Characteristics LFTVS18-1F3
4/8 Doc ID 14608 Rev 3
Figure 10. Junction capacitance versus line
voltage (typical values)
Figure 11. Junction capacitance versus
frequency for different bias
voltages (P = -12 dBm)
Capacitance(pF)
0
50
100
150
200
0123456789101112
F=1 MHz
V
OSC
=30mV
RMS
Vr=0 à 12V
T
J
=25°C
Voltage(V)
1M 3M 10M 30M 100M
0
20
40
60
80
100
120
140
160
180
200
F (Hz)
0.0V 2.0V
4.0V 6.0V
8.0V 10.0V
12.0V 14.0V
Capacitance(pF)
Figure 12. Breakdown voltage versus initial
junction temperature (typical value)
Figure 13. S21 insertion losses versus
frequency response
Figure 14. ESD response to IEC 61000-4-2
(+8 kV contact discharge)
Figure 15. ESD response to IEC 61000-4-2
(-8 kV contact discharge)
V (V)
BR
16
17
18
19
-50 -25 0 25 50 75 100 125 150
Vbr @ 1mA
(-30°C to 125°C)
T (° C)
j
100k 1M 10M 100M 1G
-60
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
F/Hz
S21 (dB)
IEC61000-4-2: +8kV contact discharge
Voltage/Division: 10V
Time/Division: 20ns
Vpp@ peak: 27.5V
Vpp@ 100ns: 18.6V
IEC61000-4-2: -8kV contact discharge
Voltage/Division: 5V
Time/Division: 20ns
Vpp@ peak: -11.3V
Vpp@ 100ns: -1.4V
