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NSVMMBT3906TT1G

P1-P3P4-P6P7-P7
MMBT3906TT1
www.onsemi.com
4
TYPICAL TRANSIENT CHARACTERISTICS
C
ibo
C
obo
Figure 4. Capacitance
REVERSE BIAS VOLTAGE (VOLTS)
2.0
3.0
5.0
7.0
10
1.0
0.1
Figure 5. Charge Data
I
C
, COLLECTOR CURRENT (mA)
5000
1.0
V
CC
= 40 V
I
C
/I
B
= 10
Q, CHARGE (pC)
3000
2000
1000
500
300
200
700
100
50
70
2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
CAPACITANCE (pF)
1.0 2.0 3.0 5.0 7.0 10 20
30 40
0.2 0.3 0.5 0.7
Q
T
Q
A
T
J
= 25°C
T
J
= 125°C
Figure 6. Turn−On Time
I
C
, COLLECTOR CURRENT (mA)
70
100
200
300
500
50
TIME (ns)
1.0 2.0 3.0 10 20
70
5
100
5.0 7.0 30 50
200
10
30
7
20
I
C
/I
B
= 10
t
r
@ V
CC
= 3.0 V
t
d
@ V
OB
= 0 V
40 V
15 V
2.0 V
Figure 7. Fall Time
I
C
, COLLECTOR CURRENT (mA)
70
100
200
300
500
50
1.0 2.0 3.0 10 20
70
5
100
5.0 7.0 30 50
200
10
30
7
20
t , FALL TIME (ns)
f
V
CC
= 40 V
I
B1
= I
B2
I
C
/I
B
= 20
I
C
/I
B
= 10
MMBT3906TT1
www.onsemi.com
5
TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(V
CE
= −5.0 Vdc, T
A
= 25°C, Bandwidth = 1.0 Hz)
f = 1.0 kHz
I
C
= 1.0 mA
I
C
= 0.5 mA
I
C
= 50 mA
I
C
= 100 mA
SOURCE RESISTANCE = 200 W
I
C
= 1.0 mA
SOURCE RESISTANCE = 200 W
I
C
= 0.5 mA
SOURCE RESISTANCE = 2.0 k
I
C
= 100 mA
SOURCE RESISTANCE = 2.0 k
I
C
= 50 mA
Figure 8.
f, FREQUENCY (kHz)
1.0
2.0
3.0
4.0
5.0
0.1
Figure 9.
R
S
, SOURCE RESISTANCE (kW)
0
NF, NOISE FIGURE (dB)
1.0 2.0 4.0 10 20
40
0.2 0.4
0
100
4.0
6.0
8.0
10
2.0
12
0.1 1.0 2.0 4.0 10 20
40
0.2 0.4
100
NF, NOISE FIGURE (dB)
h
fe
, CURRENT GAIN
Figure 10. Current Gain
I
C
, COLLECTOR CURRENT (mA)
70
100
200
300
50
Figure 11. Output Admittance
I
C
, COLLECTOR CURRENT (mA)
h , OUTPUT ADMITTANCE ( mhos)
Figure 12. Input Impedance
I
C
, COLLECTOR CURRENT (mA)
Figure 13. Voltage Feedback Ratio
I
C
, COLLECTOR CURRENT (mA)
30
100
70
10
30
2.0
3.0
5.0
7.0
10
1.0
0.1 0.2 1.0 2.0
5.0
0.5
10
0.5
0.7
2.0
5.0
10
20
1.0
0.2
0.5
oe
h , VOLTAGE FEEDBACK RATIO (X 10 )
re
h , INPUT IMPEDANCE (k
ie
0.1 0.2 1.0 2.0
5.0 10
0.5
0.1 0.2 1.0 2.0
5.0 10
0.5
7.0
5.0
0.1 0.2 1.0 2.0
5.0 10
0.5
m
-4
h PARAMETERS
(V
CE
= −10 Vdc, f = 1.0 kHz, T
A
= 25°C)
50
20
Ω)
0.3 0.7 3.0
7.0
0.3
0.7 3.0 7.0
0.3
0.7
3.0
7.0
0.3 0.7 3.0
7.0
0.3 0.7 3.0
7.0
MMBT3906TT1
www.onsemi.com
6
STATIC CHARACTERISTICS
Figure 14. DC Current Gain
I
C
, COLLECTOR CURRENT (mA)
0.3
0.5
0.7
1.0
2.0
0.2
0.1
h , DC CURRENT GAIN (NORMALIZED)
0.5 2.0 3.0 10 50
70
0.2 0.3
0.1
100
1.00.7
200
30205.0 7.0
FE
V
CE
= 1.0 V
T
J
= +125°C
+25°C
-55°C
Figure 15. Collector Saturation Region
I
B
, BASE CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
0.1
V , COLLECTOR EMITTER VOLTAGE (VOLTS)
0.5 2.0 3.0 100.2 0.3
0
1.00.7 5.0 7.0
CE
I
C
= 1.0 mA
T
J
= 25°C
0.070.050.030.020.01
10 mA 30 mA 100 mA
Figure 16. “ON” Voltages
I
C
, COLLECTOR CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
Figure 17. Temperature Coefficients
I
C
, COLLECTOR CURRENT (mA)
V, VOLTAGE (VOLTS)
1.0 2.0 5.0 10 20
50
0
100
-0.5
0
0.5
1.0
0 60 80 120 140 160
180
20 40
100 200
-1.0
-1.5
-2.0
200
T
J
= 25°C
V
BE(sat)
@ I
C
/I
B
= 10
V
CE(sat)
@ I
C
/I
B
= 10
V
BE
@ V
CE
= 1.0 V
+25°C TO +125°C
-55°C TO +25°C
+25°C TO +125°C
-55°C TO +25°C
q
VC
FOR V
CE(sat)
q
VS
FOR V
BE(sat)
V
, TEMPERATURE COEFFICIENTS (mV/ C)°θ
P1-P3P4-P6P7-P7

NSVMMBT3906TT1G

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Buy NSVMMBT3906TT1G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT SMALL SIGNAL GENERAL
Lifecycle:
New from this manufacturer.
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