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AUIRLS8409-7TRL

P1-P3P4-P6P7-P9P10-P11
AUIRLS8409-7P
4 2016-02-15
Fig 8. Maximum Safe Operating Area
Fig 10. Drain-to-Source Breakdown Voltage
Fig 11. Typical C
OSS Stored Energy
Fig 12. Maximum Avalanche Energy vs. Drain Current
Fig 9. Maximum Drain Current vs. Case Temperature
Fig. 7 Typical Source-to-Drain Diode
0.0 0.4 0.8 1.2 1.6
V
SD
, Source-to-Drain Voltage (V)
0.1
1
10
100
1000
10000
I
S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
T
J
= 25°C
T
J
= 175°C
V
GS
= 0V
-60 -20 20 60 100 140 180
T
J
, Temperature ( °C )
42
44
46
48
50
52
V
(
B
R
)
D
S
S
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
B
r
e
a
k
d
o
w
n
V
o
l
t
a
g
e
(
V
)
Id = 5.0mA
0 10 20 30 40
V
DS,
Drain-to-Source Voltage (V)
0.00
0.20
0.40
0.60
0.80
1.00
1.20
1.40
1.60
1.80
E
n
e
r
g
y
(
µ
J
)
25 50 75 100 125 150 175
Starting T
J
, Junction Temperature (°C)
0
500
1000
1500
2000
2500
3000
E
A
S
,
S
i
n
g
l
e
P
u
l
s
e
A
v
a
l
a
n
c
h
e
E
n
e
r
g
y
(
m
J
)
I
D
TOP
26A
51A
BOTTOM
100A
25 50 75 100 125 150 175
T
C
, Case Temperature (°C)
0
100
200
300
400
500
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
Limited By Package
0.1 1 10
V
DS
, Drain-toSource Voltage (V)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
Tc = 25°C
Tj = 175°C
Single Pulse
1msec
10msec
100µsec
DC
L
imited by
Package
OPERATION IN THIS AREA
LIMITED BY R
DS
(on)
AUIRLS8409-7P
5 2016-02-15
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 14. Typical Avalanche Current vs. Pulse width
Fig 15. Maximum Avalanche Energy vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of T
jmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as T
jmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 23a, 23b.
4. P
D (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. I
av = Allowable avalanche current.
7.
T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 13, 14).
t
av = Average time in avalanche.
D = Duty cycle in avalanche = t
av ·f
Z
thJC(D, tav) = Transient thermal resistance, see Figures 13)
P
D (ave)
= 1/2 ( 1.3·BV·I
av
) = T/ Z
thJC
I
av
= 2T/ [1.3·BV·Z
th
]
E
AS (AR)
= P
D (ave)
·t
av
1E-006 1E-005 0.0001 0.001 0.01 0.1
t
1
, Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
C
)
°
C
/
W
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
1
10
100
1000
A
v
a
l
a
n
c
h
e
C
u
r
r
e
n
t
(
A
)
0.05
Duty Cycle = Single Pulse
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming

j = 25°C and
Tstart = 150°C.
0.01
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
Tj = 150°C and
Tstart =25°C (Single Pulse)
25 50 75 100 125 150 175
Starting T
J
, Junction Temperature (°C)
0
100
200
300
400
500
600
700
800
E
A
R
,
A
v
a
l
a
n
c
h
e
E
n
e
r
g
y
(
m
J
)
TOP Single Pulse
BOTTOM 1.0% Duty Cycle
I
D
= 100A
AUIRLS8409-7P
6 2016-02-15
Fig 17. Threshold Voltage vs. Temperature
Fig. 20 - Typical Recovery Current vs. dif/dt
Fig. 18 - Typical Recovery Current vs. dif/dt
Fig. 21 - Typical Stored Charge vs. dif/dt
Fig 16. Typical On-Resistance vs. Gate Voltage
Fig. 19 - Typical Stored Charge vs. dif/dt
0 4 8 12 16 20
V
GS
, Gate-to-Source Voltage (V)
0
1
2
3
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
m
)
T
J
= 25°C
T
J
= 125°C
I
D
= 100A
-75 -50 -25 0 25 50 75 100 125 150 175
T
J
, Temperature ( °C )
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
G
S
(
t
h
)
G
a
t
e
t
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
(
V
)
I
D
= 250µA
I
D
= 1.0mA
I
D
= 1.0A
0 100 200 300 400 500 600 700 800 900
di
F
/dt (A/µs)
2
4
6
8
10
12
14
16
I
R
R
M
(
A
)
I
F
= 60A
V
R
= 34V
T
J
= 25°C
T
J
= 125°C
0 100 200 300 400 500 600 700 800 900
di
F
/dt (A/µs)
0
200
400
600
800
1000
Q
R
R
(
n
C
)
I
F
= 40A
V
R
= 34V
T
J
= 25°C
T
J
= 125°C
0 100 200 300 400 500 600 700 800 900
di
F
/dt (A/µs)
0
200
400
600
800
1000
Q
R
R
(
n
C
)
I
F
= 60A
V
R
= 34V
T
J
= 25°C
T
J
= 125°C
0 100 200 300 400 500 600 700 800 900
di
F
/dt (A/µs)
2
4
6
8
10
12
14
16
I
R
R
M
(
A
)
I
F
= 40A
V
R
= 34V
T
J
= 25°C
T
J
= 125°C
P1-P3P4-P6P7-P9P10-P11

AUIRLS8409-7TRL

Mfr. #:
Buy AUIRLS8409-7TRL
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CHANNEL 30 / 40
Lifecycle:
New from this manufacturer.
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