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NX3L2G384GM,125

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21
NX3L2G384 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 7 — 26 March 2013 4 of 21
NXP Semiconductors
NX3L2G384
Dual low-ohmic single-pole single-throw analog switch
7.2 Pin description
8. Functional description
[1] H = HIGH voltage level;
L = LOW voltage level.
9. Limiting values
[1] The minimum input voltage rating may be exceeded if the input current rating is observed.
[2] The minimum and maximum switch voltage ratings may be exceeded if the switch clamping current rating is observed but may not
exceed 4.6 V.
[3] For XSON8 and XQFN8 packages: above 118 C the value of P
tot
derates linearly with 7.8 mW/K.
Table 3. Pin description
Symbol Pin Description
SOT833-1 and SOT996-2 SOT902-2
1Y, 2Y 1, 5 7, 3 independent input or output
1Z, 2Z 2, 6 6, 2 independent input or output
GND 4 4 ground (0 V)
1E
, 2E 7, 3 1, 5 enable input (active LOW)
V
CC
8 8 supply voltage
Table 4. Function table
[1]
Input nE Switch
L ON-state
HOFF-state
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions Min Max Unit
V
CC
supply voltage 0.5 +4.6 V
V
I
input voltage enable input nE
[1]
0.5 +4.6 V
V
SW
switch voltage
[2]
0.5 V
CC
+ 0.5 V
I
IK
input clamping current V
I
< 0.5 V 50 - mA
I
SK
switch clamping current V
I
< 0.5 V or V
I
>V
CC
+ 0.5 V - 50 mA
I
SW
switch current V
SW
> 0.5 V or V
SW
< V
CC
+ 0.5 V;
source or sink current
- 350 mA
V
SW
> 0.5 V or V
SW
< V
CC
+ 0.5 V;
pulsed at 1 ms duration, < 10 % duty cycle;
peak current
- 500 mA
T
stg
storage temperature 65 +150 C
P
tot
total power dissipation T
amb
= 40 Cto+125C
[3]
-250mW
NX3L2G384 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 7 — 26 March 2013 5 of 21
NXP Semiconductors
NX3L2G384
Dual low-ohmic single-pole single-throw analog switch
10. Recommended operating conditions
[1] To avoid sinking GND current from terminal nZ when switch current flows in terminal nY, the voltage drop across the bidirectional switch
must not exceed 0.4 V. If the switch current flows into terminal nZ, no GND current will flow from terminal nY. In this case, there is no
limit for the voltage drop across the switch.
[2] Applies to control signal levels.
11. Static characteristics
Table 6. Recommended operating conditions
Symbol Parameter Conditions Min Typ Max Unit
V
CC
supply voltage 1.4 - 4.3 V
V
I
input voltage enable input nE 0- 4.3V
V
SW
switch voltage
[1]
0- V
CC
V
T
amb
ambient temperature 40 - +125 C
t/V input transition rise and fall rate V
CC
= 1.4 V to 4.3 V
[2]
- - 200 ns/V
Table 7. Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground 0 V).
Symbol Parameter Conditions T
amb
= 25 C T
amb
= 40 C to +125 C Unit
Min Typ Max Min Max
(85 C)
Max
(125 C)
V
IH
HIGH-level
input voltage
V
CC
= 1.4 V to 1.95 V 0.65V
CC
- - 0.65V
CC
--V
V
CC
= 2.3 V to 2.7 V 1.7 - - 1.7 - - V
V
CC
= 2.7 V to 3.6 V 2.0 - - 2.0 - - V
V
CC
= 3.6 V to 4.3 V 0.7V
CC
- - 0.7V
CC
--V
V
IL
LOW-level
input voltage
V
CC
= 1.4 V to 1.95 V - - 0.35V
CC
- 0.35V
CC
0.35V
CC
V
V
CC
= 2.3 V to 2.7 V - - 0.7 - 0.7 0.7 V
V
CC
= 2.7 V to 3.6 V - - 0.8 - 0.8 0.8 V
V
CC
= 3.6 V to 4.3 V - - 0.3V
CC
-0.3V
CC
0.3V
CC
V
I
I
input leakage
current
enable input nE;
V
I
=GNDto4.3V;
V
CC
= 1.4 V to 4.3 V
--- -0.5 1 A
I
S(OFF)
OFF-state
leakage
current
nY port; see Figure 6
V
CC
= 1.4 V to 3.6 V - - 5-50 500 nA
V
CC
= 3.6 V to 4.3 V - - 10 - 50 500 nA
I
S(ON)
ON-state
leakage
current
nZ port; see Figure 7
V
CC
= 1.4 V to 3.6 V - - 5-50 500 nA
V
CC
= 3.6 V to 4.3 V - - 10 - 50 500 nA
I
CC
supply current V
I
=V
CC
or GND;
V
SW
=GNDorV
CC
V
CC
= 3.6 V - - 100 - 690 6000 nA
V
CC
= 4.3 V - - 150 - 800 7000 nA
NX3L2G384 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 7 — 26 March 2013 6 of 21
NXP Semiconductors
NX3L2G384
Dual low-ohmic single-pole single-throw analog switch
11.1 Test circuits
11.2 ON resistance
C
I
input
capacitance
-1.0----pF
C
S(OFF)
OFF-state
capacitance
-35----pF
C
S(ON)
ON-state
capacitance
-110----pF
Table 7. Static characteristics
…continued
At recommended operating conditions; voltages are referenced to GND (ground 0 V).
Symbol Parameter Conditions T
amb
= 25 C T
amb
= 40 C to +125 C Unit
Min Typ Max Min Max
(85 C)
Max
(125 C)
V
I
=0.3VorV
CC
0.3 V; V
O
=V
CC
0.3 V or 0.3 V. V
I
=0.3VorV
CC
0.3 V; V
O
= open circuit.
Fig 6. Test circuit for measuring OFF-state leakage
current
Fig 7. Test circuit for measuring ON-state leakage
current
001aaj519
I
S
V
I
V
IH
V
O
V
CC
GND
nYnZ
nE
Table 8. ON resistance
At recommended operating conditions; voltages are referenced to GND (ground = 0 V); for graphs see Figure 9
to Figure 15.
Symbol Parameter Conditions T
amb
= 40 C to +85 C T
amb
40 C to
+125 C
Unit
Min Typ
[1]
Max Min Max
R
ON(peak)
ON resistance (peak) V
I
=GNDtoV
CC
;
I
SW
= 100 mA;
see Figure 8
V
CC
= 1.4 V - 1.6 3.7 - 4.1
V
CC
= 1.65 V - 1.0 1.6 - 1.7
V
CC
= 2.3 V - 0.55 0.8 - 0.9
V
CC
= 2.7 V - 0.5 0.75 - 0.9
V
CC
= 4.3 V - 0.5 0.75 - 0.9
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NX3L2G384GM,125

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Buy NX3L2G384GM,125
Manufacturer:
NXP Semiconductors
Description:
Analog Switch ICs DUAL LO-OHMIC SINGLE POLE/THROW ANALOG SW
Lifecycle:
New from this manufacturer.
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