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PBSS4360PASX
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P18
P19-P19
NXP Semiconductors
PBSS4360P
AS
60 V
, 3 A NPN low VCEsat (BISS) transistor
PBSS4360PAS
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
16 October 2015
9 / 18
Symbol
Parameter
Conditions
Min
T
yp
Max
Unit
f
T
transition frequency
V
CE
= 10 V; I
C
= 100 mA; f = 100 MHz;
T
amb
= 25 °C
75
160
-
MHz
C
c
collector capacitance
V
CB
= 10 V; I
E
= 0 A; i
e
= 0 A;
f = 1 MHz; T
amb
= 25 °C
-
1
1
14
pF
200
400
600
h
FE
0
I
C
(mA)
10
-1
10
4
10
3
1
10
2
10
(1)
(2)
(3)
aaa-019922
V
CE
= 2 V
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
Fig. 8.
DC current gain as a function of collector
current; typical values
V
CE
(V)
0
2.0
1.5
0.5
1.0
aaa-019923
1.2
1.8
0.6
2.4
3.0
I
C
(A)
0
24.3 mA
21.6 mA
18.9 mA
16.2 mA
13.5 mA
10.8 mA
8.1 mA
2.7 mA
5.4 mA
I
B
= 27 mA
T
amb
= 25 °C
Fig. 9.
Collector current as a function of collector-
emitter voltage; typical values
NXP Semiconductors
PBSS4360P
AS
60 V
, 3 A NPN low VCEsat (BISS) transistor
PBSS4360PAS
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
16 October 2015
10 / 18
aaa-019924
0.4
0.8
1.2
V
BE
(V)
0
I
C
(mA)
10
-1
10
4
10
3
1
10
2
10
(1)
(2)
(3)
V
CE
= 2 V
(1) T
amb
= −55 °C
(2) T
amb
= 25 °C
(3) T
amb
= 100 °C
Fig. 10.
Base-emitter voltage as a function of collector
current; typical values
aaa-019925
0.6
0.3
0.9
1.2
0
V
BEsat
(V)
I
C
(mA)
-10
-1
-10
4
-10
3
-1
-10
2
-10
(1)
(2)
(3)
I
C
/I
B
= 20
(1) T
amb
= −55 °C
(2) T
amb
= 25 °C
(3) T
amb
= 100 °C
Fig. 1
1.
Base-emitter saturation voltage as a function of
collector current; typical values
aaa-019926
I
C
(mA)
10
-1
10
4
10
3
1
10
2
10
10
-1
1
V
CEsat
(V)
10
-2
(1)
(2)
(3)
I
C
/I
B
= 20
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
Fig. 12.
Collector-emitter saturation voltage as a
function of collector current; typical values
aaa-019927
10
-1
10
-2
1
V
CEsat
(V)
10
-3
I
C
(mA)
10
-1
10
4
10
3
1
10
2
10
(1)
(2)
(3)
T
amb
= 25 °C
(1) I
C
/I
B
= 100
(2) I
C
/I
B
= 50
(3) I
C
/I
B
= 10
Fig. 13.
Collector-emitter saturation voltage as a
function of collector current; typical values
NXP Semiconductors
PBSS4360P
AS
60 V
, 3 A NPN low VCEsat (BISS) transistor
PBSS4360PAS
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
16 October 2015
11 / 18
I
C
(mA)
10
-1
10
4
10
3
1
10
2
10
aaa-019928
1
10
-1
10
2
10
10
3
R
CEsat
(Ω)
10
-2
(1)
(2)
(3)
I
C
/I
B
= 20
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
Fig. 14.
Collector-emitter saturation resistance as a
function of collector current; typical values
aaa-019929
I
C
(mA)
10
-1
10
4
10
3
1
10
2
10
10
-1
1
10
10
2
R
CEsat
(Ω)
10
-2
(1)
(2)
(3)
T
amb
= 25 °C
(1) I
C
/I
B
= 100
(2) I
C
/I
B
= 50
(3) I
C
/I
B
= 10
Fig. 15.
Collector-emitter saturation resistance as a
function of collector current; typical values
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P18
P19-P19
PBSS4360PASX
Mfr. #:
Buy PBSS4360PASX
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT PBSS4360PAS/HUSON3/REEL 7" Q1/
Lifecycle:
New from this manufacturer.
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