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VS-GA200SA60UP

P1-P3P4-P6P7-P8
VS-GA200SA60UP
www.vishay.com
Vishay Semiconductors
Revision: 20-May-16
4
Document Number: 94364
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction to Case
Fig. 7 - Typical Capacitance vs. Collector to Emitter Voltage
Fig. 8 - Typical Gate Charge vs. Gate to Emitter Voltage
Fig. 9 - Typical Switching Losses vs. Gate Resistance
Fig. 10 - Typical Switching Losses vs. Junction Temperature
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Response
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
Single pulse
(thermal resistance)
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
1 10 100
0
V
CE
- Collector to Emitter Voltage (V)
C - Capacitance (pF)
5000
10 000
15 000
20 000
25 000
30 000
V
GE
= 0 V, f = 1 MHz
C
ies
= C
ge
+ C
gc
, C
ce
shorted
C
res
= C
gc
C
oes
= C
ce
+ C
gc
C
ies
C
oes
C
res
0 200 400 600 800
0
4
8
12
16
20
Q
G
- Total Gate Charge (nC)
V
GE
- Gate to Emitter Voltage (V)
V
CC
= 400 V
I
C
= 110 A
0 102030405060
R
G
- Gate Resistance (Ω)
Total Switching Losses (mJ)
0
10
20
30
40
50
60
V
CC
= 480 V
V
GE
= 15 V
T
J
= 25 °C
I
C
= 200 A
Total Switching Losses (mJ)
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
1
10
100
T
J
- Junction Temperature (°C)
I
C
= 200 A
I
C
= 100 A
I
C
= 350 A
R
G
= 2.0 Ω
V
GE
= 15 V
V
CC
= 480 V
VS-GA200SA60UP
www.vishay.com
Vishay Semiconductors
Revision: 20-May-16
5
Document Number: 94364
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 11 - Typical Switching Losses vs. Collector Current
Fig. 12 - Turn-Off SOA
Fig. 13a - Clamped Inductive Load Test Circuit
Fig. 13b - Pulsed Collector Current Test Circuit
Fig. 14a - Switching Loss Test Circuit
Fig. 14b - Switching Loss Waveforms
Total Switching Losses (mJ)
I
C
- Collector Current (A)
0 100 200 300 400
0
10
20
30
40
50
60
R
G
= 2.0 Ω
T
J
= 150 °C
V
CC
= 480 V
V
GE
= 15 V
I
C
- Collector Current (A)
10
100
1000
1 10 100 1000
V
CE
- Collector to Emitter Voltage (V)
Safe operating area
V
GE
= 20 V
T
J
= 125 °C
D.U.T.
50 V
L
V
C
*
* Driver same type as D.U.T.; V
C
= 80 % of V
CE
(max)
Note: Due to the 50 V power supply, pulse width and inductor
will increase to obtain rated I
d
1000 V
1
2
1
2
480 V
4 x I
C
at 25 °C
480 µF
960 V
0 V to 480 V
R
L
==
50 V
Driver*
1000 V
D.U.T.
I
C
V
C
L
* Driver same type
as D.U.T., V
C
= 480 V
3
1
2
VS-GA200SA60UP
www.vishay.com
Vishay Semiconductors
Revision: 20-May-16
6
Document Number: 94364
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ORDERING INFORMATION TABLE
CIRCUIT CONFIGURATION
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95425
Packaging information www.vishay.com/doc?95423
1
- Insulated Gate Bipolar Transistor (IGBT)
- Vishay Semiconductors product
2
- Generation 4, IGBT silicon, DBC construction
3
- Current rating (200 = 200 A)
4
- Single switch, no diode
5
- SOT-227
6
- Voltage rating (60 = 600 V)
8
9
- None = standard production
P = lead (Pb)-free
7
- Speed/type (U = ultrafast)
Device code
51 32 4 6 7 8 9
GVS- A 200 S A 60 U P
3 (C)
2 (G)
1, 4 (E)
Lead assignment
E
C
G
E
3
2
4
1
n-channel
P1-P3P4-P6P7-P8

VS-GA200SA60UP

Mfr. #:
Buy VS-GA200SA60UP
Manufacturer:
Vishay Semiconductors
Description:
IGBT Transistors N-Ch 600 Volt 100A
Lifecycle:
New from this manufacturer.
Delivery:
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