NTMFS4839NHT3G

NTMFS4839NH
http://onsemi.com
4
0
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
012345
Figure 1. OnRegion Characteristics
V
DS
, DRAINTOSOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
V
GS
= 3.2 V
3.8 V
4.0 V
4.2 V
4.4 V
3.6 V
3.4 V
T
J
= 25°C
4.6 V
4.8 V
5.0 V
7.0 V
10 V
0
10
20
30
40
50
60
70
80
1234567
I
D
, DRAIN CURRENT (A)
V
GS
, GATETOSOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
T
C
= 25°C
T
C
= 55°C
T
C
= 125°C
0.002
0.003
0.004
0.005
0.006
0.007
0.008
0.009
0.01
0.011
0.012
0.013
0.014
0.015
0.016
0.017
0.018
0.019
0.02
3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 11
R
DS(on)
, DRAINTOSOURCE RESISTANCE (W)
V
GS
, GATETOSOURCE VOLTAGE (V)
Figure 3. OnResistance versus
GatetoSource Voltage
I
D
= 30 A
T
J
= 25°C
0.001
0.0015
0.002
0.0025
0.003
0.0035
0.004
0.0045
0.005
0.0055
0.006
0.0065
0.007
0.0075
0.008
0.0085
0.009
0.0095
0.01
0.0105
0.011
0.0115
0.012
10 15 20 25 30 35 40 45 50
V
GS
= 11.5 V
V
GS
= 4.5 V
I
D
, DRAIN CURRENT (A)
Figure 4. OnResistance versus Drain Current
and Gate Voltage
R
DS(on)
, DRAINTOSOURCE RESISTANCE (W)
0.6
0.8
1
1.2
1.4
1.6
1.8
55 35 15 5 25 45 65 85 105 125 145
Figure 5. OnResistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
R
DS(on)
, DRAINTOSOURCE RESISTANCE
(NORMALIZED)
I
D
= 30 A
V
GS
= 10 V
0.1
1
10
100
1000
10000
5 1015202530
55 35 15 5 25 45 65 85 105 125 145 5 10 15 20 25 30
Figure 6. DraintoSource Leakage Current
versus Voltage
V
DS
, DRAINTOSOURCE VOLTAGE (V)
I
DSS
, LEAKAGE (nA)
V
GS
= 0 V
T
J
= 150°C
T
J
= 125°C
T
J
= 25°C
NTMFS4839NH
http://onsemi.com
5
0
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
2400
15 10 50 5 10152025
GATETOSOURCE OR DRAINTOSOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
C, CAPACITANCE (pF)
C
ISS
C
OSS
T
J
= 25°C
C
RSS
0
1.5
3
4.5
6
7.5
9
10.5
12
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28
Q
GS
V
DD
= 15 V
V
GS
= 0 V 11.5 V
I
D
= 30 A
T
J
= 25°C
Q
T
Q
g
, TOTAL GATE CHARGE (nC)
V
GS,
GATETOSOURCE VOLTAGE (V)
Figure 8. GatetoSource and DraintoSource
Voltage vs. Total Gate Charge
Q
GD
1
10
100
1 10 100
t
r
t
d(off)
t
d(on)
t
f
V
DS
= 15 V
I
D
= 15 A
V
GS
= 11.5 V
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
R
G
, GATE RESISTANCE (W)
t, TIME (ns)
0
5
10
15
20
25
30
0.5 0.6 0.7 0.8 0.9 1.0
Figure 10. Diode Forward Voltage versus
Current
V
SD
, SOURCETODRAIN VOLTAGE (V)
I
S
, SOURCE CURRENT (A)
T
J
= 25°C
V
GS
= 0 V
1
10
100
1000
0.1 1 10 100
100 ms
1 ms
10 ms
dc
R
DS(on)
Limit
Thermal Limit
Package Limit
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
V
DS
, DRAINTOSOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
V
GS
= 20 V
Single Pulse
T
C
= 25°C
10 ms
0
10
20
30
40
50
60
70
80
90
100
110
25 50 75 100 125 150 175
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
T
J
, STARTING JUNCTION TEMPERATURE (°C)
EAS, SINGLE PULSE DRAINTOSOURCE
AVALANCHE ENERGY (mJ)
I
D
= 27 A
NTMFS4839NH
http://onsemi.com
6
0
10
20
30
40
50
60
70
80
0 20406080100
V
DS
= 1.5 V
DRAIN CURRENT (A)
g
FS,
(S)
Figure 13. G
FS
versus Drain Current

NTMFS4839NHT3G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
MOSFET NFET S08FL 30V 66A 5.5MO
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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