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BYQ28E-200E,127

P1-P3P4-P6P7-P9P10-P12
IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV), WeEn Semiconductors, which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW - For www.nxp.com use www.ween-semi.com
Email - For salesaddresses@nxp.com use salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V. {year}. All rights reserved” becomes “
©
WeEn
Semiconductors Co., Ltd. {year}. All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
1. Product profile
1.1 General description
Dual ultrafast power diodes in a SOT78 (TO-220AB) plastic package. These diodes are
rugged with a guaranteed electrostatic discharge voltage capability.
1.2 Features and benefits
Fast switching
Guaranteed ESD capability
High thermal cycling performance
Low on-state losses
Low thermal resistance
Soft recovery minimizes
power-consuming oscillations
1.3 Applications
Output rectifiers in high-frequency
switched-mode power supplies
1.4 Quick reference data
BYQ28E-200E
Dual ultrafast power diodes
Rev. 4 — 14 July 2011 Product data sheet
TO-220AB
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
RRM
repetitive peak reverse
voltage
--200V
I
O(AV)
average output current square-wave pulse; δ =0.5;
T
mb
≤ 119 °C; both diodes
conducting; see Figure 1
;
see Figure 2
--10A
I
FRM
repetitive peak forward
current
δ =0.5; t
p
= 25 µs;
T
mb
≤ 119 °C; per diode;
square-wave pulse
--10A
Static characteristics
V
F
forward voltage I
F
=5A; T
j
= 150 °C;
see Figure 4
- 0.8 0.89
5
V
Dynamic characteristics
t
rr
reverse recovery time I
F
=1A; V
R
=30V;
dI
F
/dt = 100 A/µs; T
j
=25°C;
ramp recovery; see Figure 5
- 1525ns
Electrostatic discharge
V
ESD
electrostatic discharge
voltage
HBM; C = 250 pF; R = 1.5 kΩ;
all pins
--8kV
BYQ28E-200E All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 4 — 14 July 2011 2 of 11
NXP Semiconductors
BYQ28E-200E
Dual ultrafast power diodes
2. Pinning information
3. Ordering information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 A1 anode 1
SOT78 (TO-220AB)
2 K cathode
3 A2 anode 2
mb K mounting base; cathode
12
mb
3
sym125
A2A1
K
Table 3. Ordering information
Type number Package
Name Description Version
BYQ28E-200E TO-220AB plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
SOT78
P1-P3P4-P6P7-P9P10-P12

BYQ28E-200E,127

Mfr. #:
Buy BYQ28E-200E,127
Manufacturer:
WeEn Semiconductors
Description:
Rectifiers DUAL ULTRAFAST PWR DIODE
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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