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IXFX220N17T2
P1-P3
P4-P6
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFK220N17T2
IXFX220N17T2
Fig. 7. Input A
dm
itta
nce
0
20
40
60
80
100
120
140
160
180
200
3.0
3.5
4.0
4.5
5.0
5.5
6.0
V
GS
- Vol
ts
I
D
- Amperes
T
J
= 150ºC
- 40º
C
25ºC
Fig. 8. T
ransc
onduct
a
nce
0
50
100
150
200
250
300
350
0
20
40
60
80
100
120
140
160
180
200
220
I
D
- Am
pere
s
g
f s
- Si
emens
T
J
= - 40º
C
150ºC
25ºC
Fig. 9. Forwa
rd Volt
age
Drop of Intrinsic
Diode
0
40
80
120
160
200
240
280
320
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
V
SD
- Vol
ts
I
S
- Amper
es
T
J
= 150ºC
T
J
= 25ºC
Fig. 10. G
at
e Cha
rge
0
1
2
3
4
5
6
7
8
9
10
0
50
100
150
200
25
0
300
350
400
450
500
Q
G
-
N
a
no
C
o
ulo
mbs
V
GS
- Volt
s
V
DS
= 85V
I
D
= 11
0A
I
G
= 10
mA
Fig. 11. Ca
pac
ita
nce
0.1
1.0
10.0
100.0
0
5
1
0
15
20
25
30
35
40
V
DS
- Vol
ts
Capa
cit
ance - N
anoFara
ds
f
= 1 MH
z
C
iss
C
rss
C
oss
Fig. 12. Forw
ard-
Bias
Sa
fe
Ope
rat
ing A
rea
1
10
100
1,000
1
10
100
1,000
V
DS
- Vol
ts
I
D
- Amperes
25µs
100µs
1ms
R
DS
(
on
)
Lim
i
t
T
J
= 175ºC
T
C
= 25
ºC
Single Pulse
© 2010 IXYS CORPORATION, All Rights Reserved
IXFK220N17T2
IXFX220N17T2
Fig
. 14. R
esistive T
urn
-on
Rise T
im
e
vs. D
r
ain
C
u
rr
en
t
0
50
100
150
200
250
300
350
40
60
80
100
120
1
40
160
1
80
200
I
D
- A
m
p
e
res
t
r
- Nanoseconds
T
J
= 25º
C
T
J
=
125ºC
R
G
= 1
,
V
GS
= 10
V
V
DS
= 8
5V
Fi
g
. 1
5. R
esi
sti
ve T
u
rn
-o
n
Swi
tchi
n
g
T
im
es
vs.
Gate R
esi
stan
ce
0
100
200
300
400
500
600
700
123456789
1
0
R
G
- Oh
m
s
t
r
- Nanoseconds
20
40
60
80
100
120
140
160
t
d
(
on
)
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC,
V
GS
= 10V
V
DS
= 85
V
I
D
= 100A
I
D
= 200A
Fi
g
. 16.
Re
sist
ive T
u
r
n-o
ff Swi
tch
i
ng
T
im
es
vs
. J
unc
t
ion Tem
per
at
ure
150
200
250
300
350
400
450
500
550
600
25
35
45
55
65
75
85
95
105
115
12
5
T
J
- Deg
ree
s Cen
t
ig
rad
e
t
f
- Nanoseconds
60
70
80
90
100
110
120
130
140
150
t
d
(
off
)
- Na
nose
conds
t
f
t
d(off)
- - - -
R
G
= 1
, V
GS
= 10
V
V
DS
= 8
5V
I
D
=
100A
I
D
=
200A
Fi
g
. 1
7. R
esi
sti
ve T
u
rn
-o
ff Sw
itch
i
ng
T
i
m
e
s
vs. D
r
ain
C
u
rr
en
t
0
100
200
300
400
500
600
40
60
80
100
120
140
1
60
180
200
I
D
- A
m
p
eres
t
f
- Nanoseconds
50
70
90
110
130
150
170
t
d
(
off
)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 1
, V
GS
= 10
V
V
DS
= 85
V
T
J
= 25º
C
T
J
= 125ºC
Fi
g
. 1
3. R
esi
sti
ve T
u
r
n-o
n
R
ise
T
i
m
e
vs
. Junct
ion T
em
perat
ure
50
100
150
200
250
300
350
400
25
3
5
45
55
65
75
85
95
105
115
125
T
J
- Deg
ree
s Cen
t
ig
rad
e
t
r
- Nanoseconds
R
G
= 1
, V
GS
= 10V
V
DS
= 85
V
I
D
= 200A
I
D
= 100A
Fig
. 18. R
esistive T
ur
n-off Switchi
ng
T
i
m
es
vs. Gate Resistance
100
200
300
400
500
600
700
800
12345
6789
1
0
R
G
- Oh
m
s
t
f
- Nanoseconds
0
100
200
300
400
500
600
700
t
d
(
off
)
- Nanoseconds
t
f
t
d(off)
- - - -
T
J
= 125ºC, V
GS
= 10
V
V
DS
= 8
5V
I
D
= 200A
I
D
= 100A
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFK220N17T2
IXFX220N17T2
IXYS REF:F_220N17T2(8V)1-18-10
Fi
g
.
19.
M
axi
m
um
T
ran
si
en
t T
h
er
m
al
I
m
p
eda
nce
0.
001
0.
010
0.
100
1.
000
0.00
001
0.
0001
0.001
0.
01
0.
1
1
10
Puls
e
W
i
dt
h -
Se
c
o
nds
Z
(th)J
C
- º
C
/
W
Fig. 19. M
a
xim
um
T
ransie
nt T
herm
al Im
peda
nce
.sadgsfgsf
0.
200
P1-P3
P4-P6
IXFX220N17T2
Mfr. #:
Buy IXFX220N17T2
Manufacturer:
Littelfuse
Description:
MOSFET GigaMOS Trench T2 HiperFET Pwr MOSFET
Lifecycle:
New from this manufacturer.
Delivery:
DHL
FedEx
Ups
TNT
EMS
Payment:
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IXFX220N17T2
IXFK220N17T2