R07DS0088EJ0200 Rev.2.00 Page 1 of 6
Nov 16, 2010
Preliminary Datasheet
RJP60D0DPM
Silicon N Channel IGBT
High Speed Power Switching
Features
Short circuit withstand time (5 s typ.)
Low collector to emitter saturation voltage
V
CE(sat)
= 1.6 V typ. (I
C
= 22 A, V
GE
= 15V, Ta = 25°C)
Gate to emitter voltage rating 30 V
Pb-free lead plating and chip bonding
Outline
RENESAS Package code: PRSS0003ZA-A
(Package name: TO-3PFM)
1
2
3
1. Gate
2. Collecto
3. Emitter
C
G
E
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Collector to emitter voltage V
CES
600 V
Gate to emitter voltage V
GES
±30 V
Tc = 25°C I
C
45 A Collector current
Tc = 100°C I
C
22 A
Collector peak current ic(peak)
Note1
90 A
Collector dissipation P
C
Note2
40 W
Junction to case thermal impedance j-c
Note2
3.125 °C/ W
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tc = 25C
R07DS0088EJ0200
Rev.2.00
Nov 16, 2010