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NSVMMBT3906TT1G

P1-P3P4-P6P7-P7
© Semiconductor Components Industries, LLC, 2006
August, 2017 − Rev. 3
1 Publication Order Number:
MMBT3906TT1/D
MMBT3906TT1
General Purpose
Transistors
PNP Silicon
This transistor is designed for general purpose amplifier
applications. It is housed in the SOT−416/SC−75 package which is
designed for low power surface mount applications.
Features
• NSVM Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T
A
= 25°C)
Rating
Symbol Value Unit
Collector−Emitter Voltage V
CEO
−40 Vdc
Collector−Base Voltage V
CBO
−40 Vdc
Emitter−Base Voltage V
EBO
−5.0 Vdc
Collector Current − Continuous I
C
−200 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation,
FR−4 Board (Note 1) @T
A
= 25°C
Derated above 25°C
P
D
200
1.6
mW
mW/°C
Thermal Resistance, Junction−to−Ambient
(Note 1)
R
q
JA
600 °C/W
Total Device Dissipation,
FR−4 Board (Note 2) @T
A
= 25°C
Derated above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance, Junction−to−Ambient
(Note 2)
R
q
JA
400 °C/W
Junction and Storage Temperature Range T
J
, T
stg
−65 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 × 1.0 Inch Pad
Device Package Shipping
†
ORDERING INFORMATION
CASE 463
SOT−416/SC−75
STYLE 1
3000 / Tape &
Reel
MARKING DIAGRAM
3
2
1
GENERAL PURPOSE
AMPLIFIER TRANSISTORS
SURFACE MOUNT
COLLECTOR
3
1
BASE
2
EMITTER
2A M G
G
2A = Device Code
M = Date Code*
G = Pb−Free Package
1
MMBT3906TT1G SOT−416
(Pb−Free)
*Date Code orientation may vary depending up-
on manufacturing location.
(Note: Microdot may be in either location)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
www.onsemi.com
NSVMMBT3906TT1G SOT−416
(Pb−Free)
3000 / Tape &
Reel
MMBT3906TT1
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 3)
(I
C
= −1.0 mAdc, I
B
= 0)
V
(BR)CEO
−40 −
Vdc
Collector−Base Breakdown Voltage
(I
C
= −10 mAdc, I
E
= 0)
V
(BR)CBO
−40 −
Vdc
Emitter−Base Breakdown Voltage
(I
E
= −10 mAdc, I
C
= 0)
V
(BR)EBO
−5.0 −
Vdc
Base Cutoff Current
(V
CE
= −30 Vdc, V
EB
= −3.0 Vdc)
I
BL
− −50
nAdc
Collector Cutoff Current
(V
CE
= −30 Vdc, V
EB
= −3.0 Vdc)
I
CEX
− −50
nAdc
ON CHARACTERISTICS (Note 3)
DC Current Gain
(I
C
= −0.1 mAdc, V
CE
= −1.0 Vdc)
(I
C
= −1.0 mAdc, V
CE
= −1.0 Vdc)
(I
C
= −10 mAdc, V
CE
= −1.0 Vdc)
(I
C
= −50 mAdc, V
CE
= −1.0 Vdc)
(I
C
= −100 mAdc, V
CE
= −1.0 Vdc)
h
FE
60
80
100
60
30
−
−
300
−
−
−
Collector−Emitter Saturation Voltage
(I
C
= −10 mAdc, I
B
= −1.0 mAdc)
(I
C
= −50 mAdc, I
B
= −5.0 mAdc)
V
CE(sat)
−
−
−0.25
−0.4
Vdc
Base−Emitter Saturation Voltage
(I
C
= −10 mAdc, I
B
= −1.0 mAdc)
(I
C
= −50 mAdc, I
B
= −5.0 mAdc)
V
BE(sat)
−0.65
−
−0.85
−0.95
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(I
C
= −10 mAdc, V
CE
= −20 Vdc, f = 100 MHz)
f
T
250 −
MHz
Output Capacitance
(V
CB
= −5.0 Vdc, I
E
= 0, f = 1.0 MHz)
C
obo
− 4.5
pF
Input Capacitance1
(V
EB
= −0.5 Vdc, I
C
= 0, f = 1.0 MHz)
C
ibo
− 10.0
pF
Input Impedance
(V
CE
= −10 Vdc, I
C
= −1.0 mAdc, f = 1.0 kHz)
h
ie
2.0 12
k W
Voltage Feedback Ratio
(V
CE
= −10 Vdc, I
C
= −1.0 mAdc, f = 1.0 kHz)
h
re
0.1 10
X 10
−4
Small−Signal Current Gain
(V
CE
= −10 Vdc, I
C
= −1.0 mAdc, f = 1.0 kHz)
h
fe
100 400
−
Output Admittance
(V
CE
= −10 Vdc, I
C
= −1.0 mAdc, f = 1.0 kHz)
h
oe
3.0 60
mmhos
Noise Figure
(V
CE
= −5.0 Vdc, I
C
= −100 mAdc, R
S
= 1.0 k W, f = 1.0 kHz)
NF
− 4.0
dB
SWITCHING CHARACTERISTICS
Delay Time
(V
CC
= −3.0 Vdc, V
BE
= 0.5 Vdc) t
d
− 35
ns
Rise Time (I
C
= −10 mAdc, I
B1
= −1.0 mAdc) t
r
− 35
Storage Time (V
CC
= −3.0 Vdc, I
C
= −10 mAdc) t
s
− 225
ns
Fall Time
(I
B1
= I
B2
= −1.0 mAdc)
t
f
− 75
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
MMBT3906TT1
www.onsemi.com
3
Figure 1. Normalized Thermal Response
0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000
0.001
0.01
0.1
1.0
r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE
t, TIME (s)
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 2. Delay and Rise Time
Equivalent Test Circuit
Figure 3. Storage and Fall Time
Equivalent Test Circuit
3 V
275
10 k
1N916
C
S
< 4 pF*
3 V
275
10 k
C
S
< 4 pF*
< 1 ns
+10.6 V
300 ns
DUTY CYCLE = 2%
< 1 ns
+9.1 V
10.9 V
DUTY CYCLE = 2%
t
1
0
10 < t
1
< 500 ms
* Total shunt capacitance of test jig and connectors
P1-P3P4-P6P7-P7

NSVMMBT3906TT1G

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Buy NSVMMBT3906TT1G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT SMALL SIGNAL GENERAL
Lifecycle:
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