PBSS4360PAS
60 V, 3 A NPN low VCEsat (BISS) transistor
16 October 2015 Product data sheet
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1. General description
NPN low V
CEsat
Breakthrough in a Small Signal (BISS) transistor, encapsulated in an
ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD)
plastic package with medium power capability and visible and soldarable side pads.
PNP complement: PBSS5360PAS
2. Features and benefits
•
Low collector-emitter saturation voltage V
CEsat
•
High collector current capability I
C
and I
CM
•
High collector current gain (h
FE
) at high I
C
•
High efficiency due to less heat generation
•
High temperature applications up to 175 °C
•
Reduced Printed-Circuit Board (PCB) area requirements
•
Leadless small SMD plastic package with soldarable side pads
•
Exposed heat sink for excellent thermal and electrical conductivity
•
Suitable for Automatic Optical Inspection (AOI) of solder joint
•
AEC-Q101 qualified
3. Applications
•
Loadswitch
•
Battery-driven devices
•
Power management
•
Charging circuits
•
Power switches (e.g. motors, fans)
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
CEO
collector-emitter
voltage
open base - - 60 V
I
C
collector current - - 3 A
I
CM
peak collector current single pulse; t
p
≤ 1 ms - - 6 A
R
CEsat
collector-emitter
saturation resistance
I
C
= 3 A; I
B
= 300 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02; T
amb
= 25 °C
- 73 108 mΩ
