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LFTVS18-1F3

P1-P3P4-P6P7-P8
This is information on a product in full production.
September 2012 Doc ID 14608 Rev 3 1/8
8
LFTVS18-1F3
Low forward voltage Transil™, transient voltage suppressor
Datasheet production data
Features
■ Strong ESD and EOS protection
■ Very low clamping factor V
CL
/V
BR
■
Unidirectional device
■ Fast response time
■ Very thin package
■ Very small PCB area
■ RoHS compliant
Complies with the following standards:
■ IEC 61000-4-2 level 4
–
±15 kV (air discharge)
–
±8 kV (contact discharge)
Description
The LFTVS18-1F3 is a single line diode designed
specifically for the protection of integrated circuits
in portable equipment and miniaturized
electronics devices subject to ESD and EOS
transient overvoltages.
Figure 1. Pin configuration (bump side)
Figure 2. Device configuration
TM: Transil is a trademark of STMicroelectronics
Flip Chip
(4 bumps)
B
1
2
A
A1 and A2
B1 and B2
www.st.com
Characteristics LFTVS18-1F3
2/8 Doc ID 14608 Rev 3
1 Characteristics
Figure 3. Electrical characteristics - definitions
Table 1. Absolute maximum ratings (T
amb
= 25 °C)
Symbol Parameter Test condition Value Unit
P
PP
Peak pulse power dissipation
(8/20 µs pulse)
T
j
initial = T
amb
350 W
I
FSM
Non repetitive surge peak forward
current
t
p
= 10 ms, T
j
initial = T
amb
5A
T
j
Maximum operating junction temperature 125 °C
T
stg
Storage temperature range -55 to +150 °C
Table 2. Electrical characteristics - values (T
amb
= 25 °C)
Symbol Test conditions Min. Typ. Max. Unit
V
BR
I
R
= 1 mA 16 V
I
RM
V
RM
= 12 V 250 nA
V
CL
I
PP
= 1 A
(1)
1. 8 / 20 µs pulse waveform
19 V
V
F
I
F
= 850 mA 1.3 V
C
line
V
R
= 0 V, V
OSC
= 30 mV, F = 1 MHz 175 pF
Symbol Parameter
V = Breakdown voltage
I = Leakage current @ V
V = Stand-off voltage
V = Clamping voltage
I = Peak pulse current
BR
RM RM
RM
CL
PP
V
I
V
CL
V
BR
V
RM
I
F
V
F
I
RM
I
PP
Slope: 1/R
d
I = Forward current
F
V = Forward voltage
F
R = Dynamic resistance
d
LFTVS18-1F3 Characteristics
Doc ID 14608 Rev 3 3/8
Figure 4. Peak pulse power versus initial
junction temperature
(pulse 8/20 µs)
Figure 5. Peak pulse power versus initial
junction temperature
(pulse 10/1000 µs)
P (W)
PP
0.0
200.0
400.0
600.0
800.0
1000.0
0 25 50 75 100 125 150
T (°C)
j
P (W)
PP
0.0
40.0
80.0
120.0
160.0
200.0
0 25 50 75 100 125 150
T (°C)
j
Figure 6. Peak pulse power versus
exponential pulse duration
Figure 7. Clamping voltage versus peak
pulse current (8/20 µs, typical
values)
Figure 8. Leakage current versus junction
temperature (typical values)
Figure 9. Forward voltage drop versus peak
forward current (typical values)
P (W)
PP
10
100
1000
10000
1 10 100 1000
T
j
initial = 25 °C
t (µs)
p
I (A)
PP
0.1
1.0
10.0
100.0
14 15 16 17 18 19 20 21 22 23 24 25 26 27
8/20µs
-30°C
25°C
85°C
125°C
V (V)
CL
I
R (nA)
0.1
1.0
10.0
25 50 75 100 125
V
R
=12V
T (°C)
j
I (A)
FM
0.0001
0.001
0.01
0.1
1
10
100
0.0 0.5 1.0 1.5 2.0 2.5 3.0
-30°C
25°C
85°C
125°C
V (V)
FM
P1-P3P4-P6P7-P8

LFTVS18-1F3

Mfr. #:
Buy LFTVS18-1F3
Manufacturer:
STMicroelectronics
Description:
TVS Diodes / ESD Suppressors LO FWD TRANS VLT TRANSIL
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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