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IRG6B330UDPBF

P1-P3P4-P6P7-P7
www.irf.com 1
4/20/10
IRG6B330UDPbF
Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced
trench IGBT technology to achieve low V
CE(on)
and low E
PULSE
TM
rating per silicon area which improve panel
efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current
capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP
applications.
Features
l Advanced Trench IGBT Technology
l Optimized for Sustain and Energy Recovery
Circuits in PDP Applications
l Low V
CE(on)
and Energy per Pulse (E
PULSE
TM
)
for Improved Panel Efficiency
l High Repetitive Peak Current Capability
l Lead Free Package
PDP TRENCH IGBT
GC E
Gate Collector Em itter
TO-220AB
E
G
n-channel
C
PD - 96304
V
CE
min
330 V
V
CE(ON)
typ. @ I
C
= 70A
1.69 V
I
RP
max @ T
C
= 25°C
250
A
T
J
max
150 °C
Key Parameters
Absolute Maximum Ratings
Parameter Units
V
GE
Gate-to-Emitter Voltage V
I
C
@ T
C
= 25°C Continuous Collector Current, V
GE
@ 15V
A
I
C
@ T
C
= 100°C Continuous Collector, V
GE
@ 15V
I
RP
@ T
C
= 25°C
Repetitive Peak Current
P
D
@T
C
= 25°C
Power Dissipation W
P
D
@T
C
= 100°C
Power Dissipation
Linear Derating Factor W/°C
T
J
Operating Junction and °C
T
STG
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw N
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
(IGBT) Thermal Resistance Junction-to-Case-(each IGBT) ––– 0.80
R
θJC
(Diode) Thermal Resistance Junction-to-Case-(each Diode) 1.6 2.4
R
θ
CS
Case-to-Sink (flat, greased surface) 0.24 ––– °C/W
R
θ
JA
Junction-to-Ambient (typical socket mount) ––– 40
Weight 6.0 (0.21) ––– g (oz)
250
300
-40 to + 150
10lb in (1.1N m)
160
63
1.3
Max.
40
70
±30
E
C
G
IRG6B330UDPbF
2 www.irf.com
Notes:
Half sine wave with duty cycle = 0.1, ton=2µsec.
R
θ
is measured at T
J
of approximately 90°C.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BV
CES
Collector-to-Emitter Breakdown Voltage 330 ––– ––– V
∆Β
V
CES
/
∆
T
J
Breakdown Voltage Temp. Coefficient ––– 0.34 ––– V/°C
––– 1.18 1.48
––– 1.36 1.68
––– 1.69 2.09 V
––– 2.26 2.76
–––1.93–––
V
GE
(
th
)
Gate Threshold Voltage 2.6 ––– 5.0 V
∆V
GE
(
th
)
/∆T
J
Gate Threshold Voltage Coefficient ––– -11 ––– mV/°C
I
CES
Collector-to-Emitter Leakage Current ––– 2.0 25 µA
––– 5.0 –––
––– 100 –––
I
GES
Gate-to-Emitter Forward Leakage ––– ––– 100 nA
Gate-to-Emitter Reverse Leakage ––– ––– -100
g
fe
Forward Transconductance ––– 50 ––– S
Q
g
Total Gate Charge ––– 85 ––– nC
Q
gc
Gate-to-Collector Charge ––– 31 –––
t
d(on)
Turn-On dela
y
time — 47 — I
C
= 25A, V
CC
= 196V
t
r
Rise time — 37 — ns R
G
= 10Ω, L=200
µ
H, L
S
= 200nH
t
d(off)
Turn-Off dela
y
time — 176 — T
J
= 25°C
t
f
Fall time — 99 —
t
d(on)
Turn-On dela
y
time — 45 — I
C
= 25A, V
CC
= 196V
t
r
Rise time — 38 — ns R
G
= 10Ω, L=200
µ
H, L
S
= 200nH
t
d(off)
Turn-Off dela
y
time — 228 — T
J
