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AL5801EV1

P1-P3P4-P6P7-P9P10-P11
AL5801
Document number: DS35555 Rev. 3 - 2
1 of 11
www.diodes.com
July 2012
© Diodes Incorporated
A
L5801
100V, ADJUSTABLE CURRENT SINK LINEAR LED DRIVER
Description
The AL5801 combines a 100V N-channel MOSFET with a pre-
biased NPN transistor to make a simple, small footprint LED driver.
The LED current is set by an external resistor connected from R
EXT
pin (4) to GND pin (6). The internal pre-biased transistor develops
approximately 0.56V across the external resistor.
The AL5801 open-drain output can operate from 1.1V to 100V
enabling it to operate 5V to 100V power supplies without additional
components.
PWM dimming of the LED current can be achieved by driving the
BIAS pin (1) with an external, open-collector NPN transistor or
open-drain N-channel MOSFET.
The AL5801 is available in a SOT26 package and is ideal for driving
LED currents up to 350mA.
Features
• Feedback Pin Reference Voltage V
RSET
= 0.56V at +25°C
• -40°C to +125°C Temperature Range
• 1.1V to 100V Open-Drain Output
• Negative temperature V
RSET
co-efficient automatically reduces
the LED current at high temperatures
• Low thermal impedance SOT26 package with copper lead
frame
• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Pin Assignments
(Top View)
SOT26
Applications
• Linear LED Drivers
• LED Signs
• Offline LED Luminaries
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl)
and <1000ppm antimony compounds.
Typical Applications Circuit
AL5801
Document number: DS35555 Rev. 3 - 2
2 of 11
www.diodes.com
July 2012
© Diodes Incorporated
A
L5801
Pin Descriptions
Pin
Number
Pin
Name
Function
1 BIAS Biases the open-Drain output MOSFET
2 FB Feedback pin
3 OUT Open-Drain LED driver output
4 R
EXT
Current sense pin. LED current sensing resistor should be connected from here to GND
5 COMP
Compensation pin. Connect COMP pin to REXT pin and insert a 1nF ceramic capacitor from COMP
pin to FB pin for improved transient stability
6 GND Ground reference point for setting the LED current
Functional Block Diagram
Figure 1 Block Diagram
Absolute Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Symbol Characteristics Values Unit
V
OUT
Output voltage relative to GND 100 V
V
BIAS
BIAS voltage relative to GND (Note 4) 20 V
V
FB
FB voltage relative to GND 6 V
V
COMP
COMP voltage relative to GND 6 V
V
REXT
REXT voltage relative to GND 6 V
I
OUT
Output current 350 mA
T
J
Operating junction temperature -40 to +150 °C
T
ST
Storage temperature -55 to +150 °C
Note: 4. With pins 5 and 6 connected together.
These are stress ratings only. Operation outside the absolute maximum ratings may cause device failure.
Operation at the absolute maximum rating for extended periods may reduce device reliability.
AL5801
Document number: DS35555 Rev. 3 - 2
3 of 11
www.diodes.com
July 2012
© Diodes Incorporated
A
L5801
Package Thermal Data
Characteristic Symbol Value Unit
Power Dissipation (Note 5) @ T
A
= +25°C
P
D
0.75
W
Power Dissipation (Note 6) @ T
A
= +25°C
0.70
Power Dissipation (Note 7) @ T
A
= +25°C
0.85
Power Dissipation (Note 8) @ T
A
= +25°C
1.05
Thermal Resistance, Junction to Ambient Air (Note 5) @ T
A
= +25°C
R
θ
JA
165
°C/W
Thermal Resistance, Junction to Ambient Air (Note 6) @ T
A
= +25°C
180
Thermal Resistance, Junction to Ambient Air (Note 7) @ T
A
= +25°C
145
Thermal Resistance, Junction to Ambient Air (Note 8) @ T
A
= +25°C
120
Notes: 5. Device mounted on 15mm x 15mm 2oz copper board.
6. Device mounted on 25mm x 25mm 1oz copper board.
7. Device mounted on 25mm x 25mm 2oz copper board.
8. Device mounted on 50mm x 50mm 2oz copper board.
Recommended Operating Conditions (@T
A
= +25°C, unless otherwise specified.)
Symbol Parameter Min Max Unit
V
BIAS
Supply voltage range 3.5 20
V
V
OUT
OUT voltage range 1.1 100
I
LED
LED pin current (Note 9) 25 350 mA
T
A
Operating ambient temperature range -40 125 °C
Note: 9. Subject to ambient temperature, power dissipation and PCB.
NMOSFET Electrical Characteristics: (Q1) (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
100
⎯ ⎯
V
V
GS
= 0V, I
D
= 250µA
Zero Gate Voltage Drain Current
I
DSS
⎯ ⎯
1 µA
V
DS
= 60V, V
GS
= 0V
Gate-Source Leakage
I
GSS
⎯ ⎯
±100
nA
V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
2.0
⎯
4.1 V
V
DS
= V
GS
, I
D
= 250µA
Static Drain-Source On-Resistance
R
DS (ON)
⎯
⎯
⎯
0.85
0.99
Ω
V
GS
= 10V, I
D
= 1.5A
V
GS
= 6V, I
D
= 1A
Forward Transconductance
g
fs
⎯
0.9
⎯
S
V
DS
= 15V, I
D
= 1A
Diode Forward Voltage
V
SD
⎯
0.89 1.1 V
V
GS
= 0V, I
S
= 1.5A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
⎯
129
⎯
pF
V
DS
= 50V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
⎯
14
⎯
pF
Reverse Transfer Capacitance
C
rss
⎯
8
⎯
pF
P1-P3P4-P6P7-P9P10-P11

AL5801EV1

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BOARD LED CURRENT SINK
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