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PD55035-E

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P22
May 2010 Doc ID 12331 Rev 2 1/22
22
PD55035-E
PD55035S-E
RF POWER transistor, LdmoST plastic family
N-channel enhancement-mode, lateral MOSFETs
Features
■ Excellent thermal stability
■ Common source configuration
■ P
OUT
= 35 W with 16.9dB gain @ 500 MHz /
12.5 V
■ New RF plastic package
Description
The device is a common source N-channel,
enhancement-mode lateral field-effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It
operates at 12 V in common source mode at
frequencies of up to 1 GHz. The device boasts the
excellent gain, linearity and reliability of ST’s
latest LDMOS technology mounted in the first
true SMD plastic RF power package, PowerSO-
10RF. Device’s superior linearity performance
makes it an ideal solution for car mobile radio.
The PowerSO-10 plastic package, designed to
offer high reliability, is the first ST JEDEC
approved, high power SMD package. It has been
specially optimized for RF needs and offers
excellent RF performances and ease of assembly.
Mounting recommendations are available in
www.st.com/rf/ (look for application note
AN1294).
Figure 1. Pin connection
PowerSO-10RF
(formed lead)
PowerSO-10RF
(straight lead)
Gate
Source
Drain
Table 1. Device summary
Order code Package Packing
PD55035-E PowerSO-10RF (formed lead) Tube
PD55035S-E PowerSO-10RF (straight lead) Tube
PD55035TR-E PowerSO-10RF (formed lead) Tape and reel
PD55035STR-E PowerSO-10RF (straight lead) Tape and reel
www.st.com
Contents PD55035-E, PD55035S-E
2/22 Doc ID 12331 Rev 2
Contents
1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Static . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.2 Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.3 Moisture sensitivity level . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 Impedance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
4 Typical performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
5 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
6 Typical performance 175 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
7 Common source s-parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
PD55035-E, PD55035S-E Electrical data
Doc ID 12331 Rev 2 3/22
1 Electrical data
1.1 Maximum ratings
1.2 Thermal data
Table 2. Absolute maximum ratings (T
CASE
= 25°C)
Symbol Parameter Value Unit
V
(BR)DSS
Drain-source voltage 40 V
V
GS
Gate-source voltage ± 20 V
I
D
Drain current 7 A
P
DISS
Power dissipation (@ T
C
= 70°C) 95 W
T
J
Max. operating junction temperature 165 °C
T
STG
Storage temperature -65 to +150 °C
Table 3. Thermal data
Symbol Parameter Value Unit
R
thJC
Junction - case thermal resistance 1.0 °C/W
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P22

PD55035-E

Mfr. #:
Buy PD55035-E
Manufacturer:
STMicroelectronics
Description:
RF MOSFET Transistors RF Pwr Transistors LDMOST Plastic N Ch
Lifecycle:
New from this manufacturer.
Delivery:
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