OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

DMN2300UFD-7

P1-P3P4-P6P7-P7
DMN2300UFD
Datasheet Number: DS35443 Rev. 2 - 2
1 of 7
www.diodes.com
September 2011
© Diodes Incorporated
A
Product Line o
f
Diodes Incorporated
DMN2300UFD
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(on)
Max
I
D
max
T
A
= 25°C
(Notes 4)
20V
200mΩ @ V
GS
= 4.5V
1.73A
260mΩ @ V
GS
= 2.5V
1.50A
400mΩ @ V
GS
= 1.8V
1.27A
500mΩ @ V
GS
= 1.5V
1.15A
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(R
DS(on)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
• Load switch
Features and Benefits
• Low Gate Threshold Voltage
• Fast Switching Speed
• “Lead Free”, RoHS Compliant (Note 1)
• Halogen and Antimony Free. "Green" Device (Note 2)
• ESD Protected Gate 2KV
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: X1-DFN1212-3
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish ۛ NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
• Weight: 0.005 grams (approximate)
Ordering Information (Note 3)
Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel
DMN2300UFD-7 KS2 7 8 3000
Notes: 1. No purposefully added lead
2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Date Code Key
Year 2011 2012 2013 2014 2015 2016 2017
Code Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
Equivalent Circuit
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
Top View Bottom View
Pin-out Top view
X1-DFN1212-3
KS2 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
DMN2300UFD
Datasheet Number: DS35443 Rev. 2 - 2
2 of 7
www.diodes.com
September 2011
© Diodes Incorporated
A
Product Line o
f
Diodes Incorporated
DMN2300UFD
Maximum Ratings @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Drain-Source Voltage
V
DSS
20 V
Gate-Source Voltage
V
GSS
±8 V
Continuous Drain Current
Steady
State
T
A
= 25°C (Note 4)
I
D
1.73
A
T
A
= 85°C (Note 4)
1.34
T
A
= 25°C (Note 5)
1.21
Pulsed Drain Current (Note 6)
I
DM
6.0 A
Thermal Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Power Dissipation
(Note 4)
P
D
0.96 W
(Note 5) 0.47 W
Thermal Resistance, Junction to Ambient
(Note 4)
R
θJA
130 °C/W
(Note 5) 265 °C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150 °C
Notes: 4. For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of 2oz copper, in still air conditions; the device is measured
when operating in a steady-state condition.
5. Same as note 4, except the device is mounted on minimum recommended pad layout.
6. Device mounted on minimum recommended pad layout test board, 10µs pulse duty cycle = 1%.
Thermal Characteristics
0
1
2
3
4
5
6
7
8
9
10
0.0001 0.001 0.01 0.1 1 10 100 1000
t1, PULSE DURATION TIME (sec)
Fig. 1 Single Pulse Maximum Power Dissipation
Single Pulse
R = 136 C/W
θ
JA
°
R (t) = R *r(t)
T - T = P*R
θθ
θ
JA JA
JA JA
P(pk), PEAK TRANSIENT POWER (W)
0.1 1 10 100
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 2 SOA, Safe Operation Area
0.01
0.1
1
10
I , DRAIN CURRENT (A)
D
0.001
I
(
A
)
@
P
=
1
0
s
D
W
I
(
A
)
@
D
C
D
I
(
A
)
@
P
=
1
s
D
W
I
(
A
)
@
P
=
1
0
0
m
s
D
W
I
(
A
)
@
P
=
1
0
m
s
D
W
T = 150 C
T= 25C
Single Pulse
J(MAX)
A
°
°
R
Limited
DS(ON)
I(A) @P=1ms
DW
I(A) @
P =10µs
D
W
I
(
A
)
@
P
=
1
0
0
µ
s
D
W
DMN2300UFD
Datasheet Number: DS35443 Rev. 2 - 2
3 of 7
www.diodes.com
September 2011
© Diodes Incorporated
A
Product Line o
f
Diodes Incorporated
DMN2300UFD
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
t1, PULSE DURATION TIMES (sec)
Fig. 3 Transient Thermal Resistance
0.000001
0.001
0.01
0.1
1
r(t),
T
R
ANSIEN
T
T
H
E
R
MAL
R
ESIS
T
AN
C
E
R (t) = r(t) * R
θθ
JA JA
R = 136°C/W
Duty Cycle, D = t1/ t2
θ
JA
D = 0.7
D = 0.5
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9
Electrical Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
20 - - V
V
GS
= 0V, I
D
= 250μA
Zero Gate Voltage Drain Current T
J
= 25°C I
DSS
- - 1
μA
V
DS
= 20V, V
GS
= 0V
Gate-Source Leakage
I
GSS
- - ±10
μA
V
GS
= ±8V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS
(
th
)
0.45 - 0.95 V
V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance
R
DS (ON)
- -
200
mΩ
V
GS
= 4.5V, I
D
= 900mA
260
V
GS
= 2.5V, I
D
= 800mA
400
V
GS
= 1.8V, I
D
= 700mA
500
V
GS
= 1.5V, I
D
= 200mA
Forward Transfer Admittance
|Y
fs
|
40 - - mS
V
DS
= 3V, I
D
= 300mA
Diode Forward Voltage
V
SD
- 0.7 1.2 V
V
GS
= 0V, I
S
= 300mA
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
- 67.62 -
pF
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
- 9.74 -
pF
Reverse Transfer Capacitance
C
rss
- 7.58 -
pF
Gate Resistance
R
g
- 68.51 -
Ω
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (Note 8)
Q
g
- 0.89 2
nC
V
GS
= 4.5V, V
DS
= 15V,
I
D
= 1A
Gate-Source Charge
Q
g
s
- 0.14 -
nC
Gate-Drain Charge
Q
g
d
- 0.16 -
nC
Turn-On Delay Time
t
D
(
on
)
- 4.92 -
ns
V
DS
= 10V, I
D
= 1A
V
GS
= 10V, R
G
= 6Ω
Turn-On Rise Time
t
- 6.93 -
ns
Turn-Off Delay Time
t
D
(
off
)
- 21.71 -
ns
Turn-Off Fall Time
t
f
- 10.62 -
ns
Notes: 7. Short duration pulse test used to minimize self-heating effect.
8. Guarantee by design.
P1-P3P4-P6P7-P7

DMN2300UFD-7

Mfr. #:
Buy DMN2300UFD-7
Manufacturer:
Diodes Incorporated
Description:
MOSFET MOSFET BVDSS: 8V-24V X1-DFN1212-3,3K
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet