MAX8650
4.5V to 28V Input Current-Mode Step-Down
Controller with Adjustable Frequency
______________________________________________________________________________________ 19
The DC resistance of the inductor’s copper wire has a
+0.22%/°C temperature coefficient.
To use the DC resistance of the output inductor for cur-
rent sensing, an RC circuit is added (see Figure 8). The
RC time constant is set at twice the inductor (L/R
DC
) time
constant. Pick the value of C9 (typically 0.47µF), then cal-
culate the resistor value from R4 = 2L / (R
DC
x C9).
Add a resistor (R5 in Figure 8) to the CS- connection to
minimize input offset error. Calculate the value of R5 as
follows:
1) When V
OUT
2.4V:
2) When V
OUT
< 2.4V:
Capacitor C13 is connected in parallel with R5 and is
equal in value to C9.
The equivalent current-sense resistance when using an
inductor for current sensing is equal to the DC resis-
tance of the inductor (R
DC
).
MOSFET Selection
The MAX8650 drives two or four external, logic-level, n-
channel MOSFETs as the circuit switch elements. The
key selection parameters are:
1) On-resistance (R
DS(ON)
): the lower, the better.
2) Maximum drain-to-source voltage (V
DSS
): should
be at least 20% higher than the input supply rail at
the high-side MOSFET’s drain.
3) Gate charges (Q
G
, Q
GD
, Q
GS
): the lower, the better.
For a 5V input application, choose the MOSFETs with
rated R
DS(ON)
at V
GS
4.5V. With higher input volt-
ages, the internal VL regulator provides 6.5V for gate
drive to minimize the on-resistance for a wide range of
MOSFETs.
For a good compromise between efficiency and cost,
choose the high-side MOSFET (N1, N2) that has con-
duction losses equal to switching losses at nominal
input voltage and output current. The selected low-side
MOSFET (N3, N4) must have an R
DS(ON)
that satisfies
the current-limit-setting condition above. Make sure that
the low-side MOSFET does not spuriously turn on due
to dV/dt caused by the high-side MOSFET turning on,
as this would result in shoot-through current and
degrade the efficiency. MOSFETs with a lower
Q
GD
/Q
GS
ratio have higher immunity to dV/dt. For high-
current applications, it is often preferable to parallel two
MOSFETs rather than to use a single large MOSFET.
For proper thermal-management design, the power dis-
sipation must be calculated at the desired maximum
operating junction temperature, maximum output cur-
rent, and worst-case input voltage (for the low-side
MOSFET, worst case is at V
IN(MAX)
; for the high-side
MOSFET, it could be either at V
IN(MAX)
or V
IN(MIN)
).
The high-side and low-side MOSFETs have different
loss components due to the circuit operation. The low-
side MOSFET operates as a zero voltage switch; there-
fore, major losses are the channel-conduction loss
(P
LSCC
) and the body-diode conduction loss (P
LSDC
).
R
AxR
A
RA
k
ILIM
5
15 4
15
10
32
1
=
+
×
μ
μ
μ
Ω
R
A
RA
k
R
A
ILIM
5
20
10
32
4
20
1
=
+
×
Ω
×μ
μ
μ
MAX8650
CS-
LX
R4
R5 C13
L1
C9
CS+
V
OUT
Figure 8. Current Sense Using the Inductor’s DC Resistance
MAX8650
CS-
LX
R4
R5
C13
L1
C9
CS+
V
OUT
R3
Figure 9. Using a Current-Sense Resistor for Improved Current-
Sense Accuracy
MAX8650
4.5V to 28V Input Current-Mode Step-Down
Controller with Adjustable Frequency
20 ______________________________________________________________________________________
Use R
DS(ON)
at T
J(MAX)
:
where V
F
is the body-diode forward-voltage drop, t
DT
is
the dead time between high-side and low-side switching
transitions (30ns typ), and f
S
is the switching frequency.
The high-side MOSFET operates as a duty-cycle con-
trol switch and has the following major losses: the
channel-conduction loss (P
HSCC
), the VL overlapping
switching loss (P
HSSW
), and the drive loss (P
HSDR
).
