190	New and Original

Availability

Stock:: Available
On Order:: 2500
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Current price of SI4966DY-T1-E3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

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SI4966DY-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes