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DMN2300UFD-7

P1-P3P4-P6P7-P7
DMN2300UFD
Datasheet Number: DS35443 Rev. 2 - 2
4 of 7
www.diodes.com
September 2011
© Diodes Incorporated
A
Product Line o
f
Diodes Incorporated
DMN2300UFD
012 345
Fig. 4 Typical Output Characteristic
V , DRAIN-SOURCE VOLTAGE (V)
DS
0
0.5
1.0
1.5
2.0
I, D
R
AIN
C
U
R
R
EN
T
(A)
D
V = 1.2V
GS
V = 1.5V
GS
V = 1.8V
GS
V = 2.0V
GS
V = 2.5V
GS
V = 4.5V
GS
0
0.5
1.0
1.5
2.0
0 0.5 1 1.5 2 2.5 3
Fig. 5 Typical Transfer Characteristic
V , GATE-SOURCE VOLTAGE (V)
GS
I, D
R
AI
N
C
U
R
R
E
N
T
(A)
D
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 5V
DS
0 0.4 0.8 1.2 1.6 2
Fig. 6 Typical On-Resistance
vs. Drain Current and Gate Voltage
I , DRAIN-SOURCE CURRENT (A)
D
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
Ω
0
0.2
0.4
0.6
0.8
1
V = 4.5V
GS
V = 2.5V
GS
V = 1.8V
GS
V = 1.5V
GS
I , DRAIN CURRENT (A)
D
Fig. 7 Typical On-Resistance
vs. Drain Current and Temperature
R
, D
R
A
IN-
S
OU
R
C
E
ON-
R
E
S
I
S
T
A
N
C
E
()
DS(ON)
Ω
0
0.1
0.2
0.3
0.4
0.5
0.6
00.20.40.60.81
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 4.5V
GS
I , DRAIN CURRENT (A)
D
Fig. 8 Typical On-Resistance
vs. Drain Current and Temperature
R
, D
R
AI
N
-
S
O
U
R
C
E
O
N
-
R
E
S
I
S
T
A
N
C
E
()
DS(ON)
Ω
0
0.1
0.2
0.3
0.4
0.5
0.6
0 0.2 0.4 0.6 0.8 1
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 1.8V
GS
I , DRAIN CURRENT (A)
D
Fig. 9 Typical On-Resistance
vs. Drain Current and Temperature
R
, D
R
A
IN-
S
OU
R
C
E
ON-
R
E
S
I
S
T
A
N
C
E
()
DS(ON)
Ω
0
0.1
0.2
0.3
0.4
0.5
0.6
00.20.40.60.81
T = -55°C
A
T
=
2
5
°
C
A
T
=
8
5
°
C
A
T
=
1
2
5
°
C
A
T = 150°C
A
V = 1.5V
GS
DMN2300UFD
Datasheet Number: DS35443 Rev. 2 - 2
5 of 7
www.diodes.com
September 2011
© Diodes Incorporated
A
Product Line o
f
Diodes Incorporated
DMN2300UFD
Fig. 10 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
R , DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
DSON
0.5
0.7
0.9
1.1
1.3
1.5
1.
7
V = 1.8V
I = 100mA
GS
D
V = 4.5V
I = 1.0A
GS
D
V = 1.5V
I = 50mA
GS
D
V = 2.5V
I = 500mA
GS
D
Fig. 11 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
R , DRAIN-SOURCE ON-RESISTANCE ( )
DSON
Ω
0
0.1
0.2
0.3
0.4
0.5
0.6
V = 1.5V
I = 50mA
GS
D
V = 1.8V
I = 100mA
GS
D
V = 4.5V
I = 1.0A
GS
D
V = 2.5V
I = 500mA
GS
D
Fig. 12 Gate Threshold Variation vs. Ambient Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
0
0.2
0.4
0.6
0.8
1.0
1.
2
V,
G
A
T
E
T
H
R
ES
H
O
LD V
O
L
T
A
G
E (V)
GS(TH)
I = 250µA
D
I = 1mA
D
0 0.2 0.4 0.6 0.8 1.0 1.2
Fig. 13 Diode Forward Voltage vs. Current
V , SOURCE-DRAIN VOLTAGE (V)
SD
0
0.4
0.8
1.2
1.6
2.0
I, S
O
U
R
C
E
C
U
R
R
E
N
T
(A)
S
T = 25°C
A
2 4 6 8 10 12 14 16 18 20
1
10
100
1,000
I , LEAKA
G
E
C
U
R
R
EN
T
(nA)
DSS
Fig. 14 Typical Leakage Current
vs. Drain-Source Voltage
V , DRAIN-SOURCE VOLTAGE (V)
DS
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = -55°C
A
1
10
100
1,000
10,000
100,000
2 4 6 8 10 12
V , GATE-SOURCE VOLTAGE (V)
GS
Fig.15 Leakage Current vs. Gate-Source Voltage
I , LEAKA
G
E
C
U
R
R
EN
T
(nA)
GSS
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
T = -55°C
A
DMN2300UFD
Datasheet Number: DS35443 Rev. 2 - 2
6 of 7
www.diodes.com
September 2011
© Diodes Incorporated
A
Product Line o
f
Diodes Incorporated
DMN2300UFD
0
2
4
6
8
0 0.5 1 1.5 2 2.5 3
Fig. 16 Gate-Charge Characteristics
Q , TOTAL GATE CHARGE (nC)
g
V , GATE-SOURCE VOLTAGE (V)
GS
V = 15V
I = 1A
DS
D
Package Outline Dimensions
Suggested Pad Layout
X1-DFN1212-3
Dim Min Max Typ
A 0.47 0.53 0.50
A1 0 0.05 0.02
A3 - - 0.13
b 0.27 0.37 0.32
b1 0.17 0.27 0.22
D 1.15 1.25 1.20
E 1.15 1.25 1.20
e - - 0.80
L 0.25 0.35 0.30
All Dimensions in mm
Dimensions Value (in mm)
C 0.80
X 0.42
X1 0.32
Y 0.50
Y1 0.50
Y2 1.50
A1
A3
D
e
E
b
A
b1
(2x)
L
Y2
X
X1
(2x)
Y
Y1
(2x)
C
P1-P3P4-P6P7-P7

DMN2300UFD-7

Mfr. #:
Buy DMN2300UFD-7
Manufacturer:
Diodes Incorporated
Description:
MOSFET MOSFET BVDSS: 8V-24V X1-DFN1212-3,3K
Lifecycle:
New from this manufacturer.
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