The high-side MOSFET does not have body-diode con-
duction loss, unless the converter is sinking current,
when the loss due to body-diode conduction is calcu-
lated as P
HSDC
= 2 x I
LOAD
x V
F
x t
DT
x f
S
:
Use R
DS(ON)
at T
J(MAX)
:
where I
GATE
is the average DH driver output-current
capability determined by:
where R
DS(ON)(DR)
is the high-side MOSFET driver’s
on-resistance (1.5Ω typ) and R
GATE
is the internal gate
resistance of the MOSFET (~2Ω):
where V
GS
V
VL.
In addition to the losses above, allow approximately
20% more for additional losses due to MOSFET output
capacitances and low-side MOSFET body-diode
reverse-recovery charge dissipated in the high-side
MOSFET, but is not well defined in the MOSFET data
sheet. Refer to the MOSFET data sheet for thermal-
resistance specifications to calculate the PCB area
needed to maintain the desired maximum operating
junction temperature with the above calculated power
dissipations.
To reduce EMI caused by switching noise, add a 0.1µF
ceramic capacitor from the high-side switch drain to
the low-side switch source or add resistors in series
with DH and DL to slow down the switching transitions.
However, adding series resistors increases the power
dissipation of the MOSFET, so ensure this does not
overheat the MOSFET.
Input Capacitor
The input filter capacitor reduces peak currents drawn
from the power source and reduces noise and voltage
ripple on the input caused by the circuit’s switching.
The input capacitor must meet the ripple-current
requirement (I
RMS
) imposed by the switching currents
defined by the following equation:
I
RMS
has a maximum value when the input voltage
equals twice the output voltage (V
IN
= 2 x V
OUT
), so
I
RMS(MAX)
= I
LOAD
/ 2. Ceramic capacitors are recom-
mended due to their low ESR and ESL at high frequen-
cy with relatively low cost. Choose a capacitor that
exhibits less than 10°C temperature rise at the maxi-
mum operating RMS current for optimum long-term reli-
ability. Ceramic capacitors with X5R or better
temperature characteristics are recommended.
Output Capacitor
The key selection parameters for the output capacitor
are the actual capacitance value, the equivalent series
resistance (ESR), the equivalent series inductance
(ESL), and the voltage-rating requirements. These
parameters affect the overall stability, output voltage
ripple, and transient response. The output ripple has
three components: variations in the charge stored in
the output capacitor, the voltage drop across the
capacitor’s ESR and ESL caused by the current into
and out of the capacitor. The maximum output voltage
ripple is estimated as follows:
V
RIPPLE
= V
RIPPLE(ESR)
+ V
RIPPLE(C)
+ V
RIPPLE(ESL)
The output voltage ripple as a consequence of the
ESR, ESL, and output capacitance is:
V
V
L ESL
ESL
RIPPLE ESL
IN
()
=
+
×
V I ESR
RIPPLE ESR P P()
I
IVVV
V
RMS
LOAD OUT IN OUT
IN
=
×−
()
PQVf
R
RR
HSDR G GS S
GATE
GATE DS ON DR
××
+
()()
I
V
RR
GATE
VL
DS ON DR GATE
×
+
05.
()()
PVI
QQ
I
f
HSSW IN LOAD
GS GD
GATE
S
×
+
×
P
V
V
IR
HSCC
OUT
IN
LOAD
DS ON
×
2
()
PIVtf
LSDC LOAD F DT S
× × ×2
P
V
V
IR
LSCC
OUT
IN
LOAD
DS ON
=−
××1
2
()
MAX8650
4.5V to 28V Input Current-Mode Step-Down
Controller with Adjustable Frequency
______________________________________________________________________________________ 21
where I
P-P
is the peak-to-peak inductor current:
These equations are suitable for initial capacitor selec-
tion, but final values should be chosen based on a proto-
type or evaluation circuit. As a general rule, a smaller
current ripple results in less output-voltage ripple. Since
the inductor ripple current is a factor of the inductor
value and input voltage, the output-voltage ripple
decreases with larger inductance, and increases with
higher input voltages. Ceramic, tantalum, or aluminum
polymer electrolytic capacitors are recommended. The
aluminum electrolytic capacitor is the least expensive;
however, it has higher ESR. To compensate for this, use
a ceramic capacitor in parallel to reduce the switching
ripple and noise. For reliable and safe operation, ensure
that the capacitor’s voltage and ripple-current ratings
exceed the calculated values.
