BYQ28E-200E All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 4 — 14 July 2011 3 of 11
NXP Semiconductors
BYQ28E-200E
Dual ultrafast power diodes
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
RRM
repetitive peak reverse voltage - 200 V
V
RWM
crest working reverse voltage - 200 V
V
R
reverse voltage DC - 200 V
I
O(AV)
average output current square-wave pulse; δ = 0.5 ; T
mb
≤ 119 °C;
both diodes conducting; see Figure 1;
see Figure 2
-10A
I
FRM
repetitive peak forward current δ =0.5; t
p
= 25 µs; T
mb
≤ 119 °C; per diode;
square-wave pulse
-10A
I
FSM
non-repetitive peak forward
current
t
p
= 8.3 ms; sine-wave pulse; T
j(init)
=25°C;
per diode
-55A
t
p
= 10 ms; sine-wave pulse; T
j(init)
=25°C;
per diode
-50A
I
RRM
repetitive peak reverse current δ = 0.001 ; t
p
=2µs - 0.2 A
I
RSM
non-repetitive peak reverse
current
t
p
= 100 µs - 0.2 A
T
stg
storage temperature -40 150 °C
T
j
junction temperature - 150 °C
Electrostatic discharge
V
ESD
electrostatic discharge voltage HBM; C = 250 pF; R = 1.5 kΩ; all pins - 8 kV
Fig 1. Forward power dissipation as a function of
average forward current; square waveform;
maximum values
Fig 2. Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
I
F(AV)
(A)
08624
001aag976
4
2
6
8
P
tot
(W)
0
δ = 1
0.2
0.1
0.5
001aag977
I
F(AV)
(A)
0642
2
4
6
P
tot
(W)
0
a = 1.57
2.2
2.8
4.0
1.9
