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IRG6B330UDPBF

P1-P3P4-P6P7-P7
IRG6B330UDPbF
4 www.irf.com
Fig 7. Maximum Collector Current vs. Case Temperature
Fig 8. Typical Repetitive Peak Current vs. Case Temperature
Fig 10. Typical E
PULSE
vs. Collector-to-Emitter Voltage
Fig 9. Typical E
PULSE
vs. Collector Current
Fig 11. E
PULSE
vs. Temperature
Fig 12. Forward Bias Safe Operating Area
0 25 50 75 100 125 150
T
C
,
Case Temperature (°C)
0
10
20
30
40
50
60
70
80
I
C
,
C
o
l
l
e
c
t
o
r
C
u
r
r
e
n
t
(
A
)
170 180 190 200 210 220 230 240
I
C
, Peak Collector Current (A)
400
500
600
700
800
900
1000
E
n
e
r
g
y
p
e
r
P
u
l
s
e
(
µ
J
)
V
CC
= 240V
L = 220nH
C = variable
100°C
25°C
25 50 75 100 125 150
T
J
, Temperature (ºC)
200
400
600
800
1000
1200
1400
E
n
e
r
g
y
p
e
r
P
u
l
s
e
(
µ
J
)
V
CC
= 240V
L = 220nH
t = 1µs half sine
C= 0.4µF
C= 0.3µF
C= 0.2µF
180 190 200 210 220 230 240
V
CE,
Collector-to-Emitter Voltage (V)
400
500
600
700
800
900
1000
E
n
e
r
g
y
p
e
r
P
u
l
s
e
(
µ
J
)
L = 220nH
C = 0.4µF
100°C
25°C
25 50 75 100 125 150
Case Temperature (°C)
0
100
200
300
R
e
p
e
t
i
t
i
v
e
P
e
a
k
C
u
r
r
e
n
t
(
A
)
ton= 2µs
Duty cycle = 0.1
Half Sine Wave
1 10 100 1000
V
CE
(V)
1
10
100
1000
I
C
(
A
)
10 µs
100 µs
1ms
IRG6B330UDPbF
www.irf.com 5
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case (IGBT)
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t
1
, Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
C
)
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W) τi (sec)
0.146 0.000131
0.382 0.001707
0.271 0.014532
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
τ
3
τ
3
R
1
R
1
R
2
R
2
R
3
R
3
τ
τ
C
Ci i/Ri
Ci= τi/Ri
Fig 13. Typical Capacitance vs. Collector-to-Emitter Voltage Fig 14. Typical Gate Charge vs. Gate-to-Emitter Voltage
Fig 16. Maximum Effective Transient Thermal Impedance, Junction-to-Case (DIODE)
0 100 200 300
V
CE
(V)
10
100
1000
10000
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Cies
Coes
Cres
0 20 40 60 80 100 120
Q
G
Total Gate Charge (nC)
0
5
10
15
20
25
V
G
E
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 240V
VDS= 200V
VDS= 150V
I
D
= 25A
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t
1
, Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
C
)
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W)
τι
(sec)
0.07854 0.000637
0.829201 0.000532
1.002895 0.003412
0.490875 0.055432
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
τ
3
τ
3
R
1
R
1
R
2
R
2
R
3
R
3
Ci
i
/
Ri
Ci= τi
/
Ri
τ
τ
C
τ
4
τ
4
R
4
R
4
IRG6B330UDPbF
6 www.irf.com
Fig. 17 - Typical Forward Voltage Drop Characteristics
Fig. 19- Typical Stored Charge vs. di
F
/dt
Fig. 18 - Typical Reverse Recovery vs. di
F
/dt
Fig 21a. t
st
and E
PULSE
Test Circuit
Fig 21b. t
st
Test Waveforms
Fig 21c. E
PULSE
Test Waveforms
1K
VCC
DUT
0
L
Fig. 22 - Gate Charge Circuit (turn-off)
DRIVER
DUT
L
C
VCC
RG
RG
B
A
Ipulse
Energy
V
CE
I
C
Current
PULSE A
PULSE B
t
ST
Fig.20 - Switching Loss Circuit
100 1000
di
f
/ dt - (A / µs)
20
30
40
50
60
70
80
90
t
r
r
-
(
n
s
)
I
F
= 8.0A, T
J
=125°C
I
F
= 8.0A, T
J
=25°C
0.0 0.5 1.0 1.5 2.0 2.5
V
FM
, Forward Voltage Drop (V)
0.1
1
10
100
I
F
,
I
n
s
t
a
n
t
a
n
e
o
u
s
F
o
r
w
a
r
d
C
u
r
r
e
n
t
(
A
)
Tj = 150°C
Tj = 25°C
100 1000
di
f
/ dt - (A / µs)
0
100
200
300
400
Q
r
r
-
(
n
s
)
I
F
= 8.0A, T
J
=125°C
I
F
= 8.0A, T
J
=25°C
P1-P3P4-P6P7-P7

IRG6B330UDPBF

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Buy IRG6B330UDPBF
Manufacturer:
Infineon / IR
Description:
IGBT Transistors IGBT DISCRETES
Lifecycle:
New from this manufacturer.
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