= 150°C
t
f
Fall time —
183
—
t
st
Shoot Through Blocking Time 100 ––– ––– ns
E
PULSE
Energy per Pulse µJ
C
iss
Input Capacitance ––– 2297 –––
C
oss
Output Capacitance ––– 141 ––– pF
C
rss
Reverse Transfer Capacitance ––– 74 –––
L
C
Internal Collector Inductance ––– 5.0 ––– Between lead,
nH 6mm (0.25in.)
L
E
Internal Emitter Inductance ––– 13 ––– from package
Diode Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
I
F
(
AV
)
Average Forward Current at
T
C
=155°C
I
FSM
Non Repetitive Peak Surge Current ––– ––– 100 A
T
J
= 155°C, PW = 6.0ms half sine wave
V
F
Forward Voltage ––– 1.19 1.3 V
––– 0.94 1.0
t
rr
Reverse Recovery Time ––– 35 60 ns
–––43–––
T
J
= 25°C
–––67–––
T
J
= 125°C I
F
= 8A
Q
r
r
Reverse Recovery Charge ––– 60 ––– nC
T
J
= 25°C
di/dt = 200A/µs
––– 210 –––
T
J
= 125°C V
R
= 200V
I
rr
Peak Recovery Current ––– 2.8 ––– A
T
J
= 25°C
––– 6.3 –––
T
J
= 125°C
Static Collector-to-Emitter Voltage
V
CE(on)
V
GE
= 15V, I
CE
= 70A, T
J
= 150°C
––– 834 –––
V
CE
= V
GE
, I
CE
= 500
A
V
CE
= 330V, V
GE
= 0V
V
CE
= 330V, V
GE
= 0V, T
J
= 150°C
––– 985 –––
V
CE
= 25V, I
CE
= 25A
V
CE
= 200V, I
C
= 25A, V
GE
= 15V
V
CC
= 240V, V
GE
= 15V, R
G
= 5.1
Ω
V
CC
= 240V, R
G
= 5.1
Ω,
T
J
= 25°C
L = 220nH, C= 0.40µF, V
GE
= 15V
V
CC
= 240V, R
G
= 5.1
Ω,
T
J
= 100°C
and center of die contact
V
GE
= 30V
V
GE
= -30V
ƒ = 1.0MHz, See Fig.13
V
GE
= 0V
L = 220nH, C= 0.40µF, V
GE
= 15V
Conditions
V
GE
= 0V, I
CE
= 1 mA
Reference to 25°C, I
CE
= 1mA
V
GE
= 15V, I
CE
= 120A
V
GE
= 15V, I
CE
= 25A
V
GE
= 15V, I
CE
= 70A
V
GE
= 15V, I
CE
= 40A
V
CE
= 330V, V
GE
= 0V, T
J
= 100°C
I
F
= 8A
I
F
= 8A, T
J
= 150°C
I
F
= 1A, di/dt = -50A/µs, V
R
=30V
V
CE
= 30V
Conditions
––– ––– 8.0 A
IRG6B330UDPbF
www.irf.com 3
Fig 1. Typical Output Characteristics @ 25°C
Fig 3. Typical Output Characteristics @ 125°C
Fig 4. Typical Output Characteristics @ 150°C
Fig 2. Typical Output Characteristics @ 75°C
Fig 5. Typical Transfer Characteristics
Fig 6. V
CE(ON)
vs. Gate Voltage
0481216
V
CE
(V)
0
40
80
120
160
200
I
C
E
(
A
)
V
GE
= 18V
V
GE
= 15V
V
GE
= 12V
V
GE
= 10V
V
GE
= 8.0V
V
GE
= 6.0V
0481216
V
CE
(V)
0
40
80
120
160
200
I
C
E
(
A
)
V
GE
= 18V
V
GE
= 15V
V
GE
= 12V
V
GE
= 10V
V
GE
= 8.0V
V
GE
= 6.0V
0481216
V
CE
(V)
0
40
80
120
160
200
I
C
E
(
A
)
V
GE
= 18V
V
GE
= 15V
V
GE
= 12V
V
GE
= 10V
V
GE
= 8.0V
V
GE
= 6.0V
0 4 8 12 16
V
CE
(V)
0
40
80
120
160
200
I
C
E
(
A
)
V
GE
= 18V
V
GE
= 15V
V
GE
= 12V
V
GE
= 10V
V
GE
= 8.0V
V
GE
= 6.0V
2 4 6 8 10 12 14 16
V
GE
(V)
0
50
100
150
200
250
300
I
C
E
(
A
)
T
J
= 25°C
T
J
= 150°C
0 5 10 15 20
V
GE
(V)
0
2
4
6
8
10
12
14
V
C
E
(
V
)
T
J
= 25°C
T
J
= 150°C
I
C
= 25A
P1-P3P4-P6P7-P7

IRG6B330UDPBF

Mfr. #:
Buy IRG6B330UDPBF
Manufacturer:
Infineon / IR
Description:
IGBT Transistors IGBT DISCRETES
Lifecycle:
New from this manufacturer.
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