APT60M80L2VR
050-5991 Rev B 6-2004
50,000
10,000
5000
1000
500
100
200
100
10
1
T
C
=+25°C
T
J
=+150°C
SINGLE PULSE
OPERATION HERE
LIMITED BY R
DS
(ON)
C
rss
C
iss
C
oss
10mS
1mS
100µS
T
J
=+150°C
T
J
=+25°C
260
100
10
1
16
12
8
4
0
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS) V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Q
g
, TOTAL GATE CHARGE (nC) V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS) I
D
, DRAIN CURRENT (AMPERES)
I
DR
, REVERSE DRAIN CURRENT (AMPERES) C, CAPACITANCE (pF)
I
D
(A) I
D
(A)
FIGURE 14, DELAY TIMES vs CURRENT FIGURE 15, RISE AND FALL TIMES vs CURRENT
I
D
(A) R
G
, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY vs CURRENT FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
V
DD
= 400V
R
G
= 5Ω
T
J
= 125°C
L = 100µH
E
on
E
off
t
r
t
f
SWITCHING ENERGY (µJ) t
d(on)
and t
d(off)
(ns)
SWITCHING ENERGY (µJ) t
r
and t
f
(ns)
30 50 70 90 110 30 50 70 90 110
30 40 50 60 70 80 90 100 110 0 5 10 15 20 25 30 35 40 45 50
V
DD
= 400V
I
D
= 65A
T
J
= 125°C
L = 100µH
E
ON
includes
diode reverse recovery.
t
d(on)
t
d(off)
E
on
E
off
600
500
400
300
200
100
0
8,000
6,000
4,000
2,000
0
V
DD
= 400V
R
G
= 5Ω
T
J
= 125°C
L = 100µH
V
DD
= 400V
R
G
= 5Ω
T
J
= 125°C
L = 100µH
E
ON
includes
diode reverse recovery.
200
150
100
50
0
25,000
20,000
15,000
10,000
5,000
0
I
D
= 65A
1 10 100 600 0 10 20 30 40 50
0 100 200 300 400 500 600 700 800 0.3 0.5 0.7 0.9 1.1 1.3 1.5
V
DS
=300V
V
DS
=120V
V
DS
=480V
