2N4124

4
Motorola Small–Signal Transistors, FETs and Diodes Device Data
STATIC CHARACTERISTICS
Figure 9. DC Current Gain
I
C
, COLLECTOR CURRENT (mA)
0.3
0.5
0.7
1.0
2.0
0.2
0.1
h , DC CURRENT GAIN (NORMALIZED)
0.5 2.0 3.0 10 50
70
0.2 0.3
0.1
100
1.00.7
200
30205.0 7.0
FE
V
CE
= 1 V
T
J
= +125
°
C
+25
°
C
55
°
C
Figure 10. Collector Saturation Region
I
B
, BASE CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
0.1
V , COLLECTOR EMITTER VOLTAGE (VOLTS)
0.5 2.0 3.0 100.2 0.3
0
1.00.7 5.0 7.0
CE
I
C
= 1 mA
T
J
= 25
°
C
0.070.050.030.020.01
10 mA 30 mA 100 mA
Figure 11. “On” Voltages
I
C
, COLLECTOR CURRENT (mA)
0.4
0.6
0.8
1.0
1.2
0.2
Figure 12. Temperature Coefficients
I
C
, COLLECTOR CURRENT (mA)
V, VOLTAGE (VOLTS)
1.0 2.0 5.0 10 20
50
0
100
0.5
0
0.5
1.0
0 60 80 120 140 160
180
20 40
100
200
1.0
1.5
2.0
200
T
J
= 25
°
C
V
BE(sat)
@ I
C
/I
B
= 10
V
CE(sat)
@ I
C
/I
B
= 10
V
BE
@ V
CE
= 1 V
+25
°
C to +125
°
C
55
°
C to +25
°
C
+25
°
C to +125
°
C
55
°
C to +25
°
C
VC
for V
CE(sat)
VB
for V
BE(sat)
V
, TEMPERATURE COEFFICIENTS (mV/ C)
°θ
5
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
F
B
K
G
H
SECTION X–X
C
V
D
N
N
X X
SEATING
PLANE
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 0.175 0.205 4.45 5.20
B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
D 0.016 0.022 0.41 0.55
F 0.016 0.019 0.41 0.48
G 0.045 0.055 1.15 1.39
H 0.095 0.105 2.42 2.66
J 0.015 0.020 0.39 0.50
K 0.500 ––– 12.70 –––
L 0.250 ––– 6.35 –––
N 0.080 0.105 2.04 2.66
P ––– 0.100 ––– 2.54
R 0.115 ––– 2.93 –––
V 0.135 ––– 3.43 –––
1
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
CASE 029–04
(TO–226AA)
ISSUE AD
6
Motorola Small–Signal Transistors, FETs and Diodes Device Data
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2N4123/D

2N4124

Mfr. #:
Manufacturer:
Central Semiconductor
Description:
Bipolar Transistors - BJT 30Vcbo 25Vceo 5.0Vebo 200mA 625mA
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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