The response to a load transient depends on the
selected output capacitors. After a load transient, the
output voltage instantly changes by ESR x ΔI
LOAD
.
Before the controller can respond, the output voltage
deviates further, depending on the inductor and output-
capacitor values. After a short period (see the
Typical
Operating Characteristics
), the controller responds by
regulating the output voltage back to its nominal state.
The controller response time depends on its closed-
loop bandwidth. With a higher bandwidth, the response
time is faster, thus preventing the output voltage from
further deviation from its regulating value.
Compensation Design
The MAX8650 uses an internal transconductance error
amplifier whose output compensates the control loop.
The external inductor, output capacitor, compensation
resistor, and compensation capacitors determine the
loop stability. The inductor and output capacitor are
chosen based on performance, size, and cost.
Additionally, the compensation resistor and capacitors
are selected to optimize control-loop stability. The com-
ponent values, shown in the circuits of Figures 3 and 4,
yield stable operation over the given range of input-to-
output voltages.
The controller uses a current-mode control scheme that
regulates the output voltage by forcing the required cur-
rent through the external inductor, so the MAX8650 uses
the voltage drop across the DC resistance of the induc-
tor or the alternate series current-sense resistor to mea-
sure the inductor current. Current-mode control elimi-
nates the double pole in the feedback loop caused by
the inductor and output capacitor resulting in a smaller
phase shift and requiring a less elaborate error-amplifier
compensation than voltage-mode control. A simple sin-
gle-series R
C
and C
C
is all that is needed to have a sta-
ble, high-bandwidth loop in applications where ceramic
capacitors are used for output filtering. For other types
of capacitors, due to the higher capacitance and ESR,
the frequency of the zero created by the capacitance
and ESR is lower than the desired closed-loop
crossover frequency. To stabilize a nonceramic output
capacitor loop, add another compensation capacitor
from COMP to GND to cancel this ESR zero.
The basic regulator loop is modeled as a power modu-
lator, an output feedback-divider, and an error amplifi-
er. The power modulator has DC gain set by g
mc
x
R
LOAD
, with a pole and zero pair set by R
LOAD
, the out-
put capacitor (C
OUT
), and its ESR. Below are equations
that define the power modulator:
where R
LOAD
= V
OUT
/ I
OUT(MAX)
, f
S
is the switching
frequency, L is the output inductance, and g
mc
= 1 /
(A
VCS
x R
DC
), where A
VCS
is the gain of the current-
sense amplifier (12 typ), and R
DC
is the DC resistance
of the inductor.
Find the pole and zero frequencies created by the
power modulator as follows:
When C
OUT
comprises “n” identical capacitors in paral-
lel, the resulting C
OUT
= n x C
OUT(EACH)
, and ESR =
ESR
(EACH)
/ n. Note that the capacitor zero for a paral-
lel combination of like capacitors is the same as for an
individual capacitor. See Figures 10 and 11 for illustra-
tions of the pole and zero locations.
The feedback voltage-divider has a gain of G
FB
= V
FB
/
V
OUT
, where V
FB
is equal to 0.75V.
f
C ESR
zMOD
OUT
=
××
1
2π
f
C
RfL
RfL
ESR
pMOD
OUT
LOAD S
LOAD S
=
××
××
+
1
2π
Gg
RfL
RfL
MOD dc mc
LOAD S
LOAD S
()
××
I
VV
fL
V
V
PP
IN OUT
S
OUT
IN
=
×
×
V
I
Cf
RIPPLE C
PP
OUT S
()
=
××
8

MAX8650EEG+

Mfr. #:
Manufacturer:
Maxim Integrated
Description:
Switching Controllers 4.5-28V Current-Mode Step-Down Controller
Lifecycle:
New from this manufacturer.
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