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BGU8051X

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
BGU8051
Low noise high linearity amplifier
Rev. 7 — 8 June 2017 Product data sheet
COMPANY PUBLIC
H
W
S
O
N
8
1 General description
The BGU8051 is, also known as the BTS1001L, a low noise high linearity amplifier
for wireless infrastructure applications, equipped with fast shutdown to support TDD
systems. The LNA has a high input and output return loss and is designed to operate
between 0.3 GHz and 1.5 GHz. It is housed in a 2 mm × 2 mm × 0.75 mm 8-terminal
plastic thin small outline package. The LNA is ESD protected on all terminals.
2 Features and benefits
• Low noise performance: NF = 0.43 dB
• High linearity performance: IP3
O
= 39 dBm
• High input return loss > 15 dB
• High output return loss > 20 dB
• Unconditionally stable
• Programmable bias current (via resistor)
• Small 8-terminal leadless package 2 mm × 2 mm × 0.75 mm
• ESD protection on all terminals
• Moisture sensitivity level 1
• Fast shut down to support TDD systems
• 3 V to 5 V single supply
3 Applications
• Wireless infrastructure
• Low noise and high linearity applications
• LTE, W-CDMA, CDMA, GSM
• General-purpose wireless applications
• TDD or FDD systems
• Suitable for small cells
NXP Semiconductors
BGU8051
Low noise high linearity amplifier
BGU8051 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2017. All rights reserved.
Product data sheet Rev. 7 — 8 June 2017
COMPANY PUBLIC 2 / 16
4 Quick reference data
Table 1. Quick reference data
f = 900 MHz, V
CC
= 5 V, T
amb
= 25 °C, input and output 50 Ω; R
bias
= 5.1 kΩ; unless otherwise specified. All RF parameters
are measured in an application board as shown in Figure 16 with components listed in Table 9 optimized for f = 900 MHz.
Symbol Parameter Conditions Min Typ Max Unit
on state 36 48 60 mAI
CC
supply current
off state - 2.8 - mA
on state 17 18.3 20 dBG
ass
associated gain
off state - -21 - dB
NF noise figure - 0.43 0.63 dB
P
L(1dB)
output power at 1 dB gain compression - 19 - dBm
IP3
O
output third-order intercept point 2-tone; tone spacing = 1 MHz;P
i
=
-15 dBm per tone
35 39 - dBm
5 Ordering information
Table 2. Ordering information
PackageType number
Name Description Version
BGU8051 HWSON8 plastic thermal enhanced very very thin small outline package; no
leads; 8 terminals; body 2 × 2 × 0.75 mm
SOT1327-1
6 Block diagram
aaa-021372
RF
IN
V
BIAS
n.c.
i.c.
RF
OUT
n.c.
SHDN
i.c.
BIAS
Figure 1. Block diagram
NXP Semiconductors
BGU8051
Low noise high linearity amplifier
BGU8051 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2017. All rights reserved.
Product data sheet Rev. 7 — 8 June 2017
COMPANY PUBLIC 3 / 16
7 Pinning information
7.1 Pinning
Transparent top view
terminal 1
index area
aaa-015034
8
5
6
7
n.c.
i.c.
SHDN
RF_OUT
1
4
3
2
V
BIAS
i.c.
n.c.
RF_IN
Figure 2. Pin configuration
7.2 Pin description
Table 3. Pin description
Symbol Pin Description
V
BIAS
1 bias voltage
RF_IN 2 RF input
n.c. 3, 8 not connected
i.c. 4, 5 internally connected. Can be grounded or left open in the application
SHDN 6 shutdown
RF_OUT 7 RF output
GND exposed die pad ground
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

BGU8051X

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Buy BGU8051X
Manufacturer:
NXP Semiconductors
Description:
RF Amplifier Low noise high linearity amplifier
Lifecycle:
New from this manufacturer.
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