EE-SPZ301/401/W-01/W-02/Y-01EE-SPZ301/401/W-01/W-02/Y-01
Specifications
RATINGS
Item Transmissive (with lens) Transmissive (without lens) Reflective (with lens)
EE-SPZ301
W-01
EE-SPZ401
W-01
EE-SPZ301
W-02
EE-SPZ401
W-02
EE-SPZ301
Y-01
EE-SPZ401
Y-01
Supply voltage 5to24VDC
±
10%, ripple (p-p): 5% max.
Current consumption Average: 15 mA max.; Peak: 50 mA max.
Sensing distance 30 mm 5mm 1 to 3 mm (reflection factor:
90%; white paper 15 x 15 mm)
Standard reference object Opaque: 4 dia. min. Opaque: 1 dia. min. Transparent, opaque
Differential distance — — —
Control output At 5 to 24 VDC: 80-mA load current (I
C
) with a residual voltage of 1.0 V max.
When driving TTL: 10-mA load current (I
C
) with a residual voltage of 0.4 V max.
Output
configuration
Transistor on output
stage without
detecting object
OFF ON OFF ON ON OFF
Transistor on output
stage with detecting
object
ON OFF ON OFF OFF ON
Indicator* Without detecting
object
ON ON ON
With detecting object OFF OFF OFF
Response frequency** 100 Hz
Connecting method Dedicated connector (no soldering possible), EE-1002, EE-1003 (with/1-m cable attached)
Light source GaAs infrared LED (pulse modulated) with a peak wavelength of 940 nm
Receiver Si photo-diode with (pulse modulated) a sensing wavelength of 850 nm max.
*The indicator is a GaP red LED (peak emission wavelength: 690 nm).
**The response frequency was measured by detecting the following disks rotating:
2mm
30 mm
Reflective Transmissive
15 mm
15 mm
15 mm
200 mm
dia.
CHARACTERISTICS
Ambient illumination Incandescent/fluorescent light: 3,000 xmax.
Ambient temperature
Operating -10
°
Cto55
°
C(14
°
F to 131
°
F)
Storage -25
°
Cto65
°
C (-13
°
F to 149
°
F)
Ambient humidity
Operating 35% to 85%
Storage 35% to 95%
Vibration resistance Destruction: 10 to 55 Hz, 1.5-mm double amplitude for 2 hrs each in X, Y, and Z directions
Shock resistance Destruction: 500 m/s
2
(approx. 50G’s) for 3 times each in X, Y, and Z directions
Cable length 5 m max. (AWG24 min.)
