© Semiconductor Components Industries, LLC, 2009
March, 2009 − Rev. 3
1 Publication Order Number:
NTMFS4839NH/D
NTMFS4839NH
Power MOSFET
30 V, 64 A, Single N−Channel, SO−8FL
Features
• Low R
DS(ON)
to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• Low R
G
• These are Pb−Free Devices*
Applications
• Refer to Application Note AND8195/D
• CPU Power Delivery
• DC−DC Converters
MAXIMUM RATINGS (T
J
= 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage V
DSS
30 V
Gate−to−Source Voltage V
GS
±20 V
Continuous Drain
Current R
q
JA
(Note 1)
Steady
State
T
A
= 25°C
T
A
= 85°C
I
D
15
11
A
Power Dissipation
R
q
JA
(Note 1)
T
A
= 25°C
T
A
= 85°C
P
D
2.17
1.13
W
Continuous Drain
Current R
q
JA
−
tv10 sec
T
A
= 25°C
T
A
= 85°C
I
D
24
17
A
Power Dissipation
R
q
JA
tv10 sec
T
A
= 25°C
T
A
= 85°C
P
D
5.7
2.9
W
Continuous Drain
Current R
q
JA
(Note 2)
T
A
= 25°C
T
A
= 85°C
I
D
9.5
7.0
A
Power Dissipation
R
q
JA
(Note 2)
T
A
= 25°C
T
A
= 85°C
P
D
0.87
0.45
W
Continuous Drain
Current R
q
JC
(Note 1)
T
C
= 25°C
T
C
= 85°C
I
D
64
46
A
Power Dissipation
R
q
JC
(Note 1)
T
C
= 25°C
T
C
= 25°C
P
D
42.4
22
W
Pulsed Drain
Current
T
A
= 25°C,
t
p
= 10 ms
I
DM
192 A
Operating Junction and Storage
Temperature
T
J
,
T
STG
−55 to
+150
°C
Source Current (Body Diode) I
S
35 A
Drain to Source dV/dt dV/dt 6 V/ns
Single Pulse Drain−to−Source Avalanche
Energy (T
J
= 25°C, V
DD
= 24 V, V
GS
= 10 V,
I
L
= 27 A, L = 0.3 mH, R
G
= 25 W)
EAS 109 mJ
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
L
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
MARKING
DIAGRAM
http://onsemi.com
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
4839NH
AYWWG
G
1
V
(BR)DSS
R
DS(ON)
MAX I
D
MAX
30 V
5.5 mW @ 10 V
64 A
10.3 mW @ 4.5 V
G (4)
S (1,2,3)
N−CHANNEL MOSFET
D (5,6)
Device Package Shipping
†
ORDERING INFORMATION
NTMFS4839NHT1G SO−8FL
(Pb−Free)
1500 /
Tape & Reel
NTMFS4839NHT3G SO−8FL
(Pb−Free)
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
S
S
S
G
D
D
D
D
