AL5801
Document number: DS35555 Rev. 3 - 2
4 of 11
www.diodes.com
July 2012
© Diodes Incorporated
L5801
Pre-Bias Transistor Electrical Characteristics: (Q2) (@T
A
= +25°C, unless otherwise specified.)
Characteristic (Note 10) Symbol Min Typ Max Unit Test Condition
Input Voltage
V
I(off)
0.4 - - V
V
CC
= 5V, I
O
= 100μA
V
I(on)
- - 1.5 V
V
CC
= 0.3V, I
O
= 5mA
Output Voltage
V
O(on)
- 0.05 0.3 V
I
O
/I
I
= 5mA/0.25mA
Output Current
I
O(off)
- - 0.5
μA
V
CC
= 50V, V
I
= 0V
DC Current Gain
G
1
80 - - -
V
O
= 5V, I
O
= 10mA
Input Resistance
R
1
3.2 4.7 6.2 kΩ -
Resistance Ratio
R
2
/R
1
8 10 12 - -
Notes: 10. Short duration pulse test used to minimize self-heating effect.
Thermal Characteristics
0.2
0.4
0.6
0.8
1.2
0 25 50 75 100 125 150
TEMPERATURE (°C)
Figure 2 Derating Curve
X
WE
ISSI
I
(W)
1.0
0
50mm x 50mm
(2oz. FR4)
25mm x 25mm
(2oz. FR4)
15mm x 15mm
(2oz. FR4)
0.2
0.4
0.6
0.8
1.2
0 500 1,000 1,500 2,000 2,500
COPPER AREA (mm )
Figure 3 Area vs. Max Power
2
AX
WE
ISSI
A
I
(W)
T = 25°C
2oz. FR4
A
1.0
0
100
120
140
160
180
0.0001 0.001 0.01 0.1 1 10 100 1,000
PULSE WIDTH (s)
Figure 4 Transient Thermal Impedance
J
I
AMBIE
AI
THERMAL RESISTANCE (°C/W)
T = 25°C
25mm x 25mm
1oz. FR4
A
80
60
40
20
0
D = 0.05
D = 0.1
Single Pulse
D = 0.2
D = 0.5
