4N37 Datasheet 4N37, 4N27, 4N37S | P1-P3

5/7/03

WHITE PACKAGE (-M SUFFIX)

Page 1 of 15

GENERAL PURPOSE 6-PIN

PHOTOTRANSISTOR OPTOCOUPLERS

BLACK PACKAGE (NO -M SUFFIX)

6

1

6

1

6

1

6

1

6

1

4N25 4N26 4N27 4N28 4N35 4N36

4N37 H11A1 H11A2 H11A3 H11A4 H11A5

DESCRIPTION

The general purpose optocouplers consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin

dual in-line package.

FEATURES

• Also available in white package by specifying -M sufﬁx, eg. 4N25-M

• UL recognized (File # E90700)

• VDE recognized (File # 94766)

- Add option V for white package (e.g., 4N25V-M)

- Add option 300 for black package (e.g., 4N25.300)

APPLICATIONS

• Power supply regulators

• Digital logic inputs

• Microprocessor inputs

SCHEMATIC

PIN 1. ANODE

2. CATHODE

3. NO CONNECTION

4. EMITTER

5. COLLECTOR

6. BASE

2

1

3NC

5

6

4

5/7/03

4N25 4N26 4N27 4N28 4N35 4N36

4N37 H11A1 H11A2 H11A3 H11A4 H11A5

GENERAL PURPOSE 6-PIN

PHOTOTRANSISTOR OPTOCOUPLERS

Page 2 of 15

ABSOLUTE MAXIMUM RATINGS

(T

A

= 25°C unless otherwise speciﬁed)

Parameter Symbol Value Units

TOTAL DEVICE

Storage Temperature

T

STG

-55 to +150 °C

Operating Temperature

T

OPR

-55 to +100 °C

Wave solder temperature (see page 14 for reﬂow solder proﬁles)

T

SOL

260 for 10 sec °C

Total Device Power Dissipation @ T

A

= 25°C

Derate above 25°C

P

D

250

mW

3.3 (non-M), 2.94 (-M)

EMITTER

DC/Average Forward Input Current

I

F

100 (non-M), 60 (-M) mA

Reverse Input Voltage

V

R

6V

Forward Current - Peak (300µs, 2% Duty Cycle)

I

F

(pk)

3A

LED Power Dissipation @ T

A

= 25°C

Derate above 25°C

P

D

150 (non-M), 120 (-M) mW

2.0 (non-M), 1.41 (-M) mW/°C

DETECTOR

Collector-Emitter Voltage

V

CEO

30 V

Collector-Base Voltage

V

CBO

70 V

Emitter-Collector Voltage

V

ECO

7V

Detector Power Dissipation @ T

A

= 25°C

Derate above 25°C

P

D

150 mW

2.0 (non-M), 1.76 (-M) mW/°C

5/7/03

Page 3 of 15

GENERAL PURPOSE 6-PIN

PHOTOTRANSISTOR OPTOCOUPLERS

4N25 4N26 4N27 4N28 4N35 4N36

4N37 H11A1 H11A2 H11A3 H11A4 H11A5

Note

* Typical values at T

A

= 25°C

ELECTRICAL CHARACTERISTICS

(T

A

= 25°C unless otherwise speciﬁed)

INDIVIDUAL COMPONENT CHARACTERISTICS

Parameter Test Conditions Symbol Min Typ* Max Unit

EMITTER

Input Forward Voltage (I

F

= 10 mA) V

F

1.18 1.50 V

Reverse Leakage Current (V

R

= 6.0 V) I

R

0.001 10 µA

DETECTOR

Collector-Emitter Breakdown Voltage (I

C

= 1.0 mA, I

F

= 0) BV

CEO

30 100 V

Collector-Base Breakdown Voltage (I

C

= 100 µA, I

F

= 0) BV

CBO

70 120 V

Emitter-Collector Breakdown Voltage (I

E

= 100 µA, I

F

= 0) BV

ECO

710 V

Collector-Emitter Dark Current (V

CE

= 10 V, I

F

= 0) I

CEO

1 50 nA

Collector-Base Dark Current (V

CB

= 10 V) I

CBO

20 nA

Capacitance (V

CE

= 0 V, f = 1 MHz) C

CE

8pF

ISOLATION CHARACTERISTICS

Characteristic Test Conditions Symbol Min Typ* Max Units

Input-Output Isolation Voltage

(Non ‘-M’, Black Package) (f = 60 Hz, t = 1 min)

V

ISO

5300 Vac(rms)

(‘-M’, White Package) (f = 60 Hz, t = 1 sec) 7500 Vac(pk)

Isolation Resistance (V

I-O

= 500 VDC) R

ISO

10

11

Ω

Isolation Capacitance

(V

I-O

= &, f = 1 MHz)

C

ISO

0.5 pF

(‘-M’ White Package) 0.2 2 pF

4N37

4N37

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