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VS-GA200SA60UP

P1-P3P4-P6P7-P8
VS-GA200SA60UP
www.vishay.com
Vishay Semiconductors
Revision: 20-May-16
1
Document Number: 94364
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Insulated Gate Bipolar Transistor
(Ultrafast Speed IGBT), 100 A
FEATURES
• Ultrafast: optimized for minimum saturation
voltage and speed up to 30 kHz in hard
switching, > 200 kHz in resonant mode
• Very low conduction and switching losses
• Fully isolate package (2500 V
AC/RMS
)
• Very low internal inductance ( 5 nH typical)
• Industry standard outline
• UL approved file E78996
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
• Lower overall losses available at frequencies = 20 kHz
• Easy to assemble and parallel
• Direct mounting to heatsink
• Lower EMI, requires less snubbing
• Plug-in compatible with other SOT-227 packages
PRODUCT SUMMARY
V
CES
600 V
V
CE(on)
(typical) 1.92 V
V
GE
15 V
I
C
100 A
Speed 8 kHz to 30 kHz
Package SOT-227
Circuit Single switch no diode
SOT-227
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Collector to emitter breakdown voltage V
CES
600 V
Continuous collector current I
C
T
C
= 25 °C 200
A
T
C
= 100 °C 100
Pulsed collector current I
CM
400
Clamped inductive load current I
LM
V
CC
= 80 % (V
CES
), V
GE
= 20 V, L = 10 μH,
R
g
= 2.0 , see fig. 13a
400
Gate to emitter voltage V
GE
± 20 V
Reverse voltage avalanche energy E
ARV
Repetitive rating; pulse width limited by
maximum junction temperature
160 mJ
RMS isolation voltage V
ISOL
Any terminal to case, t = 1 min 2500 V
Maximum power dissipation P
D
T
C
= 25 °C 500
W
T
C
= 100 °C 200
Operating junction and storage temperature range T
J
, T
Stg
-55 to +150 °C
Mounting torque 6-32 or M3 screw 1.3 (12) Nm (lbf.in)
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Junction and storage temperature range T
J
, T
Stg
-55 - 150
°C/WThermal resistance, junction to case R
thJC
- - 0.25
Thermal resistance case to heatsink R
thCS
Flat, greased, surface - 0.05 -
Weight -30 - g
Mounting torque
Torque to terminal - - 1.1 (9.7) Nm (lbf.in)
Torque to heatsink - - 1.3 (11.5) Nm (lbf.in)
Case style SOT-227
VS-GA200SA60UP
www.vishay.com
Vishay Semiconductors
Revision: 20-May-16
2
Document Number: 94364
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown voltage V
(BR)CES
V
GE
= 0 V, I
C
= 250 μA 600 - -
V
Emitter to collector breakdown voltage V
(BR)ECS
V
GE
= 0 V, I
C
= 1.0 A
Pulse width 80 μs; duty factor 0.1 %
18 - -
Temperature coefficient of breakdown
voltage
V
(BR)CES
/T
J
V
GE
= 0 V, I
C
= 10 mA - 0.38 - V/°C
Collector to emitter saturation voltage V
CE(on)
I
C
= 100 A
V
GE
= 15 V
See fig. 2, 5
- 1.60 1.9
V
I
C
= 200 A - 1.92 -
I
C
= 100 A, T
J
= 150 °C - 1.54 -
Gate threshold voltage V
GE(th)
V
CE
= V
GE
, I
C
= 250 μA 3.0 - 6.0
Temperature coefficient of threshold voltage V
GE(th)
/T
J
V
CE
= V
GE
, I
C
= 2.0 mA - -11 - mV/°C
Forward transconductance g
fe
V
CE
= 100 V, I
C
= 100 A
Pulse width 5.0 μs, single shot
79 - - S
Zero gate voltage collector current I
CES
V
GE
= 0 V, V
CE
= 600 V - - 1.0
mA
V
GE
= 0 V, V
CE
= 600 V, T
J
= 150 °C - - 10
Gate to emitter leakage current I
GES
V
GE
= ± 20 V - - ± 250 nA
SWITCHING CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Total gate charge (turn-on) Q
g
I
C
= 100 A
V
CC
= 400 V
V
GE
= 15 V; See fig. 8
- 770 1200
nCGate-emitter charge (turn-on) Q
ge
- 100 150
Gate-collector charge (turn-on) Q
gc
- 260 380
Turn-on delay time t
d(on)
T
J
= 25 °C
I
C
= 100 A
V
CC
= 480 V
V
GE
= 15 V
R
g
= 2.0 
Energy losses include “tail”
See fig. 9, 10, 14
-54-
ns
Rise time t
r
-79-
Turn-off delay time t
d(off)
- 130 200
Fall time t
f
- 300 450
Turn-on switching loss E
on
-0.98-
mJTurn-off switching loss E
off
-3.48-
Total switching loss E
ts
- 4.46 7.6
Turn-on delay time t
d(on)
T
J
= 150 °C
I
C
= 100 A, V
CC
= 480 V
V
GE
= 15 V, R
g
= 2.0 
Energy losses include “tail”
See fig. 10, 11, 14
-56-
ns
Rise time t
r
-75-
Turn-off delay time t
d(off)
- 160 -
Fall time t
f
- 460 -
Total switching loss E
ts
-7.24- mJ
Internal emitter inductance L
E
Measured 5 mm from package - 5.0 - nH
Input capacitance C
ies
V
GE
= 0 V
V
CC
= 30 V
f = 1.0 MHz; See fig. 7
- 16 500 -
pFOutput capacitance C
oes
- 1000 -
Reverse transfer capacitance C
res
- 200 -
VS-GA200SA60UP
www.vishay.com
Vishay Semiconductors
Revision: 20-May-16
3
Document Number: 94364
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I
RMS
of Fundamental)
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Maximum Collector Current vs. Case Temperature
Fig. 5 - Typical Collector to Emitter Voltage vs.
Junction Temperature
0.1
f - Frequency (kHz)
Load Current (A)
1 10 100
For both:
Duty cycle: 50 %
T
J
= 125 °C
T
sink
= 90 °C
Gate drive as specified
Power dissipation = 140 W
Clamp voltage:
80 % of rated
Triangular wave:
I
0
40
80
120
160
200
60 % of rated
voltage
Ideal diodes
I
Square wave:
10
1000
100
0.5 1.0 1.5 2.0 2.5 3.0 3.5
I
C
- Collector to Emitter Current (A)
V
CE
- Collector to Emitter Voltage (V)
T
J
= 150 °C
T
J
= 25 °C
V
GE
= 15 V
20 µs pulse width
10
1000
100
5.0 6.0 7.0 8.0
I
C
- Collector to Emitter Current (A)
V
GE
- Gate to Emitter Voltage (V)
T
J
= 150 °C
T
J
= 25 °C
V
GE
= 25 V
5 µs pulse width
25 50 75 100 125 150
0
50
100
150
200
T
C
- Case Temperature (°C)
Maximum DC Collector Current (A)
1
2
3
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
T
J
- Junction Temperature (°C)
V
CE
- Collector to Emitter Voltage (V)
V
GE
= 15 V
80 µs pulse width
I
C
= 400 A
I
C
= 100 A
I
C
= 200 A
P1-P3P4-P6P7-P8

VS-GA200SA60UP

Mfr. #:
Buy VS-GA200SA60UP
Manufacturer:
Vishay Semiconductors
Description:
IGBT Transistors N-Ch 600 Volt 100A
Lifecycle:
New from this manufacturer.
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