SZESD8351HT1G

ESD8351, SZESD8351
www.onsemi.com
4
Latch−Up Considerations
ON Semiconductors 8000 series of ESD protection
devices utilize a snap−back, SCR type structure. By using
this technology, the potential for a latch−up condition was
taken into account by performing load line analysis of
common high speed serial interfaces. Example load lines for
latch−up free applications and applications with the
potential for latch−up are shown below with a generic IV
characteristic of a snapback, SCR type structured device
overlaid on each. In the latch−up free load line case, the IV
characteristic of the snapback protection device intersects
the load−line in one unique point (V
OP
, I
OP
). This is the only
stable operating point of the circuit and the system is
therefore latch−up free. In the non−latch up free load line
case, the IV characteristic of the snapback protection device
intersects the load−line in two points (V
OPA
, I
OPA
) and
(V
OPB
, I
OPB
). Therefore in this case, the potential for
latch−up exists if the system settles at (V
OPB
, I
OPB
) after a
transient. Because of this, ESD8351 Series should not be
used for HDMI applications – ESD8104 or ESD8040 have
been designed to be acceptable for HDMI applications
without latch−up. Please refer to Application Note
AND9116/D for a more in−depth explanation of latch−up
considerations using ESD8000 series devices.
Figure 7. Example Load Lines for Latch−up Free Applications and Applications with the Potential for Latch−up
ESD8351 Potential Latch*up:
HDMI 1.4/1.3a TMDS
ESD8351 Latch*up free:
USB 2.0 LS/FS, USB 2.0 HS, USB 3.0 SS,
DisplayPort
I
I
SSMAX
I
OPB
I
OPA
V
V
OPB
V
OPA
V
DD
V
OP
V
DD
V
I
I
SSMAX
I
OP
Table 1. SUMMARY OF SCR REQUIREMENTS FOR LATCH−UP FREE APPLICATIONS
Application
VBR (min)
(V)
IH (min)
(mA)
VH (min)
(V)
ON Semiconductor ESD8000 Series
Recommended PN
HDMI 1.4/1.3a TMDS 3.465 54.78 1.0 ESD8104, ESD8040
USB 2.0 LS/FS 3.301 1.76 1.0 ESD8004, ESD8351
USB 2.0 HS 0.482 N/A 1.0 ESD8004, ESD8351
USB 3.0 SS 2.800 N/A 1.0 ESD8004, ESD8006, ESD8351
DisplayPort 3.600 25.00 1.0 ESD8004, ESD8006, ESD8351
ESD8351, SZESD8351
www.onsemi.com
5
IEC 61000−4−2 Spec.
Level
Test Volt-
age (kV)
First Peak
Current
(A)
Current at
30 ns (A)
Current at
60 ns (A)
1 2 7.5 4 2
2 4 15 8 4
3 6 22.5 12 6
4 8 30 16 8
I
peak
90%
10%
IEC61000−4−2 Waveform
100%
I @ 30 ns
I @ 60 ns
t
P
= 0.7 ns to 1 ns
Figure 8. IEC61000−4−2 Spec
Figure 9. Diagram of ESD Clamping Voltage Test Setup
50 W
50 W
Cable
TVS
Oscilloscope
ESD Gun
The following is taken from Application Note
AND8308/D − Interpretation of Datasheet Parameters
for ESD Devices.
ESD Voltage Clamping
For sensitive circuit elements it is important to limit the
voltage that an IC will be exposed to during an ESD event
to as low a voltage as possible. The ESD clamping voltage
is the voltage drop across the ESD protection diode during
an ESD event per the IEC61000−4−2 waveform. Since the
IEC61000−4−2 was written as a pass/fail spec for larger
systems such as cell phones or laptop computers it is not
clearly defined in the spec how to specify a clamping voltage
at the device level. ON Semiconductor has developed a way
to examine the entire voltage waveform across the ESD
protection diode over the time domain of an ESD pulse in the
form of an oscilloscope screenshot, which can be found on
the datasheets for all ESD protection diodes. For more
information on how ON Semiconductor creates these
screenshots and how to interpret them please refer to
AND8307/D.
ESD8351, SZESD8351
www.onsemi.com
6
Transmission Line Pulse (TLP) Measurement
Transmission Line Pulse (TLP) provides current versus
voltage (I−V) curves in which each data point is obtained
from a 100 ns long rectangular pulse from a charged
transmission line. A simplified schematic of a typical TLP
system is shown in Figure 10. TLP I−V curves of ESD
protection devices accurately demonstrate the product’s
ESD capability because the 10s of amps current levels and
under 100 ns time scale match those of an ESD event. This
is illustrated in Figure 11 where an 8 kV IEC 61000−4−2
current waveform is compared with TLP current pulses at
8 A and 16 A. A TLP I−V curve shows the voltage at which
the device turns on as well as how well the device clamps
voltage over a range of current levels.
Figure 10. Simplified Schematic of a Typical TLP
System
DUT
L
S
÷
Oscilloscope
Attenuator
10 MW
V
C
V
M
I
M
50 W Coax
Cable
50 W Coax
Cable
Figure 11. Comparison Between 8 kV IEC 61000−4−2 and 8 A and 16 A TLP Waveforms
ORDERING INFORMATION
Device Package Shipping
ESD8351HT1G,
SZESD8351HT1G*
SOD−323
(Pb−Free)
3000 / Tape & Reel
ESD8351XV2T1G,
SZESD8351XV2T1G*
SOD−523
(Pb−Free)
3000 / Tape & Reel
ESD8351MUT5G X3DFN2
(Pb−Free)
10000 / Tape & Reel
SZESD8351MUT5G* X3DFN2
(Pb−Free)
15000 / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable.

SZESD8351HT1G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
TVS Diodes / ESD Suppressors LOW CAP SNAPBACK ESD PROT
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union