RJP60D0DPM Preliminary
R07DS0088EJ0200 Rev.2.00 Page 4 of 6
Nov 16, 2010
Gate to Emitter Voltage V
GE
(V)
Collector to Emitter Satularion Voltage
vs.
Gate to Emitter Voltage (Typical)
Collector to Emitter Satularion Voltage
vs.
Gate to Emitter Voltage (Typical)
Gate to Emitter Voltage V
GE
(V)
0
4
2
6
8
0 4 812 2016
0
4
2
6
8
Collector to Emitter Satularion Voltage
V
CE(sat)
(V)
Collector to Emitter Satularion Voltage
V
CE(sat)
(V)
Ta = 25
°
C
Pulse Test
I
C
= 22 A
45 A
0 4 812 2016
Ta = 150
°
C
Pulse Test
I
C
= 22 A
45 A
1 10 100
Swithing Energy Losses E (µJ)
Collector Current I
C
(A)
(Inductive load)
1
100
10
1000
Switching Caracteristics (Typical) (1)
Switching Caracteristics (Typical) (2)
Collector Current I
C
(A)
(Inductive load)
Switching Times t (ns)
1 10 100
10
1000
100
10000
V
CC
= 300 V, V
GE
= 15 V
Rg = 5 Ω, Ta = 25
°
C
t
d(off)
t
d(on)
t
f
t
r
V
CC
= 300 V, V
GE
= 15 V
Rg = 5 Ω, Ta = 25
°
C
Eon
Eoff
Switching Caracteristics (Typical) (3)
Switching Caracteristics (Typical) (4)
10
100
1000
2 5 10 20 50
10
100
1000
Gate Registance Rg (Ω)
(Inductive load)
Gate Registance Rg (Ω)
(Inductive load)
Swithing Energy Losses E (µJ)
Switching Times t (ns)
V
CC
= 300 V, V
GE
= 15 V
I
C
= 22 A, Ta = 25
°
C
t
d(off)
t
d(on)
t
f
t
r
2 5 10 20 50
V
CC
= 300 V, V
GE
= 15 V
I
C
= 22 A, Ta = 25
°
C
Eoff
Eon
