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2N4124

P1-P3P4-P6
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
NPN Silicon
MAXIMUM RATINGS
Rating Symbol 2N4123 2N4124 Unit
Collector–Emitter Voltage V
CEO
30 25 Vdc
Collector–Base Voltage V
CBO
40 30 Vdc
Emitter–Base Voltage V
EBO
5.0 Vdc
Collector Current — Continuous I
C
200 mAdc
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
1.5
12
Watts
mW/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
–55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient R
JA
200 °C/W
Thermal Resistance, Junction to Case R
JC
83.3 °C/W
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(1)
(I
C
= 1.0 mAdc, I
E
= 0) 2N4123
2N4124
V
(BR)CEO
30
25
—
—
Vdc
Collector–Base Breakdown Voltage
(I
C
= 10 Adc, I
E
= 0) 2N4123
2N4124
V
(BR)CBO
40
30
—
—
Vdc
Emitter–Base Breakdown Voltage
(I
E
= 10 Adc, I
C
= 0)
V
(BR)EBO
5.0 — Vdc
Collector Cutoff Current
(V
CB
= 20 Vdc, I
E
= 0)
I
CBO
— 50 nAdc
Emitter Cutoff Current
(V
EB
= 3.0 Vdc, I
C
= 0)
I
EBO
— 50 nAdc
1. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2.0%.
Order this document
by 2N4123/D
SEMICONDUCTOR TECHNICAL DATA
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
1
2
3
Motorola, Inc. 1996
COLLECTOR
3
2
BASE
1
EMITTER
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted) (Continued)
Characteristic
Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain
(1)
(I
C
= 2.0 mAdc, V
CE
= 1.0 Vdc) 2N4123
2N4124
(I
C
= 50 mAdc, V
CE
= 1.0 Vdc) 2N4123
2N4124
h
FE
50
120
25
60
150
360
—
—
—
Collector–Emitter Saturation Voltage
(1)
(I
C
= 50 mAdc, I
B
= 5.0 mAdc)
V
CE(sat)
— 0.3 Vdc
Base–Emitter Saturation Voltage
(1)
(I
C
= 50 mAdc, I
B
= 5.0 mAdc)
V
BE(sat)
— 0.95 Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(I
C
= 10 mAdc, V
CE
= 20 Vdc, f = 100 MHz) 2N4123
2N4124
f
T
250
300
—
—
MHz
Input Capacitance
(V
EB
= 0.5 Vdc, I
C
= 0, f = 1.0 MHz)
C
ibo
— 8.0 pF
Collector–Base Capacitance
(I
E
= 0, V
CB
= 5.0 V, f = 1.0 MHz)
C
cb
— 4.0 pF
Small–Signal Current Gain
(I
C
= 2.0 mAdc, V
CE
= 10 Vdc, R
S
= 10 k ohm, f = 1.0 kHz) 2N4123
2N4124
h
fe
50
120
200
480
—
Current Gain — High Frequency
(I
C
= 10 mAdc, V
CE
= 20 Vdc, f = 100 MHz) 2N4123
2N4124
(I
C
= 2.0 mAdc, V
CE
= 10 V, f = 1.0 kHz) 2N4123
(I
C
= 2.0 mAdc, V
CE
= 10 V, f = 1.0 kHz) 2N4124
|h
fe
|
2.5
3.0
50
120
—
—
200
480
—
Noise Figure
(I
C
= 100 µAdc, V
CE
= 5.0 Vdc, R
S
= 1.0 k ohm, 2N4123
f = 1.0 kHz) 2N4124
NF
—
—
6.0
5.0
dB
1. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2.0%.
Figure 1. Capacitance
REVERSE BIAS VOLTAGE (VOLTS)
2.0
3.0
5.0
7.0
10
1.0
0.1
Figure 2. Switching Times
I
C
, COLLECTOR CURRENT (mA)
200
1.0
TIME (ns)
100
50
30
20
70
10.0
5.0
7.0
2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
CAPACITANCE (pF)
1.0 2.0 3.0 5.0 7.0 10 20
30 40
0.2 0.3 0.5 0.7
C
ibo
C
obo
t
s
t
d
t
r
t
f
V
CC
= 3 V
I
C
/I
B
= 10
V
EB(off)
= 0.5 V
3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Figure 3. Frequency Variations
f, FREQUENCY (kHz)
4
6
8
10
12
2
0.1
Figure 4. Source Resistance
R
S
, SOURCE RESISTANCE (k
Ω
)
0
NF, NOISE FIGURE (dB)
1 2 4 10 20
40
0.2 0.4
0
100
4
6
8
10
12
2
14
0.1 1.0 2.0 4.0 10 20
40
0.2 0.4
100
NF, NOISE FIGURE (dB)
f = 1 kHz
I
C
= 1 mA
I
C
= 0.5 mA
I
C
= 50 A
I
C
= 100 A
SOURCE RESISTANCE = 200
I
C
= 1 mA
SOURCE RESISTANCE = 200
I
C
= 0.5 mA
SOURCE RESISTANCE = 500
I
C
= 100 A
SOURCE RESISTANCE = 1 k
Ω
I
C
= 50 A
AUDIO SMALL–SIGNAL CHARACTERISTICS
NOISE FIGURE
(V
CE
= 5 Vdc, T
A
= 25°C)
Bandwidth = 1.0 Hz
Figure 5. Current Gain
I
C
, COLLECTOR CURRENT (mA)
70
100
200
300
50
Figure 6. Output Admittance
I
C
, COLLECTOR CURRENT (mA)
h , OUTPUT ADMITTANCE ( mhos)
Figure 7. Input Impedance
I
C
, COLLECTOR CURRENT (mA)
Figure 8. Voltage Feedback Ratio
I
C
, COLLECTOR CURRENT (mA)
30
100
50
5
10
20
2.0
3.0
5.0
7.0
10
1.0
0.1 0.2 1.0 2.0
5.0
0.5
10
0.5
0.7
2.0
5.0
10
20
1.0
0.2
0.5
oe
h , VOLTAGE FEEDBACK RATIO (X 10 )
re
h
ie
0.1 0.2 1.0 2.0
5.0 10
0.5
0.1 0.2 1.0 2.0
5.0 10
0.5
2
1
0.1 0.2 1.0 2.0
5.0 10
0.5
–4
h PARAMETERS
(V
CE
= 10 V, f = 1 kHz, T
A
= 25°C)
h
fe
, CURRENT GAIN
, INPUT IMPEDANCE (k )
Ω
P1-P3P4-P6

2N4124

Mfr. #:
Buy 2N4124
Manufacturer:
Central Semiconductor
Description:
Bipolar Transistors - BJT 30Vcbo 25Vceo 5.0Vebo 200mA 625mA
Lifecycle:
New from this manufacturer.
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