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AUIRLS8409-7TRL

P1-P3P4-P6P7-P9P10-P11
AUIRLS8409-7P
D
2
Pak 7 Pin
G D S
Gate Drain Source
Base Part Number Package Type
Standard Pack
Complete Part Number
Form Quantity
AUIRLS8409-7P
D
2
Pak-7PIN
Tube 50
AUIRLS8409-7P
Tape and Reel Left 800 AUIRLS8409-7TRL
V
DSS
40V
R
DS(on)
typ.
0.50m
max.
0.75m
I
D (Silicon Limited)
500A
I
D (Package Limited)
240A
Symbol Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited) 500
A
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited) 353
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Wire Bond Limited) 240
I
DM
Pulsed Drain Current 1200
P
D
@T
C
= 25°C Maximum Power Dissipation 375 W
Linear Derating Factor 2.5 W/°C
V
GS
Gate-to-Source Voltage ± 16 V
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case) 300
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Features
Advanced Process Technology
Logic Level Gate Drive
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating. These
features combine to make this design an extremely efficient and
reliable device for use in Automotive applications and wide variety
of other applications.
Applications
Electric Power Steering (EPS)
Battery Switch
Start/Stop Micro Hybrid
Heavy Loads
DC-DC Converter
1 2016-02-15
Avalanche Characteristics
E
AS
(Thermally Limited)
Single Pulse Avalanche Energy 730
E
AS
(Tested)
Single Pulse Avalanche Energy 1580
I
AR
Avalanche Current
See Fig. 14, 15, 22a, 22b
A
E
AR
Repetitive Avalanche Energy mJ
mJ
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
AUIRLS8409-7P
2 2016-02-15
Static Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 40 ––– ––– V V
GS
= 0V, I
D
= 250µA
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient ––– 0.033 ––– V/°C Reference to 25°C, I
D
= 5.0mA
Static Drain-to-Source On-Resistance
––– 0.50 0.75
m
V
GS
= 10V, I
D
= 100A
––– 0.60 0.85
m
V
GS
= 5.5V, I
D
= 50A
V
GS(th)
Gate Threshold Voltage 1.0 ––– 2.4 V V
DS
= V
GS
, I
D
= 250µA
I
DSS
Drain-to-Source Leakage Current
––– ––– 1.0
µA
V
DS
= 40V, V
GS
= 0V
––– ––– 150 V
DS
= 40V, V
GS
= 0V, T
J
= 125°C
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100
nA
V
GS
= 16V
Gate-to-Source Reverse Leakage ––– ––– -100 V
GS
= -16V
R
G
Internal Gate Resistance ––– 2.0 –––

Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 220 ––– –––
S
V
DS
= 10V, I
D
= 100A
Q
g
Total Gate Charge ––– 177 266
nC
I
D
= 100A
Q
gs
Gate-to-Source Charge ––– 65 –––
V
DS
= 20V
Q
gd
Gate-to-Drain ("Miller") Charge ––– 80 –––
V
GS
= 4.5V
Q
sync
Total Gate Charge Sync. (Q
g
- Q
gd
) ––– 97 –––
t
d(on)
Turn-On Delay Time ––– 14 –––
ns
V
DD
= 20V
t
r
Rise Time ––– 71 –––
I
D
= 100A
t
d(off)
Turn-Off Delay Time ––– 260 –––
R
G
= 2.7
t
f
Fall Time ––– 115 –––
V
GS
= 10V
C
iss
Input Capacitance ––– 16488 –––
pF
V
GS
= 0V
C
oss
Output Capacitance ––– 1990 –––
V
DS
= 25V
C
rss
Reverse Transfer Capacitance ––– 1373 –––
ƒ = 1.0 MHz
C
oss
eff. (ER) Effective Output Capacitance (Energy Related) ––– 2323 ––– V
GS
= 0V, V
DS
= 0V to 32V
C
oss
eff. (TR) Effective Output Capacitance (Time Related) ––– 2875 ––– V
GS
= 0V, V
DS
= 0V to 32V
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current
––– –––
500
A
MOSFET symbol
(Body Diode) showing the
I
SM
Pulsed Source Current
––– –––
1200
A
integral reverse
(Body Diode) p-n junction diode.
V
SD
Diode Forward Voltage ––– 0.8 1.2 V T
J
= 25°C, I
S
= 100A, V
GS
= 0V
dv/dt Peak Diode Recovery ––– 2.4 ––– V/ns T
J
= 175°C, I
S
= 100A, V
GS
= 40V
t
rr
Reverse Recovery Time
––– 52 –––
ns
T
J
= 25°C
––– 57 ––– T
J
= 125°C
Q
rr
Reverse Recovery Charge
––– 97 –––
nC
T
J
= 25°C
––– 97 ––– T
J
= 125°C
I
RRM
Reverse Recovery Current ––– 2.8 ––– A T
J
= 25°C
R
DS(on)
––– 0.75 1.10
m
V
GS
= 4.5V, I
D
= 50A
V
R
= 34V,
I
F
= 100A
di/dt = 100A/µs
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
JC
Junction-to-Case ––– 0.4
R
JA
Junction-to-Ambient (PCB Mount) ––– 40
°C/W
Notesandareonpage7
AUIRLS8409-7P
3 2016-02-15
Fig. 2 Typical Output Characteristics
Fig. 3 Typical Transfer Characteristics
Fig. 4 Normalized On-Resistance vs. Temperature
Fig. 1 Typical Output Characteristics
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
10
100
1000
10000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
60µs PULSE WIDTH
Tj = 25°C
3.0V
VGS
TOP 15V
10V
6.0V
5.0V
4.5V
4.0V
3.5V
BOTTOM 3.0V
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
10
100
1000
10000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
60µs PULSE WIDTH
Tj = 175°C
3.0V
VGS
TOP 15V
10V
6.0V
5.0V
4.5V
4.0V
3.5V
BOTTOM 3.0V
1.0 2.0 3.0 4.0 5.0 6.0
V
GS
, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
10000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
V
DS
= 15V
60µs PULSE WIDTH
T
J
= 25°C
T
J
= 175°C
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T
J
, Junction Temperature (°C)
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
I
D
= 100A
V
GS
= 10V
1 10 100
V
DS
, Drain-to-Source Voltage (V)
1000
10000
100000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Coss
Crss
Ciss
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
0 100 200 300 400 500
Q
G
Total Gate Charge (nC)
0
2
4
6
8
10
12
14
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 32V
V
DS
= 20V
I
D
= 100A
P1-P3P4-P6P7-P9P10-P11

AUIRLS8409-7TRL

Mfr. #:
Buy AUIRLS8409-7TRL
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CHANNEL 30 / 40
Lifecycle:
New from this manufacturer.
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